IRLU024N

PD- 91363E IRLR024N IRLU024N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.065Ω ID = 17A Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak I-Pak IRLR024N IRLU024N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 17 12 72 45 0.3 ± 16 68 11 4.5 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Case-to-Ambient (PCB mount)** Junction-to-Ambient Typ. ––– ––– ––– Max. 3.3 50 110 Units °C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 2/10/00 IRLR/U024N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. Typ. Max. Units Conditions 55 ––– ––– V V GS = 0V, ID = 250µA ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.065 VGS = 10V, ID = 10A „ ––– ––– 0.080 Ω VGS = 5.0V, ID = 10A „ ––– ––– 0.110 VGS = 4.0V, ID = 9.0A „ 1.0 ––– 2.0 V VDS = VGS, ID = 250µA 8.3 ––– ––– S VDS = 25V, ID = 11A ––– ––– 25 VDS = 55V, VGS = 0V µA ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 16V nA ––– ––– -100 VGS = -16V ––– ––– 15 ID = 11A ––– ––– 3.7 nC VDS = 44V ––– ––– 8.5 VGS = 5.0V, See Fig. 6 and 13 „ † ––– 7.1 ––– VDD = 28V ––– 74 ––– ID = 11A ns ––– 20 ––– RG = 12Ω, VGS = 5.0V ––– 29 ––– R D = 2.4Ω, See Fig. 10 „ † Between lead, ––– 4.5 ––– nH 6mm (0.25in.) G from package ––– 7.5 ––– and center of die contact ––– 480 ––– VGS = 0V ––– 130 ––– pF V DS = 25V ––– 61 ––– ƒ = 1.0MHz, See Fig. 5 † D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 17 showing the A G integral reverse ––– ––– 72 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 11A, V GS = 0V „ ––– 60 90 ns TJ = 25°C, IF = 11A ––– 130 200 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact ‚ VDD = 25V, starting TJ = 25°C, L = 790µH RG = 25Ω, I AS = 11A. (See Figure 12) TJ ≤ 175°C ƒ ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, † Uses IRLZ24N data and test conditions. 2 www.irf.com IRLR/U024N 100 V GS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 10 ID , D rain-to-S ource C urrent (A ) ID , D ra in -to-S ou rce C u rrent (A ) V GS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 10 2 .5V 1 1 2.5 V 2 0 µ s P U L S E W ID T H T J = 2 5°C 0.1 1 10 0.1 A 0.1 0.1 1 2 0 µ s P U LS E W ID T H T J = 1 75 °C 10 100 A 100 V D S , D rain-to-S ource V olta g e ( V ) V D S , D rain-to-S ource V olta g e ( V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 TJ = 2 5 °C R D S (on ) , D rain -to-S ou rc e O n R es is tan c e (N orm a liz ed) I D = 17 A 18 A I D , D rain-to-So urce C urren t (A ) 2.5 TJ = 1 7 5 °C 10 2.0 1.5 1 1.0 0.5 0.1 2 3 4 5 6 V D S = 1 5V 2 0µ s P U L S E W ID TH 7 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 1 0V 100 120 140 160 180 A V G S , G ate-to -So urce Volta g e ( V ) T J , J unc tion T em perature (°C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR/U024N 800 V G S , G ate-to-S ource V oltage (V ) C , Capacitance (pF) 600 C i ss V GS C is s C rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd 15 I D = 11 A V D S = 4 4V V D S = 2 8V 12 9 400 C o ss 6 200 C r ss 3 0 1 10 100 A 0 0 4 8 F O R TE S T C IRC UIT S E E FIG U R E 1 3 12 16 20 A V D S , D rain-to-S ourc e V olta g e ( V ) Q G , T otal G ate C har g e ( nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 I S D , R ev ers e D rain C urre nt (A ) O P E R AT ION IN TH IS AR E A LIM ITE D B Y R D S (on) I D , D rain C urrent (A ) T J = 1 75 °C T J = 25°C 10 100 1 0µ s 10 1 00 µ s 1 0.4 0.8 1.2 1.6 VG S = 0V A 1 1 T C = 2 5°C T J = 175°C S in g le P ulse 10 1m s 1 0m s A 100 2.0 V S D , S ource-to-D rain V olta g e ( V ) VD S , Drain-to-Source Volta g e ( V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR/U024N 20 VDS VGS RD D.U.T. + I D , Drain Current (A) 15 RG -VDD 5V 10 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Therm al R esponse (Z thJ C ) D = 0 .5 0 1 0 .2 0 0 .1 0 0 .0 5 0 .0 2 0 .0 1 0.1 PD M S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N ote s: 1 . D u ty fac tor D = t t 1 t2 1 /t 2 0.01 0.00001 2. P e a k TJ = P D M x Z th JC + T C A 1 0.0001 0.001 0.01 0.1 t 1 , R e ctan g ula r P ulse D u ratio n (sec ) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U024N 140 E A S , S ingle Pulse Avalanc he E nergy (m J) TO P 120 1 5V B OTTOM 100 ID 4 .5 A 7.8 A 1 1A VDS L D R IV E R 80 RG 20V tp D .U .T IA S + V - DD 60 A 0 .0 1 Ω 40 Fig 12a. Unclamped Inductive Test Circuit 20 0 V DD = 25 V 25 50 75 100 125 150 A 175 V (B R )D SS tp S tartin g T J , J unc tion T em perature ( °C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLR/U024N Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® MOSFETs www.irf.com 7 IRLR/U024N D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 .2 8 ( .0 9 0 ) 4 .5 7 ( .1 8 0 ) 0 .8 9 (.0 3 5 ) 3X 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) M AMB N O TE S : 2X 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information 8 www.irf.com IRLR/U024N I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S OUR C E 4 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 9 .6 5 (.3 8 0 ) 8 .8 9 (.3 5 0 ) 2 3 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U TL IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 3X 0 .8 9 ( .0 3 5 ) 0 .6 4 ( .0 2 5 ) M AMB 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .58 (.0 2 3 ) 0 .46 (.0 1 8 ) 2 .2 8 (.0 9 0 ) 2X 0 .2 5 (.0 1 0 ) I-Pak (TO-251AA) Part Marking Information www.irf.com 9 IRLR/U024N D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 1 6.3 ( .641 ) 1 5.7 ( .619 ) 16 .3 ( .641 ) 15 .7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N 8.1 ( .318 ) 7.9 ( .312 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. 2/10 10 www.irf.com