Data Sheet PD No.60238
IRS2153D(S)PbF
SELF-OSCILLATING HALF-BRIDGE DRIVER IC
Features
Integrated 600V Half-Bridge Gate Driver CT, RT programmable oscillator 15.4V Zener Clamp on VCC Micropower Startup Non-latched shutdown on CT pin (1/6th VCC) Internal bootstrap FET Excellent Latch Immunity on All Inputs & Outputs +/- 50V/ns dV/dt immunity ESD Protection on All Pins 8-lead SOIC or PDIP package 1.1 usec (typ.) internal deadtime
Product Summary
VOFFSET Duty Cycle Driver source/sink current Vclamp Deadtime 600V Max 50% 180/260mA typ. 15.4V typ. 1.1us typ.
Description
The IRS2153D is based on the popular IR2153 selfoscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.
Package
PDIP8 IRS2153DPBF
SO8 IRS2153DSPBF
Typical Connection Diagram
+ AC Rectified Line
RVCC
VCC
1
8
VB CBOOT MHS
IRS2153D
RT
2
7
HO
RT CT CVCC CT COM
3
6
VS
L
RL
4
5
LO
MLS
- AC Rectified Line
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IRS2153D(S)PbF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB VS VHO VLO IRT VRT VCT ICC IOMAX dVS/dt PD PD RθJA RθJA TJ TS TL
Parameter Definition
High Side Floating Supply Voltage High Side Floating Supply Offset Voltage High-Side Floating Output Voltage Low-Side Output Voltage RT Pin Current RT Pin Voltage CT Pin Voltage Supply Current (Note 1) Maximum allowable current at LO and HO due to external power transistor Miller effect. Allowable Offset Voltage Slew Rate Maximum Power Dissipation @ TA ≤ +25ºC, 8-Pin DIP Maximum Power Dissipation @ TA ≤ +25ºC, 8-Pin SOIC Thermal Resistance, Junction to Ambient, 8-Pin DIP Thermal Resistance, Junction to Ambient, 8-Pin SOIC Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds)
Min.
-0.3 V B - 25 VS – 0.3 -0.3 -5 -0.3 -0.3 ---500 -50 ---------55 -55 ---
Max.
625 VB + 0.3 VB + 0.3 VCC + 0.3 5 VCC + 0.3 VCC + 0.3 20 500 50 1.0 0.625 85 128 150 150 300
Units
V V V V mA V V mA
V/ns W W ºC/W ºC/W ºC
Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.4V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section.
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IRS2153D(S)PbF
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
VBS VS VCC ICC TJ
Parameter Definition
High Side Floating Supply Voltage Steady State High Side Floating Supply Offset Voltage Supply Voltage Supply Current Junction Temperature
Min.
VCC - 0.7 -3.0 (Note 2) VCCUV+ +0.1V (Note 3) -40
Max.
VCLAMP 600 VCC CLAMP 5 125
Units
V V V mA ºC
Note 2: Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by more than 5V. Note 3: Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the voltage at this pin.
Recommended Component Values
Symbol
RT CT
Parameter Component
Timing Resistor Value CT Pin Capacitor Value
Min.
1 330
Max.
