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IRS2101PBF

IRS2101PBF

  • 厂商:

    IRF

  • 封装:

  • 描述:

    IRS2101PBF - HIGH AND LOW SIDE DRIVER - International Rectifier

  • 数据手册
  • 价格&库存
IRS2101PBF 数据手册
Data Sheet No. PD60250 IRS2101(S)PbF • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V • Undervoltage lockout • 3.3 V, 5 V, and 15 V logic input compatible • Matched propagation delay for both channels • Outputs in phase with inputs • RoHS compliant Features HIGH AND LOW SIDE DRIVER Product Summary VOFFSET IO+/VOUT ton/off (typ.) Delay Matching 600 V max. 130 mA/270 mA 10 V - 20 V 160 ns/150 ns 50 ns Description The IRS2101 is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highside configuration which operates up to 600 V. Packages 8-Lead SOIC IRS2101S 8-Lead PDIP IRS2101 Typical Connection up to 600 V VCC VCC HIN LIN VB HO VS LO TO LOAD HIN LIN COM IRS2101 (Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1 IRS2101(S)PbF Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO VCC VLO VIN dVS/dt PD RthJA TJ TS TL Definition High-side floating supply voltage High-side floating supply offset voltage High-side floating output voltage Low-side and logic fixed supply voltage Low-side output voltage Logic input voltage (HIN & LIN) Allowable offset supply voltage transient Package power dissipation @ TA ≤ +25 °C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8 lead PDIP) (8 lead SOIC) (8 lead PDIP) (8 lead SOIC) Min. -0.3 V B - 25 VS - 0.3 -0.3 -0.3 -0.3 — — — — — — -55 — Max. 625 VB + 0.3 VB + 0.3 25 VCC + 0.3 VCC + 0.3 50 1.0 0.625 125 200 150 150 300 Units V V/ns W °C/W °C Recommended Operating Conditions The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at a 15 V differential. Symbol VB VS VHO VCC VLO VIN TA Definition High-side floating supply absolute voltage High-side floating supply offset voltage High-side floating output voltage Low-side and logic fixed supply voltage Low-side output voltage Logic input voltage (HIN & LIN) Ambient temperature Min. VS + 10 Note 1 VS 10 0 0 -40 Max. VS + 20 600 VB 20 VCC VCC 125 Units V °C Note 1: Logic operational for VS of -5 V to +600 V. Logic state held for VS of -5 V to -VBS. (Please refer to the Design Tip DT97-3 for more details). www.irf.com 2 IRS2101(S)PbF Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15 V, CL = 1000 pF and TA = 25 °C unless otherwise specified. Symbol ton toff tr tf MT Definition Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time Delay matching, HS & LS turn-on/off Min. Typ. Max. Units Test Conditions — — — — — 160 150 70 35 — 220 220 170 90 50 ns VS = 0 V VS = 600 V Static Electrical Characteristics VBIAS (VCC, VBS) = 15 V and TA = 25 °C unless otherwise specified. The VIN, VTH, and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol VIH VIL VOH VOL ILK IQBS IQCC IIN+ IINVCCUV+ VCCUVIO+ Definition Logic “1” input voltage Logic “0” input voltage High level output voltage, VBIAS - VO