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IRS2111PBF

IRS2111PBF

  • 厂商:

    IRF

  • 封装:

  • 描述:

    IRS2111PBF - HALF-BRIDGE DRIVER - International Rectifier

  • 数据手册
  • 价格&库存
IRS2111PBF 数据手册
Data Sheet No. PD60253 IRS2111(S)PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • CMOS Schmitt-triggered inputs with pull-down • Matched propagation delay for both channels • Internally set deadtime • High side output in phase with input immune Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600 V max. 200 mA / 420 mA 10 V - 20 V 750 ns & 150 ns 650 ns Description The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Packages 8-Lead PDIP IRS2111PbF 8-Lead SOIC IRS21111SPbF Typical Connection up to 600 V VCC VCC IN VB HO VS TO LOAD IN COM LO (Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1 IRS2111(S)PbF Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figs. 7 through 10. Symbol VB VS VHO VCC VLO VIN dVs/dt PD RthJA TJ TS TL Definition High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side and logic fixed supply voltage Low side output voltage Logic input voltage Allowable offset supply voltage transient (Fig. 2) Package power dissipation @ TA ≤ +25°C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8 Lead PDIP) (8 lead SOIC) (8 lead PDIP) (8 lead SOIC) Min. -0.3 V B - 25 VS - 0.3 -0.3 -0.3 -0.3 — — — — — — -55 — Max. 625 (Note 1) VB + 0.3 VB + 0.3 25 (Note 1) VCC + 0.3 VCC + 0.3 50 1.0 0.625 125 200 150 150 300 Units V V/ns W °C/W °C Note 1: All supplies are fully tested at 25 V, and an internal 20 V clamp exists for each supply Recommended Operating Conditions The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at a 15 V differential. Symbol VB VS VHO VCC VLO VIN TA Definition High side floating supply absolute voltage High side floating supply offset voltage High side floating output voltage Low side and logic fixed supply voltage Low side output voltage Logic input voltage Ambient temperature Min. VS + 10 Note 2 VS 10 0 0 -40 Max. VS + 20 600 VB 20 VCC VCC 125 Units V °C Note 2: Logic operational for VS of -5 V to +600 V. Logic state held for VS of -5 V to -VBS. (Please refer to the Design Tip DT97-3 for more details). www.irf.com 2 IRS2111(S)PbF Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15 V, CL = 1000 pF and TA = 25 °C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Fig. 3. Symbol ton toff tr tf DT MT Definition Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time Deadtime, LS turn-off to HS turn-on & HS turn-off to LS turn-on Delay matching, HS & LS turn-on/off Min. Typ. Max. Units Test Conditions 550 — — — 480 — 750 150 75 35 650 30 950 180 130 65 820 — ns VS = 0 V VS = 600 V Static Electrical Characteristics VBIAS (VCC, VBS) = 15 V and TA = 25 °C unless otherwise specified. The VIN, VTH, and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol VIH Definition Logic “1” input voltage for HO & logic “0” for LO Min. Typ. Max. Units Test Conditions 6.4 9.5 12.6 — — — — — — — 0.05 0.02 — 50 70 30 — 8.6 8.2 8.6 8.2 290 — — — 3.8 6.0 8.3 0.2 0.1 50 100 180 50 1.0 9.6 9.2 9.6 9.2 — mA VO = 0 V, VIN = VCC PW ≤ 10 µs VO = 15 V, VIN = 0 V PW ≤ 10 µs V µA VIN = 0 V or VCC VIN = VCC VIN = 0 V mV V VCC = 10 V VCC = 15 V VCC = 20 V VCC = 10 V VCC = 15 V VCC = 20 V IO = 2 mA VB = VS = 600 V VIL VOH VOL ILK IQBS IQCC IIN+ IINVBSUV+ VBSUVVCCUV+ VCCUVIO+ IO- Logic “0” input voltage for HO & logic “1” for LO High level output voltage, VBIAS - VO Low level output voltage, VO