IRLR8726TRPBF

PD - 97146A IRLR8726PbF IRLU8726PbF HEXFET® Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg (typ.) Converters for Computer Processor Power 30V 5.8m @VGS = 10V 15nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D D for Telecom and Industrial Use : Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant G D S G D S D-Pak IRLR8726PbF G D I-Pak IRLU8726PbF S Gate Drain Max. 30 ± 20 86 61 Source Units V Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ™ f f A W W/°C °C Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range h h 340 75 38 0.5 -55 to + 175 300 (1.6mm from case) Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case h Typ. Max. 2.0 50 110 Units °C/W Junction-to-Ambient (PCB Mount) Junction-to-Ambient h ghà ––– ––– ––– Notes  through † are on page 11 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 11/23/09 IRLR/U8726PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 73 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 20 4.0 5.8 1.80 -8.6 ––– ––– ––– ––– ––– 15 3.7 1.9 5.7 3.7 7.6 10 2.0 12 49 15 16 2150 480 205 ––– ––– 5.8 8.0 2.35 ––– 1.0 150 100 -100 ––– 23 ––– ––– ––– ––– ––– ––– 3.5 ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– pF ns nC Ω ID = 20A RG = 1.8Ω nC VDS = 15V VGS = 4.5V ID = 20A S nA V mV/°C µA V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A e e VDS = VGS, ID = 50µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 20A See Fig. 15 VDS = 15V, VGS = 0V VDD = 15V, VGS = 4.5V e See Fig. 13 VGS = 0V VDS = 15V ƒ = 1.0MHz Max. 120 20 Units mJ A Avalanche Characteristics EAS IAR Ù d Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 24 52 86 f Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/µs A 340 1.0 36 78 V ns nC Ù e 2 e www.irf.com IRLR/U8726PbF 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.7V 2.5V TOP 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.7V 2.5V 10 10 1 ≤ 60µs PULSE WIDTH Tj = 25°C 2.5V 2.5V ≤ 60µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 100 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 25A VGS = 10V 1.5 100 10 TJ = 175°C TJ = 25°C 1 1.0 VDS = 15V 0.1 0.0 2.0 4.0 ≤ 60µs PULSE WIDTH 6.0 8.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRLR/U8726PbF 10000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 10 8 6 4 2 0 ID= 20A VDS= 24V VDS= 15V C, Capacitance (pF) Ciss 1000 Coss Crss 100 1 10 100 0 4 8 12 16 20 24 28 32 36 40 VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 10000 TJ = 175°C ISD , Reverse Drain Current (A) ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100µsec 1msec 10msec 100 100 10 TJ = 25°C 10 1 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 TC= 25°C TJ = 175°C Single Pulse 0.1 0.1 1 10 100 VSD , Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR/U8726PbF 100 LIMITED BY PACKAGE VGS(th) Gate threshold Voltage (V) 2.5 ID = 500µA ID = 50µA 2.0 80 ID , Drain Current (A) ID = 25µA 60 1.5 40 20 1.0 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 10 Thermal Response ( ZthJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 τ1 τ2 τ3 τ4 0.01 Ci= τi/Ri Ci i/Ri Ri (°C/W) τι (sec) 0.014297 0.000003 0.373312 0.00009 1.010326 0.000973 0.602065 0.007272 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U8726PbF EAS, Single Pulse Avalanche Energy (mJ) 500 400 ID 5.6A 8.2A BOTTOM 20A TOP 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS 15V tp DRIVER VDS L RG 20V VGS D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 12b. Unclamped Inductive Test Circuit V DS VGS RG V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 12c. Unclamped Inductive Waveforms VDS 90% RD D.U.T. + -VDD 10% VGS td(on) tr t d(off) tf Fig 13a. Switching Time Test Circuit Fig 13b. Switching Time Waveforms 6 www.irf.com IRLR/U8726PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG * • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD ** + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 14. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs Id Vds Vgs L 0 DUT 20K 1K S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www.irf.com 7 IRLR/U8726PbF Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAS XDUCÃ6TT@H7G` GPUÃ8P9@à !"# %Ã! ! Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G@9ÃPIÃXXà DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å ,5)5 $   96U@Ã8P9@ `@6Sà X@@Fà GDI@Ã6 Ã2Ã! % I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ 6TT@H7G` GPUÃ8P9@ ÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚Ãvqvph‡r† ÅGrhqA…rrÅĈhyvsvph‡v‚Ã‡‚ÇurÃp‚†ˆ€r…yr‰ry 25 Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃRV6GDAD@9ÃUPÃUC@ 8PITVH@SÃG@W@GÃPQUDPI6G `@6Sà X@@Fà Ã2Ã! % ,5)5   6TT@H7G` GPUÃ8P9@ 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRLR/U8726PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAV ! XDUCÃ6TT@H7G` GPUÃ8P9@Ã$%&' 6TT@H7G@9ÃPIÃXXà (Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)8 $   96U@Ã8P9@ `@6Sà Ã2Ã! X@@Fà ( GDI@Ã6 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)8   96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6Sà Ã2Ã! X@@Fà ( 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRLR/U8726PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRLR/U8726PbF Orderable part number Package Type IRLR8726PBF IRLR8726TRPBF IRLU8726PBF D-PAK D-PAK I-PAK Standard Pack Form Quantity Tube/Bulk 75 Tape and Reel 2000 Tube/Bulk 75 Note Qualification information† D-PAK Qualification level Moisture Sensitivity Level RoHS compliant I-PAK Qualification level Moisture Sensitivity Level RoHS compliant Industrial Not applicable Yes Consumer†† MS L1 (per JEDE C J-S T D-020D Yes ††† ) † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.605mH, RG = 25Ω, IAS = 20A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. … When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques refer to application note #AN-994. † Rθ is measured at TJ approximately at 90°C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2009 www.irf.com 11