PD - 97146A
IRLR8726PbF IRLU8726PbF
HEXFET® Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg (typ.) Converters for Computer Processor Power 30V 5.8m @VGS = 10V 15nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D D for Telecom and Industrial Use
:
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant
G
D
S G D
S
D-Pak IRLR8726PbF G D
I-Pak IRLU8726PbF S
Gate
Drain
Max.
30 ± 20 86 61
Source
Units
V
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
f f
A W W/°C °C
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
h h
340 75 38 0.5 -55 to + 175 300 (1.6mm from case)
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case
h
Typ.
Max.
2.0 50 110
Units
°C/W
Junction-to-Ambient (PCB Mount) Junction-to-Ambient
h
ghÃ
––– ––– –––
Notes through are on page 11
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
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1
11/23/09
IRLR/U8726PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 73 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 20 4.0 5.8 1.80 -8.6 ––– ––– ––– ––– ––– 15 3.7 1.9 5.7 3.7 7.6 10 2.0 12 49 15 16 2150 480 205 ––– ––– 5.8 8.0 2.35 ––– 1.0 150 100 -100 ––– 23 ––– ––– ––– ––– ––– ––– 3.5 ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– pF ns nC Ω ID = 20A RG = 1.8Ω nC VDS = 15V VGS = 4.5V ID = 20A S nA V mV/°C µA V
Conditions
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A
e e
VDS = VGS, ID = 50µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 20A
See Fig. 15 VDS = 15V, VGS = 0V VDD = 15V, VGS = 4.5V
e
See Fig. 13 VGS = 0V VDS = 15V ƒ = 1.0MHz Max. 120 20 Units mJ A
Avalanche Characteristics
EAS IAR
Ã
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– 24 52 86
f
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/µs
A 340 1.0 36 78 V ns nC
Ã
e
2
e
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IRLR/U8726PbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.7V 2.5V
TOP
100
BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.7V 2.5V
10
10
1
≤ 60µs PULSE WIDTH Tj = 25°C 2.5V
2.5V ≤ 60µs PULSE WIDTH Tj = 175°C
1 0.1 1 10 100
0.1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 25A VGS = 10V
1.5
100
10
TJ = 175°C TJ = 25°C
1
1.0
VDS = 15V
0.1 0.0 2.0 4.0
≤ 60µs PULSE WIDTH
6.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRLR/U8726PbF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12 10 8 6 4 2 0
ID= 20A VDS= 24V VDS= 15V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100 1 10 100
0
4
8
12 16 20 24 28 32 36 40
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
10000
TJ = 175°C
ISD , Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
1000 100µsec 1msec 10msec
100
100
10
TJ = 25°C
10
1
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
TC= 25°C TJ = 175°C
Single Pulse 0.1 0.1 1 10 100
VSD , Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR/U8726PbF
100 LIMITED BY PACKAGE
VGS(th) Gate threshold Voltage (V)
2.5
ID = 500µA ID = 50µA
2.0
80
ID , Drain Current (A)
ID = 25µA
60
1.5
40
20
1.0
0 25 50 75 100 125 150 175 TC , Case Temperature (°C)
0.5 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( ZthJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
τJ
R1 R1 τJ τ1 τ2
R2 R2
R3 R3 τ3
R4 R4 τC τ τ4
τ1
τ2
τ3
τ4
0.01
Ci= τi/Ri Ci i/Ri
Ri (°C/W) τι (sec) 0.014297 0.000003 0.373312 0.00009 1.010326 0.000973 0.602065 0.007272
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8726PbF
EAS, Single Pulse Avalanche Energy (mJ)
500 400
ID 5.6A 8.2A BOTTOM 20A
TOP
300
200
100
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
0.01Ω
I AS
Fig 12b. Unclamped Inductive Test Circuit
V DS VGS RG V GS
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 12c. Unclamped Inductive Waveforms
VDS 90%
RD
D.U.T.
+
-VDD
10% VGS
td(on) tr t d(off) tf
Fig 13a. Switching Time Test Circuit
Fig 13b. Switching Time Waveforms
6
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IRLR/U8726PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
• • • •
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 14. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 15. Gate Charge Test Circuit
Fig 16. Gate Charge Waveform
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IRLR/U8726PbF
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRLR/U8726PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
@Y6HQG@) UCDTÃDTÃ6IÃDSAV ! XDUCÃ6TT@H7G` GPUÃ8P9@Ã$%&' 6TT@H7G@9ÃPIÃXXÃ (Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å Ir)ÃÅQÅÃvÃhriyÃyvrÃvv vqvphrÃGrhqA
rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRLR/U8726PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRLR/U8726PbF
Orderable part number Package Type IRLR8726PBF IRLR8726TRPBF IRLU8726PBF D-PAK D-PAK I-PAK Standard Pack Form Quantity Tube/Bulk 75 Tape and Reel 2000 Tube/Bulk 75 Note
Qualification information† D-PAK Qualification level Moisture Sensitivity Level RoHS compliant I-PAK Qualification level Moisture Sensitivity Level RoHS compliant Industrial Not applicable Yes Consumer†† MS L1 (per JEDE C J-S T D-020D Yes
†††
)
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.605mH, RG = 25Ω, IAS = 20A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately at 90°C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2009
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