Offset supply leakage current Quiescent VBS supply current Quiescent VCC supply current Logic “1” input bias current Logic “0” input bias current VBS supply undervoltage positive going threshold VBS supply undervoltage negative going threshold VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold Output high short circuit pulsed current — — — — — — — — — 7.6 7.2 7.6 7.2 200 Output low short circuit pulsed current 420 600 — www.irf.com 3 IRS2111(S)PbF Functional Block Diagram VB UV DETECT DEAD TIME PULSE GEN IN UV DETECT HV LEVEL SHIFT R Q R S VS HO PULSE FILTER VCC LO DEAD TIME COM Lead Definitions Symbol Description IN VB HO VS VCC LO COM Logic input for high side and low side gate driver outputs (HO & LO), in phase with HO High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return Lead Assignments 8 Lead DIP 8 Lead SOIC IRS2111 Part Number www.irf.com IRS2111S 4 IRS2111(S)PbF IN HO LO Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit IN(LO) 50% 50% IN(HO) ton tr 90% toff 90% tf LO HO Figure 3. Switching Time Test Circuit 10% 10% Figure 4. Switching Time Waveform Definition 50% 50% IN (LO) 50% 50% IN IN (HO) 90% LO HO 10% HO LO 90% 10% DT MT MT 90% 10% Figure 5. Deadtime Waveform Definitions LO HO Figure 6. Delay Matching Waveform Definitions www.irf.com 5 IRS2111(S)PbF 1500 Turn-On Delay Time (ns) M ax. Typ. Mi n. 1500 Turn-On Delay Time (ns) 1250 1000 750 500 250 0 -50 1250 Max. 1000 750 500 250 0 Typ. Min. -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature ( oC) Figure 7A Turn-On Time vs Temperature V BIA S Supply Voltage (V) Figure 7B Turn-On Time vs Voltage 400 Turn-Off Delay Time (ns) 350 300 250 200 150 100 50 0 -50 -25 0 25 50 75 Temperature (°C) 100 125 Typ Max 400 Turn-Off Delay Time (ns)) 350 300 250 200 150 100 50 0 10 12 14 16 18 20 Typ Max V BIAS Supply Voltage Figure 8A Turn-Off Time vs Temperature Figure 8B Turn-Off Time vs Voltage 400 Turn-On Rise Time (ns) 300 250 200 150 100 50 0 -50 -25 0 25 50 Typ Max Turn-On Rise Time (ns) 350 400 350 300 250 200 150 100 50 0 Max Typ 10 75 100 125 Temperature (°C) 12 14 16 18 20 V BIAS Supply Voltage (V) Figure 9B Turn-On Rise Time vs Voltage Figure 9A Turn-On Rise Time vs Temperature www.irf.com 6 IRS2111(S)PbF 200 200 Turn-Off Fall Time (ns) 100 Turn-Off Fall Time (ns) 150 150 Max 100 Max 50 Typ 50 Typ 0 -50 -25 0 25 50 75 Temperature (°C) 100 125 0 10 12 14 16 18 20 VBIAS Supply Voltage (V) Figure 10A Turn-Off Fall Time vs Temperature Figure 10B Turn-Off Fall Time vs Voltage 1250 1000 750 500 250 0 -50 M ax. 1250 1000 Deadtime (ns) 750 500 250 0 -25 0 25 50 75 100 125 10 12 14 16 18 20 VBIAS Supply Voltage (V) Figure 11B Deadtime vs Voltage 15 Deadtime (ns) Max. Typ. Min. Typ. Mi n. Temperature (oC) Figure 11A Deadtime vs Temperature Logic “1” Input Threshold (V) 15 12 Min Logic “1” Input Threshold (V) 12 Min 0 -50 -25 0 25 50 75 100 125 Temperature (°C) 0 10 3 3 6 6 9 9 12 14 16 18 20 Figure 12A Logic “I” Input voltage for HO & Logic “0” for LO vs Temperature Figure 12B Logic “I” Input voltage for HO & Logic “0” for LO vs Voltage www.irf.com 7 IRS2111(S)PbF Logic “0” Input Threshold (V) Logic “0” Input Threshold (V) 15 12 9 M ax 9 12 15 Max 6 3 0 -50 -25 0 25 50 Temperature (°C) 75 100 125 0 10 3 6 12 14 16 18 20 VCC Logic Supply Voltage (V) Figure 13A Logic “0” Input voltage for HO & Logic “I” for LO vs Temperature Figure 13B Logic “0” Input voltage for HO & Logic “I” for LO vs Voltage High Level Output Voltage (V) High Level Output Voltage (V) 1.0 0.8 0.6 0.4 0.2 Max. Typ. 1.0 0.8 0.6 0.4 0.2 0.0 10 12 14 16 18 20 V cc Supply Voltage (V) Figure 14B. High Level Output vs. Supply Voltage Max. Typ. 0.0 -50 -25 0 25 50 o 75 100 125 Temperature ( C) Figure 14A. High Level Output vs. Tem perature Low Level Output Voltage (V) Low Level Output Voltage (V) 0.5 0.4 0.3 0.2 Max. 0.5 0.4 0.3 0.2 0.1 0 10 12 14 16 18 20 Max. Typ. 0.1 Typ. 0 -50 -25 0 25 50 75 100 125 Temperature ( oC) Figure 15A. Low Level Output vs. Temperature V cc Supply Voltage (V) Figure 15B. Low Level Output vs. Voltage www.irf.com 8 IRS2111(S)PbF Offset Supply Current (µA) Offset Supply Current (µA) 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 Max. 500 400 300 200 M ax . 100 0 0 100 200 300 400 500 600 Temperature (°C) V B B oos t V oltage (v) Figure 16A Offset Supply Current vs Temperature 200 Figure 16B Offset Supply Current vs Voltage 200 VBS Supply Current (µA) VBS Supply Current (µA) 150 Max. 100 Typ. 50 150 Max. 100 Typ. 50 0 -50 -25 0 25 50 75 100 125 Temperature (°C) 0 10 12 14 16 18 20 VBS Floating Supply Voltage (V) Figure 17A VBS Supply Current vs Temperature VCC Supply Current (µA) 500 400 300 Max . 200 100 0 -50 -25 0 25 50 75 100 125 Temperature (°C) Typ. Figure 17B VBS Supply Current vs Voltage 500 VCC Supply Current (µA) 400 300 200 100 Typ Max 0 10 12 14 16 18 20 VCC Fixed Supply Voltage (V) Figure 18A VCC Supply Current vs Temperature Figure 18B VCC Supply Current vs Voltage www.irf.com 9 IRS2111(S)PbF Logic “1” Input Bias Current (µA) Logic “1” Input Bias Current (µA) 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 Temperature (°C) Max. Typ. 120 100 80 60 40 20 0 10 12 14 16 18 20 VCC Supply Voltage (V) Typ. Max. Figure 19A Logic “1” Input Current vs. Temperature Logic “0” Input Bias Current (µA) Logic “0” Input Bias Current (µA) 5 4 3 2 Figure 19B Logic “1” Input Current vs. VCC Voltage 5 4 3 2 1 0 10 12 14 16 18 20 Max. Max. 1 0 -50 -25 0 25 50 75 100 125 Temperature (°C) VCC Supply Voltage (V) Figure 20B. Logic “0” Input Current vs. VCC Voltage 12 V B S U V LO Threshol -(V ) d 11 10 9 8 7 6 Figure 20A. Logic “0” Input Current vs. Temperature 12 VBS UVLO Threshold +(V) 11 Max . 10 9 8 7 6 -50 -25 0 25 50 75 100 125 Temperature (°C) Min. Typ. Max. Typ. Min. -50 -25 0 25 50 75 100 125 Temperature(°C) Figure 21 VBS Undervoltage Threshold (+) vs. Temperature Figure 22 VBS Undervoltage Threshold (-) vs. Temperature www.irf.com 10 IRS2111(S)PbF 11 Vcc Undervoltage Lockout +(V) 10 9 8 7 6 -50 VCC Under voltage Loc kout- ( V) 11 10 Max. Typ. Min. Max. 9 Typ. 8 Min. 7 6 -50 -25 0 25 50 75 100 125 Temperature (°C) -25 0 25 50 75 100 125 Temperature (°C) Figure 23 VCC Undervoltage (-) vs Temperature mA Output Source Current(µΑ) ( mA Output Source Current(µΑ) ( Figure 24 VCC Undervoltage (-) vs Temperature 500 400 300 Min. 500 400 300 Typ. Typ. 200 100 0 -50 -25 0 25 50 75 100 125 Temperature (oC) 200 100 0 10 12 14 16 18 20 V BIAS Supply Voltage (V) Figure 25B Output Source Current vs Voltage Min. Figure 25A Output Source Current vs Temperature 900 m Output Sink Current (( Α)) µA mA Output Sink Current(µΑ)) ( 900 750 600 450 300 150 0 -50 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature ( oC) V BIAS Supply Voltage (V) Figure 26B Output Sink Current vs Voltage Typ. Min. 750 600 450 300 150 0 Typ. Min. Figure 26A Output Sink Current vs Temperature www.irf.com 11 PDF created with pdfFactory trial version www.pdffactory.com IRS2111(S)PbF Junction Temperature(°C) 150 