-----
Units
kΩ pF
IRS2153D Frequency vs. RT
Frequency (Hz) 1000000 CT Values 100000 10000 1000 100 10 1000 10000 100000 1000000 RT (Ohm) 330pf 470pF 1nF 2.2nF 4.7nF 10nF
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IRS2153D(S)PbF
Electrical Characteristics
VBIAS (VCC, VBS) = 14V, CT = 1 nF, VS=0V and TA = 25°C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
VCCUV+ VCCUVVCCUVHYS IQCCUV IQCC ICC VCC CLAMP IQBS VBSUV+ VBSUVILK fOSC d ICT ICTUV VCT+ VCTVCTSD VRT+ VRTVRTUV VRTSD
Definition
Rising VCC Undervoltage Lockout Threshold Falling VCC Undervoltage Lockout Threshold VCC Undervoltage Lockout Hysteresis Micropower Startup VCC Supply Current Quiescent VCC Supply Current VCC Supply Current VCC Zener Clamp Voltage Quiescent VBS Supply Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage negative Going Threshold Offset Supply Leakage Current Oscillator Frequency RT Pin Duty Cycle CT Pin Current UV-Mode CT Pin Pulldown Current Upper CT Ramp Voltage Threshold Lower CT Ramp Voltage Threshold CT Voltage Shutdown Threshold High-Level RT Output Voltage, VCC - VRT Low-Level RT Output Voltage UV-Mode RT Output Voltage SD-Mode RT Output Voltage, VCC - VRT
Min
10.2 8.3 1.6 ------14.4 --8.0 7.0 --18.4 88 ----0.20 ----2.2 ---------------
Typ
10.8 8.8 2.0 130 800 1.8 15.4 60 9.0 8.0 --19.0 93 50
0.02
Max
11.5 9.4 2.4 170 1000 --16.8 80 9.5 9.0 50 19.6 100 --1.0 0.6 ----2.4 50 300 50 300 100 50 300
Units
Test Conditions
Low Voltage Supply Characteristics V µA µA mA V µA V RT = 36.9kΩ ICC = 5mA VCC ≤ VCCUV-
Floating Supply Characteristics
µA kHz % µA mA V mV mV mV mV mV mV mV
VB = VS = 600V RT = 36.5kΩ RT = 7.15kΩ
fo < 100kHz VCC = 7V
Oscillator I/O Characteristics
0.30 9.32 4.66 2.3 10 100 10 100 0 10 100
IRT = -100µA IRT = -1mA IRT = 100µA IRT = 1mA VCC ≤ VCCUVIRT = -100µA,
VCT = 0V
IRT = -1mA,
VCT = 0V
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IRS2153D(S)PbF
Electrical Characteristics
VBIAS (VCC, VBS) = 14V, CT = 1 nF, VS=0V and TA = 25°C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
VOH VOL VOL_UV tr tf tsd td IO+ IO-
Definition
High-Level Output Voltage Low-Level Output Voltage UV-Mode Output Voltage Output Rise Time Output Fall Time Shutdown Propagation Delay Output Deadtime (HO or LO) Output source current Output sink current
Min
------------0.65 -----
Typ
VCC COM COM 120 50 350 1.1 180 260
Max
------220 80 --1.75 -----
Units
Test Conditions
Gate Driver Output Characteristics IO = 0A IO = 0A IO = 0A, VCC ≤ VCCUV-
nsec
µsec mA
Bootstrap FET Characteristics VB_ON IB_CAP IB_10V VB when the bootstrap FET is on VB source current when FET is on VB source current when FET is on --40 10 13.7 55 12 ------V mA
CBS=0.1uF VB=10V
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IRS2153D(S)PbF
Lead Definitions
VCC
1
8
VB
RT
IRS2153D
2
7
HO
CT
3
6
VS
COM
4
5
LO
Symbol
VCC RT CT COM LO VS HO VB Oscillator timing resistor input Oscillator timing capacitor input IC power and signal ground Low-side gate driver output High voltage floating supply return High-side gate driver output High side gate driver floating supply
Lead Description
L ogic and internal gate drive supply voltage
Functional Block Diagram
RT 2 R + R R + R/2 SQ R1 R2 S Q Q
DEAD TIME DEAD TIME PULSE
HV LEVEL SHIFT
8
VB
Q PULSE FILTER R S
6
BOOTSTRAP DRIVE
7
HO
VS
GEN
15.4V
1 VCC
CT 3 R/2
+ -
DELAY
5
LO
4
COM
M1
UV DETECT
6
IRS2153D(S)PbF
Timing Diagram
Operating Mode
VCCUV+
VCC
Fault Mode: CT
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