IRLR8256TRPBF

PD - 96208 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant IRLR8256PbF IRLU8256PbF HEXFET® Power MOSFET VDSS 25V RDS(on) max 5.7m: Qg 10nC D S G S D G D-Pak I-Pak IRLR8256PbF IRLU8256PbF G Gate D Drain S Source Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 25 ± 20 81 57 Units V ™ f f A Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range g g 325 63 31 0.42 -55 to + 175 300 (1.6mm from case) W W/°C °C Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case h Typ. Max. 2.4 50 110 Units °C/W Junction-to-Ambient (PCB Mount) Junction-to-Ambient gà ––– ––– ––– ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through † are on page 11 www.irf.com 1 12/19/08 IRLR/U8256PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Min. Typ. Max. Units 25 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 81 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 18 4.2 6.7 1.8 -7.2 ––– ––– ––– ––– ––– 10 2.3 1.6 3.6 2.6 5.1 9.0 2.5 9.7 46 12 8.5 1470 453 185 ––– ––– 5.7 8.5 Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A 2.35 V VDS = VGS, ID = 25µA ––– mV/°C 1.0 150 100 -100 ––– 15 ––– ––– ––– ––– ––– ––– 3.9 ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– pF nC Ω µA nA S e e VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 13V, ID = 20A VDS = 13V VGS = 4.5V ID = 20A See Fig. 16 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V nC ns ID = 20A e RG = 1.8Ω See Fig. 14 VGS = 0V VDS = 13V ƒ = 1.0MHz Max. 86 20 6.3 Units mJ A mJ Avalanche Characteristics Ù d ™ ––– ––– ––– ––– ––– ––– ––– ––– 19 17 Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units 81 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 13V di/dt = 300A/µs f A Ù 325 1.0 29 26 V ns nC e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRLR/U8256PbF 1000 TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 1000 TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.5V 1 2.5V 0.1 0.1 ≤60µs PULSE WIDTHj = 25°C T 1 10 100 ≤60µs PULSE WIDTH 1 0.1 1 Tj = 175°C 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 100 T J = 175°C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 25A VGS = 10V 1.5 1.0 1 T J = 25°C VDS = 15V ≤60µs PULSE WIDTH 0.1 1 2 3 4 5 6 7 8 0.5 -60 -40 -20 0 20 40 60 80 100 120140 160180 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRLR/U8256PbF 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 5.0 ID= 20A VGS, Gate-to-Source Voltage (V) 4.0 VDS= 20V VDS= 13V C, Capacitance (pF) Ciss 1000 Coss 3.0 2.0 Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 1.0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 100 1msec 10msec 10 Tc = 25°C Tj = 175°C Single Pulse 1 0 1 10 100 VDS, Drain-to-Source Voltage (V) ISD, Reverse Drain Current (A) 100 TJ = 175°C 10 T J = 25°C 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) ID, Drain-to-Source Current (A) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR/U8256PbF 90 VGS(th), Gate threshold Voltage (V) 2.5 Limited By Package 80 70 ID, Drain Current (A) 2.0 60 50 40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.5 ID = 25µA 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 10 Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 0.1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ4 Ri (°C/W) 0.04252 τ τi (sec) 0.000007 0.000109 0.001003 0.57953 1.17480 0.60472 τ1 τ2 τ3 τ4 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τ i/Ri Ci i/Ri 0.005976 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U8256PbF 15V 400 EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 350 300 250 200 150 100 50 0 25 50 75 100 ID TOP 5.57A 8.50A BOTTOM 20A RG 20V VGS D.U.T IAS tp + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS RD Fig 12b. Unclamped Inductive Waveforms V GS RG Current Regulator Same Type as D.U.T. V DS D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 50KΩ 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS VDS 90% VGS 3mA IG ID Current Sampling Resistors 10% VGS td(on) tr t d(off) tf Fig 13. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms 6 www.irf.com IRLR/U8256PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform www.irf.com 7 IRLR/U8256PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAS XDUCÃ6TT@H7G` GPUÃ8P9@à !"# %Ã! ! Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G@9ÃPIÃXXà DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å ,5)5 $   96U@Ã8P9@ `@6Sà X@@Fà GDI@Ã6 Ã2Ã! % I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ 6TT@H7G` GPUÃ8P9@ ÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚Ãvqvph‡r† ÅGrhqA…rrÅĈhyvsvph‡v‚Ã‡‚ÇurÃp‚†ˆ€r…yr‰ry 25 Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃRV6GDAD@9ÃUPÃUC@ 8PITVH@SÃG@W@GÃPQUDPI6G `@6Sà X@@Fà Ã2Ã! % ,5)5   6TT@H7G` GPUÃ8P9@ 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRLR/U8256PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAV ! XDUCÃ6TT@H7G` GPUÃ8P9@Ã$%&' 6TT@H7G@9ÃPIÃXXà (Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)8 $   96U@Ã8P9@ `@6Sà Ã2Ã! X@@Fà ( GDI@Ã6 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)8   96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6Sà Ã2Ã! X@@Fà ( 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRLR/U8256PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRLR/U8256PbF Orderable part number IRLR8256PBF IRLR8256TRPBF IRLR8256PBF Qualification Information† Qualification level Industrial †† ††† Package Type D-PAK D-PAK I-PAK Standard Pack Form Quantity Tube/Bulk 75 Tape and Reel 2000 Tube/Bulk 75 Note (per JEDEC JESD47F guidelines) Comments: This family of products has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. Moisture Sensitivity Level D-PAK I-PAK RoHS Compliant Yes MSL1 (per JEDEC J-STD-020D†††) Not applicable † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 20A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. … When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. † Rθ is measured at TJ approximately 90°C. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-790 Visit us at www.irf.com for sales contact information.12/2008 www.irf.com 11