IRLR8711CPBF

PD - 97238A IRLR8711CPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free G HEXFET® Power MOSFET VDSS 25V RDS(on) max 5.6m: D Qg 13nC G D S D-Pak IRLR8711CPbF D S Gate Drain Source Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Max. 25 ± 20 84 60 Units V ™ f f A W W/°C °C g g 340 68 34 0.45 -55 to + 175 Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient h Typ. Max. 2.2 50 110 Units °C/W h ghà ––– ––– ––– Notes  through † are on page 10 www.irf.com 1 09/22/06 IRLR8711CPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Min. Typ. Max. Units 25 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 86 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 16 4.5 6.2 1.8 -6.3 ––– ––– ––– ––– ––– 13 3.0 1.9 4.3 3.8 6.2 6.4 1.5 9.7 29 10 4.4 1640 430 210 ––– ––– 5.6 7.8 2.35 ––– 1.0 150 100 -100 ––– 20 ––– ––– ––– ––– ––– ––– 3.4 ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– pF VGS = 0V VDS = 13V ns nC Ω nC VDS = 13V VGS = 4.5V ID = 17A See Fig.16 S nA V mV/°C µA V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 21A VGS = 4.5V, ID = 17A VDS = VGS, ID = 50µA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 13V, ID = 17A e e VDS = 10V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 17A e Clamped Inductive Load ƒ = 1.0MHz Max. 47 17 6.8 Units mJ A mJ Avalanche Characteristics EAS IAR EAR Ù d ™ ––– ––– ––– ––– ––– ––– ––– ––– 13 8.0 Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units 84 f Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 17A, VGS = 0V TJ = 25°C, IF = 17A, VDD = 13V di/dt = 300A/µs A 340 1.0 20 12 V ns nC Ù e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRLR8711CPbF 1000 TOP VGS 10V 5.0V 4.5V 3.7V 3.5V 3.0V 2.7V 2.5V 1000 TOP VGS 10V 5.0V 4.5V 3.7V 3.5V 3.0V 2.7V 2.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.5V 1 2.5V 0.1 0.1 1 ≤60µs PULSE WIDTH Tj = 25°C 10 1 100 1000 0.1 1 ≤60µs PULSE WIDTH Tj = 175°C 10 100 1000 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 42A VGS = 10V 100 T J = 175°C 1.5 10 1.0 1 T J = 25°C VDS = 15V ≤60µs PULSE WIDTH 0.1 1 2 3 4 5 6 7 8 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRLR8711CPbF 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd 5.0 ID= 17A VGS, Gate-to-Source Voltage (V) 4.0 VDS= 20V VDS= 13V C, Capacitance (pF) VDS= 5.0V 3.0 Ciss 1000 Coss 2.0 Crss 1.0 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0.0 0 2 4 6 8 10 12 14 16 18 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100µsec 10 T J = 25°C 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 1msec 10msec VGS = 0V 1.0 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR8711CPbF 90 Limited By Package VGS(th) , Gate Threshold Voltage (V) 2.5 80 70 ID, Drain Current (A) 2.0 60 50 40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.5 ID = 50µA 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 10 Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.1 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.0623 0.4903 1.1779 0.4716 τi (sec) 0.000006 0.000029 0.000455 0.001642 τ1 τ2 τ3 τ4 0.01 Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 0.001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR8711CPbF RDS(on) , Drain-to -Source On Resistance ( mΩ) 25 ID = 21A 20 200 EAS , Single Pulse Avalanche Energy (mJ) 180 160 140 120 100 80 60 40 20 0 25 50 75 100 ID TOP 5.7A 7.9A BOTTOM 17A 15 10 T J = 125°C 5 T J = 25°C 0 2 4 6 8 10 12 125 150 175 VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 14a. Unclamped Inductive Test Circuit LD VDS Fig 14b. Unclamped Inductive Waveforms + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 90% VDS 10% VGS td(on) tr td(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms 6 www.irf.com IRLR8711CPbF Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRLR8711CPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAS XDUCÃ6TT@H7G` GPUÃ8P9@à !"# %Ã! ! Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G@9ÃPIÃXXà DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å ,5)5 $   96U@Ã8P9@ `@6Sà X@@Fà GDI@Ã6 Ã2Ã! % I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ 6TT@H7G` GPUÃ8P9@ ÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚Ãvqvph‡r† ÅGrhqA…rrÅĈhyvsvph‡v‚Ã‡‚ÇurÃp‚†ˆ€r…yr‰ry Q6SUÃIVH7@S 25 DIU@SI6UDPI6G S@8UDAD@S GPBP ,5)5   96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃRV6GDAD@9ÃUPÃUC@ 8PITVH@SÃG@W@GÃPQUDPI6G `@6Sà X@@Fà Ã2Ã! % 6TT@H7G` GPUÃ8P9@ 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ 8 www.irf.com IRLR8711CPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A. max. junction temperature. ‚ Starting TJ = 25°C, L = 0.34mH, RG = 25Ω, IAS = 17A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. … When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. † Rθ is measured at TJ approximately at 90°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/06 www.irf.com 9