Low level output voltage, VO Offset supply leakage current Quiescent VBS supply current Quiescent VCC supply current Logic “1” input bias current Logic “0” input bias current VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold Output high short circuit pulsed current Min. Typ. Max. Units Test Conditions 2.5 — — — — — — — — 8 7.4 130 — — 0.05 0.02 — 30 150 3 — 8.9 8.2 290 — 0.8 0.2 0.1 50 55 270 10 5 9.8 9 — mA V VO = 0 V VIN = Logic “1” PW ≤ 10 µs VO = 15 V VIN = Logic “0” PW ≤ 10 µs µA VIN = 0 V or 5 V VIN = 5 V VIN = 0 V VB = VS = 600 V V IO = 2 mA VCC = 10 V to 20 V IO- Output low short circuit pulsed current 270 600 — www.irf.com 3 IRS2101(S)PbF Functional Block Diagram VB Q PULSE FILTER R S VS HO HV LEVEL SHIFT HIN PULSE GEN UV DETECT VCC LIN LO COM IRS2101 www.irf.com 4 IRS2101(S)PbF Lead Definitions Symbol HIN LIN VB HO VS VCC LO COM Description Logic input for high-side gate driver output (HO), in phase Logic input for low-side gate driver output (LO), in phase High-side floating supply High-side gate drive output High-side floating supply return Low-side and logic fixed supply Low-side gate drive output Low-side return Lead Assignments 8 Lead PDIP 8 Lead SOIC IRS2101PbF Part Number IRS2101SPbF www.irf.com 5 IRS2101(S)PbF HIN LIN HIN LIN ton 50% 50% tr 90% toff 90% tf HO LO Figure 1. Input/Output Timing Diagram HO LO 10% 10% Figure 2. Switching Time Waveform Definitions HIN LIN 50% 50% LO HO 10% MT 90% MT LO HO Figure 3. Delay Matching Waveform Definitions www.irf.com 6 IRS2101(S)PbF 500 Turn-On Delay Time (ns) 400 300 200 100 Max . Turn-On Delay Time (ns) 500 400 300 200 Max. Typ. 100 0 Ty p. 0 -50 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (°C) VBIAS Supply Voltage (V) Figure 6A. Turn-On Time vs. Temperature Figure 6B. Turn-On Time vs. Supply Voltage 500 Turn-On Delay Time (ns) 5 00 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 Turn-Off Delay Time (ns) 4 00 3 00 2 00 1 00 T yp . 0 -50 -25 0 25 50 75 Temperature (°C) 1 00 1 25 M ax . Input Voltage (V) Figure 6C. Turn-On Time vs. Input Voltage 500 Figure 7A. Turn-Off Time vs. Temperature 500 Turn-Off Delay Time (ns 400 300 200 100 0 Typ. Max. Turn-Off Delay Time (ns) 400 300 200 Typ. 100 0 10 12 14 16 VBIAS Supply Voltage (V) 18 20 Max. 0 2 4 6 8 10 12 14 16 18 20 Input Voltage (V) Figure 7B. Turn-Off Time vs. Supply Voltage www.irf.com Figure 7C. Turn-Off Time vs. Input Voltage 7 IRS2101(S)PbF 500 Turn-On Rise Time (ns) Turn-On Rise Time (ns) 500 400 300 Max. 400 300 200 100 Typ. 200 100 Typ. Max. 0 -50 -25 0 25 50 75 100 125 Temperature (°C) 0 10 12 14 16 18 20 VBIAS Supply Voltage (V) Figure 9A. Turn-On Rise Time vs. Temperature Figure 9B. Turn-On Rise Time vs. Voltage 200 Turn-Off Fall Time (ns) Turn-Off Fall Time (ns) 200 150 100 50 Typ. 150 100 Max. Max. 50 Typ. 0 -50 -25 0 25 50 75 100 125 Temperature (°C) 0 10 12 14 16 18 20 VBIAS Supply Voltage (V) Figure 10A. Turn-Off Fall Time vs. Temperature 8 7 Input