IRLR8729PBF

PD - 97352A IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant HEXFET® Power MOSFET VDSS 30V RDS(on) max 8.9mΩ D Qg 10nC S G S D G D-Pak I-Pak IRLR8729PbF IRLU8729PbF G Gate D Drain S Source Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Max. 30 ± 20 58 41 Units V ™ f f A W W/°C °C g g 260 55 27 0.37 -55 to + 175 Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ. Max. 2.73 50 110 Units °C/W gà ––– ––– ––– ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through … are on page 11 www.irf.com 1 12/16/08 IRLR/U8729PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Min. Typ. Max. Units 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 91 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 21 6.0 8.9 1.8 -6.2 ––– ––– ––– ––– ––– 10 2.1 1.3 4.0 2.6 4.8 6.3 1.6 10 47 11 10 1350 280 120 ––– ––– 8.9 11.9 2.35 ––– 1.0 150 100 -100 ––– 16 ––– ––– ––– ––– ––– ––– 2.7 ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– pF nC Ω nC VDS = 15V VGS = 4.5V ID = 20A V Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A mV/°C Reference to 25°C, ID = 1mA mΩ V mV/°C µA nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 20A VDS = VGS, ID = 25µA e e See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns ID = 20A RG = 1.8Ω See Fig. 14 VGS = 0V VDS = 15V ƒ = 1.0MHz Max. 74 20 5.5 Units mJ A mJ e Avalanche Characteristics Ù d ™ ––– ––– ––– ––– ––– ––– ––– ––– 16 19 Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units 58 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/µs f A Ù 260 1.0 24 29 V ns nC e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRLR/U8729PbF 1000 TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 1000 TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.5V 1 1 ≤60µs PULSE WIDTH 2.5V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Tj = 25°C ≤60µs PULSE WIDTH Tj = 175°C 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 25A VGS = 10V 100 T J = 175°C 10 1.5 1.0 1 T J = 25°C VDS = 15V ≤60µs PULSE WIDTH 1 2 3 4 5 6 7 8 0.1 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRLR/U8729PbF 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED 5.0 ID= 20A VGS, Gate-to-Source Voltage (V) Crss = C gd Coss = Cds + Cgd 4.0 VDS= 24V VDS= 15V C, Capacitance (pF) Ciss 1000 Coss 3.0 2.0 1.0 Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0.0 0 2 4 6 8 10 12 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 100 1msec 100 T J = 175°C 10 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1 T J = 25°C 10 Tc = 25°C Tj = 175°C Single Pulse 1 0 10msec VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR/U8729PbF 60 Limited By Package 50 ID, Drain Current (A) 2.5 VGS(th) , Gate threshold Voltage (V) 2.0 40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.5 ID = 25µA ID = 50µA ID = 100µA 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 10 Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 0.1 R1 R1 τ2 R2 R2 τC τC Ri (°C/W) τi (sec) 1.251 0.000513 1.481 0.004337 τ1 τ2 0.01 SINGLE PULSE ( THERMAL RESPONSE ) C i= τi /R i Ci = τ i/ Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U8729PbF EAS , Single Pulse Avalanche Energy (mJ) 15V 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) ID 4.4A 6.5A BOTTOM 20A TOP VDS L DRIVER RG 20V D.U.T IAS tp + V - DD A 0.01Ω VGS Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS RD Fig 12b. Unclamped Inductive Waveforms RG Current Regulator Same Type as D.U.T. V DS VGS D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 50KΩ 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS VDS 90% VGS 3mA IG ID 10% VGS td(on) tr t d(off) tf Current Sampling Resistors Fig 13. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms 6 www.irf.com IRLR/U8729PbF Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V D.U.T ƒ + - - ‚ Circuit Layout Considerations D.U.T. ISD Waveform • Low Stray Inductance • Ground Plane Reverse • Low Leakage Inductance Recovery Body Diode Forward Current Transformer + Current Current di/dt * „ • • • • dv/dt controlled by RG DD Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Re-Applied V Voltage + D.U.T. VDS Waveform Diode Recovery dv/dt  RG VDD Body Diode Forward Drop - Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform www.irf.com 7 IRLR/U8729PbF Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAS XDUCÃ6TT@H7G` GPUÃ8P9@à !"# %Ã! ! Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G@9ÃPIÃXXà DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å ,5)5 $   96U@Ã8P9@ `@6Sà X@@Fà GDI@Ã6 Ã2Ã! % I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ 6TT@H7G` GPUÃ8P9@ ÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚Ãvqvph‡r† ÅGrhqA…rrÅĈhyvsvph‡v‚Ã‡‚ÇurÃp‚†ˆ€r…yr‰ry 25 Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃRV6GDAD@9ÃUPÃUC@ 8PITVH@SÃG@W@GÃPQUDPI6G `@6Sà X@@Fà Ã2Ã! % ,5)5   6TT@H7G` GPUÃ8P9@ 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRLR/U8729PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAV ! XDUCÃ6TT@H7G` GPUÃ8P9@Ã$%&' 6TT@H7G@9ÃPIÃXXà (Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)8 $   96U@Ã8P9@ `@6Sà Ã2Ã! X@@Fà ( GDI@Ã6 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)8   96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `@6Sà Ã2Ã! X@@Fà ( 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRLR/U8729PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRLR/U8729PbF Orderable part number IRLR8729PBF IRLR8729TRPBF IRLU8729PBF Qualification information† Qualification level Package Type D-PAK D-PAK I-PAK Standard Pack Form Quantity Tube/Bulk 75 Tape and 2000 Reel Tube/Bulk 75 Note Moisture Sensitivity Level Industrial†† (per JEDEC JESD47F††† guidelines) Comments: This family of products has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. D-PAK MS L1 (per JE DE C J-S T D-020D†††) Not applicable Yes I-PAK RoHS compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 20A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. … When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/08 www.irf.com 11