IRLU3802

PD - 94536 IRLR3802 IRLU3802 Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters l Power Management for Netcom, Computing and Portable Applications. HEXFET® Power MOSFET VDSS 12V RDS(on) max 8.5mΩ Qg 27nC Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current D-Pak IRLR3802 I-Pak IRLU3802 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 12 ± 12 84 „ 60„ 320 88 44 0.59 -55 to + 175 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 1.7 40 110 Units °C/W Notes  through „ are on page 9 www.irf.com 1 8/22/02 IRLR/U3802 Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Q gs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Min. 12 ––– ––– ––– 0.6 ––– ––– ––– ––– ––– 31 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.009 6.5 ––– ––– -3.2 ––– ––– ––– ––– ––– 27 3.6 2.0 10 11 12 28 11 14 21 17 2490 2150 530 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, I D = 1mA ƒ 8.5 VGS = 4.5V, ID = 15A ƒ mΩ 30 VGS = 2.8V, ID = 12A 1.9 V VDS = VGS, ID = 250µA ––– mV/°C 100 VDS = 9.6V, VGS = 0V µA 250 VDS = 9.6V, VGS = 0V, TJ = 125°C 200 VGS = 12V nA -200 VGS = -12V ––– S VDS = 6.0V, ID = 12A 41 ––– VDS = 6.0V ––– VGS = 5.0V ––– nC ID = 6.0A ––– See Fig.16 ––– ––– nC VDS = 10V, VGS = 0V ––– VDD = 6.0V, VGS = 4.5Vƒ ––– ns ID = 12A ––– Clamped Inductive Load ––– ––– VGS = 0V ––– pF VDS = 6.0V ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 300 20 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.81 0.65 52 54 50 50 84„ A 320 1.2 ––– 78 81 75 75 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V ƒ TJ = 125°C, IS = 12A, VGS = 0V ƒ TJ = 25°C, IF = 12A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 12A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRLR/U3802 1000 VGS 10V 4.5V 3.5V 2.5V 2.3V 2.0V 1.8V BOTTOM 1.5V TOP 1000 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 VGS 10V 4 .5V 3.5V 2.5V 2.3V 2.0V 1.8V BOTTOM 1.5V TOP 10 10 1 1.5V 1 1.5V 0.1 0.01 0.1 1 20µs PULSE WIDTH Tj = 25°C 10 0.1 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 1.5 RDS(on) , Drain-to-Source On Resistance ID = 84A VGS = 4.5V ID, Drain-to-Source Current (Α) T J = 25°C 100 T J = 175°C 10 (Normalized) 1.0 1 0 1.0 2.0 3.0 VDS = 5.0V 20µs PULSE WIDTH 4.0 5.0 6.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR/U3802 100000 VGS = 0V, f = 1 MHZ Ciss = C + C , Cds SHORTED gs gd Crss = C gd Coss =C +C ds gd 12 ID= 6.0A VGS , Gate-to-Source Voltage (V) VDS = 12V 10 8 6 4 2 0 C, Capacitance (pF) 10000 Ciss Coss 1000 Crss 100 1 10 100 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA L IMITED BY RDS (on) 100.0 T J = 175°C 10.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100µsec 1msec 10 Tc = 25°C Tj = 175°C Single Pulse 1 0 1 10 100 10msec 1.0 T J = 25°C VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR/U3802 LD VDS 100 LIMITED BY PACKAGE 80 ID , Drain Current (A) D.U.T VDD 60 VGS Pulse Width < 1µs Duty Factor < 0.1% 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 25 50 75 100 125 150 175 0 T C , Case Temperature (°C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tf td(off) tr Fig 10b. Switching Time Waveforms 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U3802 5000 EAS, Single Pulse Avalanche Energy (mJ) 15V TOP VDS L DRIVER 4000 BOTTOM ID 8.0A 14A 20A RG VGS 20V D.U.T IAS tp + V - DD 3000 A 0.01Ω 2000 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 1000 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 1.4 Current Regulator Same Type as D.U.T. VGS(th) Gate threshold Voltage (V) 1.2 12V 50KΩ .2µF .3µF ID = 250µA 1.0 D.U.T. 0.8 + V - DS VGS 0.6 3mA 0.4 IG ID Current Sampling Resistors 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Fig 14. Gate Charge Test Circuit T J , Temperature ( °C ) Fig 13. Threshold Voltage Vs. Temperature 6 www.irf.com IRLR/U3802 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRLR/U3802 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 0.58 (.023) 0.46 (.018) 2.28 (.090) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" PART NUMBE R INT ERNAT IONAL RECT IF IER LOGO IRFU120 12 916A 34 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A 8 www.irf.com IRLR/U3802 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 6.45 (.245) 5.68 (.224) 1.52 (.060) 1.15 (.045) 1 -B2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 3 6.22 (.245) 5.97 (.235) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 3X 0.89 (.035) 0.64 (.025) M AMB 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 2.28 (.090) 2X 0.25 (.010) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN THE AS S EMBLY LINE "A" PART NUMBER INTERNAT IONAL RECTIFIER LOGO IRFU120 919A 78 56 DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A AS S EMBLY LOT CODE www.irf.com 9 IRLR/U3802 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. ‚ Starting TJ = 25°C, L = 1.4mH RG = 25Ω, IAS = 20A. * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrialmarket. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.8/02 10 www.irf.com