Voltage (V) 6 5 4 3 2 1 0 -50 -25 0 25 50 o Min. Figure 10B. Turn-Off Fall Time vs. Voltage 8 7 Input Voltage (V) 6 5 4 3 2 1 0 Min. 75 100 125 10 12 14 16 18 20 Temperature ( C) VBIAS Supply Voltage (V) Figure 12A. Logic "1" Input Voltage vs. Temperature www.irf.com Figure 12B. Logic "1" Input Voltage vs. Voltage 8 IRS2101(S)PbF Lo gic "0" Input Bia s Current (µA) Logic "0" Input Bias C ur r ent ( µA) 6 5 4 3 2 1 0 -50 -25 0 Max 6 5 4 3 2 1 0 10 12 14 16 18 Supply Voltage (V) 20 Max Temperature (°C) Temperature (°C) Temperature (°C) 25 50 75 100 125 Figure 13A. Logic "0" Input Bias Current vs. Temperature High Level Output Voltage (V) High Level Output Voltage (V) 0.5 0.4 0.3 0.2 0.1 Typ. Figure 13B. Logic "0" Input Bias Current vs. Voltage 0.5 0.4 0.3 Max. Max. 0.2 0.1 Typ. 0.0 -50 -25 0 25 50 ( oC) 75 100 125 Temperature 0.0 10 12 14 16 18 20 V BAIS Supply V oltage (V ) Vcc Supply Voltage (V) Figure 14A. High Level Output Voltage vs. Temperature Low Level Output Voltage (V) Low Level Output Voltage (V) 0.5 0.4 0.3 0.2 0.1 0.0 -50 -25 0 25 50 o Max. Figure 14B. High Level Output vs. Supply Voltage 0.5 0.4 0.3 0.2 Max. 0.1 Typ. Typ. 0 10 12 14 16 18 20 V BIAS Supply Voltage (V) 75 100 125 Temperature ( C) Figure 15A. Low Level Output Voltage vs. Temperature www.irf.com Figure 15B. Low level Output vs.Supply Voltage 9 IRS2101(S)PbF Offset Supply Leakage Current (µA) 500 400 300 200 100 M ax. 0 -5 0 -2 5 0 25 50 75 100 125 Offset Supply Leakage Current (µA) (µA) 500 400 300 200 100 0 0 100 200 300 400 500 600 Max. Temperature (°C) VB Boost Voltage (V) Figure 16A. Offset Supply Current vs. Temperature 1 50 150 Figure 16B. Offset Supply Current vs. Voltage VBS Supply Current (µA) 1 20 90 60 M ax . 30 T yp . 0 -50 -25 0 25 50 75 1 00 1 25 VBS Supply Current (µA) 120 90 60 30 Ty p. 0 10 12 14 16 18 20 Max . Temperature (°C) VBS Floating Supply Voltage (V) Figure 17A. VBS Supply Current vs. Temperature 700 700 Figure 17B. VBS Supply Current vs. Voltage Vcc Supply Current (µA) 600 500 400 300 200 100 0 -5 0 -2 5 0 25 50 75 100 125 Typ. M ax. Vcc Supply Current (µA) 600 500 400 300 200 100 Typ. 0 10 12 14 16 18 20 M ax. Temperature (°C) Vcc Supply Voltage (V) Figure 18A. Vcc Supply Current vs. Temperature www.irf.com Figure 18B. Vcc Supply Current vs. Voltage 10 IRS2101(S)PbF 30 30 Logic 1” Input Current (µA) Logic 1” Input Current (µA) 25 20 15 10 5 Typ. 0 -50 -25 0 25 50 75 100 125 25 20 15 10 5 0 10 12 14 16 18 20 Max. Typ. Max. Temperature (°C) Vcc Supply Voltage (V) Figure 19A. Logic"1" Input Current vs. Temperature 5 Logic “0” Input Current (µA) Logic “0” Input Current (µA) Figure 19B. Logic"1" Input Current vs. Voltage 5 4 3 2 Max. 1 0 10 12 14 16 Vcc Supply Voltage (V) 18 20 4 3 2 Max. 1 0 -50 -25 0 25 50 75 Temperature (°C) 100 125 Figure 20A. Logic "0" Input Current vs. Temperature 11 10 9 8 7 6 -50 Typ. Min. VCC UVLO Threshold - (V) VCC UVLO Threshold +(V) Figure 20B. Logic "0" Input Current