125 100 75 50 25 0 1E+2 320 V Junction Temperature(°C) 150 125 100 320 V 160 V 160 V 30 V 30 V 75 50 25 0 1E+2 1E+3 1E+4 Frequency (kHz) 1E+5 1E+6 1E+3 1E+4 Frequency (kHz) 1E+5 1E+6 Figure 27. IR2111 TJ vs. Frequency (IRFBC20) RGATE = 33 Ω, VCC = 15 V Figure 28. IR2111 TJ vs. Frequency (IRFBC30) RGATE = 22 Ω, VCC = 15 V 150 Junction Temperature (oC) 320 V 160 V Junction Temperature(°C) 150 125 100 75 50 25 0 1E+2 320 V 160 V 30 V 125 100 75 50 25 0 1E+2 30V 1E+3 1E+4 Frequency (kHz) 1E+5 1E+6 1E+3 1E+4 Frequency (kHz) 1E+5 1E+6 Figure 29. IR2111 TJ vs. Frequency (IRFBC40) RGATE = 15 Ω, VCC = 15 V Figure 30. IR2111 TJ vs. Frequency (IRFPC50) RGATE = 10 Ω, VCC = 15 V www.irf.com 12 IRS2111(S)PbF 320 V 150 Junction Temperature (oC) 320 V 140 V 160 V Junction Temperature (oC) 150 125 100 75 50 25 0 1E+2 30 V 125 100 75 50 25 0 1E+2 30 V 1E+3 1E+4 1E+5 1E+6 1E+3 1E+4 1E+5 1E+6 Frequency (kHz) Frequency (kHz) Figure 31. IR2111S TJ vs. Frequency (IRFBC20) RGATE = 33 Ω, VCC = 15 V Figure 32. IR2111S TJ vs. Frequency (IRFBC30) RGATE = 22 Ω, VCC = 15 V 150 Junction Temperature (oC) 320 V 140 V 30 V Junction Temperature (oC) 320 V 140 V 150 125 100 75 50 25 0 1E+2 30 V 125 100 75 50 25 0 1E+2 1E+3 1E+4 1E+5 1E+6 1E+3 1E+4 1E+5 1E+6 Frequency (kHz) Frequency (kHz) Figure 33. IR2111S TJ vs. Frequency (IRFBC40) RGATE = 15 Ω, VCC = 15 V Figure 34. IR2111S TJ vs. Frequency (IRFPC50) RGATE = 10 Ω, VCC = 15 V www.irf.com 13 IRS2111(S)PbF Case outlines 8-Lead PDIP D A 5 B FOOTPRINT 8X 0.72 [.028] 01-6014 01-3003 01 (MS-001AB) INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 DIM A b c D A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A E 6.46 [.255] 1 2 3 4 e e1 H K L 8X 1.78 [.070] .050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 3X 1.27 [.050] y A C 0.10 [.004] y K x 45° 8X b 0.25 [.010] NOTES: A1 CAB 8X L 7 8X c 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 8-Lead SOIC www.irf.com 01-6027 01-0021 11 (MS-012AA) 14 IRS2111(S)PbF Tape & Reel 8-lead SOIC LOAD ED TA PE FEED DIRECTION B A H D F C N OT E : CO NTROLLING D IM ENSION IN MM E G C A R R I E R T A P E D IM E N S I O N F O R 8 S O I C N M etr ic Im p er i al Co d e M in M ax M in M ax A 7 .9 0 8.1 0 0. 31 1 0 .3 18 B 3 .9 0 4.1 0 0. 15 3 0 .1 61 C 11 .7 0 1 2. 30 0 .4 6 0 .4 84 D 5 .4 5 5.5 5 0. 21 4 0 .2 18 E 6 .3 0 6.5 0 0. 24 8 0 .2 55 F 5 .1 0 5.3 0 0. 20 0 0 .2 08 G 1 .5 0 n/ a 0. 05 9 n/ a H 1 .5 0 1.6 0 0. 05 9 0 .0 62 F D C E B A G H R E E L D IM E N S I O N S F O R 8 S O IC N M etr ic Im p er i al Co d e M in M ax M in M ax A 32 9. 60 3 30 .2 5 1 2 .9 76 13 .0 0 1 B 20 .9 5 2 1. 45 0. 82 4 0 .8 44 C 12 .8 0 1 3. 20 0. 50 3 0 .5 19 D 1 .9 5 2.4 5 0. 76 7 0 .0 96 E 98 .0 0 1 02 .0 0 3. 85 8 4 .0 15 F n /a 1 8. 40 n /a 0 .7 24 G 14 .5 0 1 7. 10 0. 57 0 0 .6 73 H 12 .4 0 1 4. 40 0. 48 8 0 .5 66 www.irf.com 15 IRS2111(S)PbF LEADFREE PART MARKING INFORMATION Part number IRSxxxx YWW? ?XXXX Lot Code (Prod mode - 4 digit SPN code) IR logo Date code Pin 1 Identifier ? P MARKING CODE Lead Free Released Non-Lead Free Released Assembly site code Per SCOP 200-002 ORDER INFORMATION 8-Lead PDIP IRS2111PbF 8-Lead SOIC IRS2111SPbF 8-Lead SOIC Tape & Reel IRS2111STRPbF The SOIC-8 is MSL2 qualified. The SOIC-14 is MSL3 qualified. This product has been designed and qualified for the industrial level. Qualification standards can be found at www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/14/2006 www.irf.com 16
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