IRLR8713PBF

PD - 97067 IRLR8713PbF IRLU8713PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free G HEXFET® Power MOSFET VDSS 25V D RDS(on) max 4.8m: D Qg 17.4nC G D S G D S D-Pak IRLR8713PbF I-Pak IRLU8713PbF D S Gate Drain Max. 25 ± 20 100 72 Source Units V Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ™ f f A W W/°C °C Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range g g 410 81 40 0.54 -55 to + 175 300 (1.6mm from case) Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case h Typ. Max. 1.86 50 110 Units °C/W Junction-to-Ambient (PCB Mount) Junction-to-Ambient h ghà ––– ––– ––– Notes  through † are on page 10 www.irf.com 1 12/7/05 IRLR/U8713PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆Β VDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 25 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 79 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 16 3.8 5.0 1.85 -7.0 ––– ––– ––– ––– ––– 17.4 4.0 2.2 5.8 5.4 8.0 8.6 0.9 14 24 12 5.9 2240 580 270 ––– V Conditions VGS = 0V, ID = 250µA ––– mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 21A 4.8 6.3 2.35 1.0 150 100 -100 ––– 26 ––– ––– ––– ––– ––– ––– 1.6 ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 13V ƒ = 1.0MHz ns nC Ω ID = 17A Clamped Inductive Load VDS = 10V, VGS = 0V VDD = 13V, VGS = 4.5V nC VDS = 13V VGS = 4.5V ID = 17A See Fig.16 S nA V µA ––– mV/°C VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 13V, ID = 17A VGS = 4.5V, ID = 17A e e VDS = VGS, ID = 50µA e Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Typ. ––– ––– ––– Max. 190 17 8.1 Units mJ A mJ Repetitive Avalanche Energy ™ ––– ––– ––– ––– ––– ––– ––– ––– 16 15 Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units 100 f Conditions MOSFET symbol showing the integral reverse D A 410 1.0 24 23 V ns nC G S Ù p-n junction diode. TJ = 25°C, IS = 17A, VGS = 0V TJ = 25°C, IF = 17A, VDD = 13V di/dt = 300A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRLR/U8713PbF 1000 TOP VGS 10V 5.0V 4.5V 3.7V 3.5V 3.0V 2.7V 2.5V 1000 TOP VGS 10V 5.0V 4.5V 3.7V 3.5V 3.0V 2.7V 2.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 1 2.5V ≤ 60µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 100 2.5V 0.1 0.1 1 ≤ 60µs PULSE WIDTH Tj = 25°C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 100 TJ = 175°C RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 42A VGS = 10V 1.5 10 TJ = 25°C 1 1.0 VDS = 15V 0.1 1.0 2.0 3.0 ≤ 60µs PULSE WIDTH 4.0 5.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR/U8713PbF 10000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID= 17A 10 8 6 4 2 0 VDS = 21V VDS= 13V C, Capacitance (pF) Ciss 1000 Coss Crss 100 1 10 100 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) 100 TJ = 175°C 1000 100µsec 1msec 100 10 TJ = 25°C 1 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 100 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 0.1 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR/U8713PbF 100 2.4 80 ID , Drain Current (A) VGS(th) Gate threshold Voltage (V) LIMITED BY PACKAGE 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 60 ID = 50µA 40 20 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) TJ, Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Threshold Voltage Vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 τJ τJ τ1 τ1 R1 R1 τ2 R2 R2 R3 R3 τC τ3 τ Ri (°C/W) τι (sec) τ2 τ3 0.01 Ci= τi/Ri Ci= τi/Ri 0.382809 0.000148 0.927748 0.0013 0.550944 0.009343 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U8713PbF m RDS (on), Drain-to -Source On Resistance ( Ω) 16 800 ID = 21A 12 EAS, Single Pulse Avalanche Energy (mJ) 600 ID 7.1A 9.2A BOTTOM 17A TOP 8 TJ = 125°C 400 4 TJ = 25°C 0 2.0 4.0 6.0 8.0 10.0 200 0 25 50 75 100 125 150 175 VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 14a. Unclamped Inductive Test Circuit LD VDS Fig 14b. Unclamped Inductive Waveforms + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 90% VDS 10% VGS td(on) tr td(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms 6 www.irf.com IRLR/U8713PbF Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRLR/U8713PbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" N ote: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFR120 916A 12 34 DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INT ERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFR120 12 P916A 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE 8 www.irf.com IRLR/U8713PbF I-Pak (TO-251AA) Package Outline I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFU120 919A 56 78 DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFU120 56 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE www.irf.com 9 IRLR/U8713PbF Dimensions are shown in millimeters (inches) TR D-Pak (TO-252AA) Tape & Reel Information TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A. max. junction temperature. ‚ Starting TJ = 25°C, L = 0.77mH, RG = 25Ω, IAS = 17A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. … When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. † Rθ is measured at TJ approximately at 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/05 10 www.irf.com