vs. Voltage 11 Max. 10 Max. 9 Typ. 8 7 Min. -25 0 25 50 75 100 125 6 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) Figure 21A. Vcc Undervoltage Threshold(+) vs. Temperature www.irf.com Figure 21B. Vcc Undervoltage Threshold(-) vs. Temperature 11 IRS2101(S)PbF 500 400 Typ. 500 Output Source Current (mA) ) ( Output Source Current (mA) 400 300 200 Typ. 300 200 100 0 -50 -25 0 25 50 o Min. 100 Min. 0 75 100 125 10 12 14 16 18 20 Temperature ( C) Temperature (°C) VBIAS Supply Voltage (V) ) S ( Figure 22A. Output Source Current vs. Temperature 1000 Output Sink Current (mA) Output Sink Current (mA) Figure 22B. Output Source Current vs. Supply Voltage 1000 800 600 400 Typ. 800 Typ. 600 400 Min. 200 0 -50 200 Min. 0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (°C) VBIAS Supply Voltage (V) Figure 23A. Output Sink Current vs. Temperature Figure 23B. Output Sink Current vs. Supply Voltage www.irf.com 12 IRS2101(S)PbF Case Outlines 8 Lead PDIP D A 5 B FOOTPRINT 8X 0.72 [.028] 01-6014 01-3003 01 (MS-001AB) INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 DIM A b c D A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A E 6.46 [.255] 1 2 3 4 e e1 H K L 8X 1.78 [.070] .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 3X 1.27 [.050] y A C 0.10 [.004] y K x 45° 8X b 0.25 [.010] NOTES: A1 CAB 8X L 7 8X c 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 8 Lead SOIC www.irf.com 01-6027 01-0021 11 (MS-012AA) 13 IRS2101(S)PbF Tape & Reel 8-lead SOIC LOAD ED TA PE FEED DIRECTION B A H D F C N OT E : CO NTROLLING D IM ENSION IN MM E G C A R R I E R T A P E D IM E N S I O N F O R 8 S O I C N M etr ic Im p er i al Co d e M in M ax M in M ax A 7 .9 0 8.1 0 0. 31 1 0 .3 18 B 3 .9 0 4.1 0 0. 15 3 0 .1 61 C 11 .7 0 1 2. 30 0 .4 6 0 .4 84 D 5 .4 5 5.5 5 0. 21 4 0 .2 18 E 6 .3 0 6.5 0 0. 24 8 0 .2 55 F 5 .1 0 5.3 0 0. 20 0 0 .2 08 G 1 .5 0 n/ a 0. 05 9 n/ a H 1 .5 0 1.6 0 0. 05 9 0 .0 62 F D C E B A G H R E E L D IM E N S I O N S F O R 8 S O IC N M etr ic Im p er i al Co d e M in M ax M in M ax A 32 9. 60 3 30 .2 5 1 2 .9 76 13 .0 0 1 B 20 .9 5 2 1. 45 0. 82 4 0 .8 44 C 12 .8 0 1 3. 20 0. 50 3 0 .5 19 D 1 .9 5 2.4 5 0. 76 7 0 .0 96 E 98 .0 0 1 02 .0 0 3. 85 8 4 .0 15 F n /a 1 8. 40 n /a 0 .7 24 G 14 .5 0 1 7. 10 0. 57 0 0 .6 73 H 12 .4 0 1 4. 40 0. 48 8 0 .5 66 www.irf.com 14 IRS2101(S)PbF LEADFREE PART MARKING INFORMATION Part number S IRxxxxxx Date code YWW? ?XXXX IR logo Pin 1 Identifier ? P MARKING CODE Lead Free Released Non-Lead Free Released Lot Code (Prod mode - 4 digit SPN code) Assembly site code Per SCOP 200-002 ORDER INFORMATION 8-Lead PDIP IRS2101PbF 8-Lead SOIC IRS2101SPbF 8-Lead SOIC Tape & Reel IRS2101STRPbF The SOIC-8 is MSL2 qualified. This product has been designed and qualified for the industrial level. Qualification standards can be found at www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 11/27/2006 www.irf.com 15
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