IRLZ24NLPBF

Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET D IRLZ24NSPbF IRLZ24NLPbF VDSS = 55V RDS(on) = 0.06Ω PD - 95584 G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ24NL) is available for lowprofile applications. D 2 Pak TO-262 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current  … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ … Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 18 13 72 3.8 45 0.30 ±16 68 11 4.5 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. ––– ––– Max. 3.3 40 Units °C/W www.irf.com 1 07/20/04 IRLZ24NS/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance P arameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. 55 ––– ––– ––– ––– 1.0 8.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.061 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.1 74 20 29 Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA… 0.060 V GS = 10V, ID = 11A „ 0.075 Ω V GS = 5.0V, ID = 11A „ 0.105 V GS = 4.0V, ID = 9.0A „ 2.0 V V DS = V GS, ID = 250µA ––– S V DS = 25V, I D = 11A… 25 V DS = 55V, V GS = 0V µA 250 V DS = 44V, VGS = 0V, TJ = 150°C 100 V GS = 16V nA -100 V GS = -16V 15 I D = 11A 3.7 nC V DS = 44V 8.5 V GS = 5.0V, See Fig. 6 and 13 „ … ––– V DD = 28V ––– I D = 11A ns ––– R G = 12Ω, VGS = 5.0V ––– R D = 2.4Ω, See Fig. 10 „ … Between lead, 7.5 ––– nH and center of die contact 480 ––– V GS = 0V 130 ––– pF V DS = 25V 61 ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics Min. Typ. Max. Units IS I SM V SD trr Q rr ton Conditions D MOSFET symbol ––– ––– 18 showing the A G integral reverse ––– ––– 72 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V „ ––– 60 90 ns TJ = 25°C, IF = 11A ––– 130 200 nC di/dt = 100A/µs „ … Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) RG = 25Ω, IAS = 11A. (See Figure 12) ƒ ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ‚ VDD = 25V, starting TJ = 25°C, L = 790µH „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Uses IRLZ24N data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRLZ24NS/LPbF 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 ID , Drain-to-Source Current (A) 10 ID , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 10 2.5V 1 1 2.5V 20µs PULSE WIDTH T J = 25°C 1 10 0.1 0.1 A 100 0.1 0.1 20µs PULSE WIDTH T J = 175°C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 TJ = 25°C R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 18A I D , Drain-to-Source Current (A) 2.5 TJ = 175°C 10 2.0 1.5 1 1.0 0.5 0.1 2 3 4 5 6 V DS = 15V 20µs PULSE WIDTH 7 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLZ24NS/LPbF 800 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 600 Ciss V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 15 I D = 11A V DS = 44V V DS = 28V 12 9 400 Coss 6 200 Crss 3 0 1 10 100 A 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 20 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) TJ = 175°C TJ = 25°C 10 100 10µs 10 100µs 1 0.4 0.8 1.2 1.6 VGS = 0V A 1 1 TC = 25°C TJ = 175°C Single Pulse 10 1ms 10ms 2.0 A 100 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLZ24NS/LPbF 20 V DS 16 RD VGS RG ID, Drain Current (Amps) D.U.T. V DD + 12 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 A 175 TC , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t P DM 0.1 t 1 t2 1 /t 2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C A 1 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLZ24NS/LPbF L VDS D.U.T. RG + V - DD 5.0 V E AS , Single Pulse Avalanche Energy (mJ) 140 TOP 120 BOTTOM 100 ID 4.5A 7.8A 11A IAS tp 0.01Ω 80 60 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 40 20 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (°C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF 10 V QGS VG QGD VGS 3mA .3µF D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLZ24NS/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLZ24NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MBL E D ON WW 02, 2000 IN T HE AS S EMB LY L INE "L " Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S EMBL Y L OT CODE PAR T NU MBE R F 530S DAT E CODE YE AR 0 = 2000 WE EK 02 L INE L OR INT E RNAT IONAL RE CT IF IE R L OGO AS S E MB LY LOT CODE PART NUMB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E PR ODUCT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E CODE 8 www.irf.com IRLZ24NS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPL E : T HIS IS AN IRL 3103L L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T HE AS S E MB L Y L INE "C" Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E RNAT IONAL RE CT IF IE R L OGO AS S E MB L Y L OT CODE PART NUMB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR INT E R NAT IONAL RE CT IF IE R L OGO AS S E MB L Y L OT CODE PART NUMBE R DAT E CODE P = DE S IGNAT E S L E AD-F RE E PR ODU CT (OPT IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE www.irf.com 9 IRLZ24NS/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) F EED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 10 www.irf.com