IRS2153DSPBF

Data Sheet No. PD60238 revE IRS2153(1)D(S)PbF SELF-OSCILLATING HALF-BRIDGE DRIVER IC Features Integrated 600 V half-bridge gate driver CT, RT programmable oscillator 15.4 V Zener clamp on VCC Micropower startup Non-latched shutdown on CT pin (1/6th VCC) Internal bootstrap FET Excellent latch immunity on all inputs and outputs +/- 50 V/ns dV/dt immunity ESD protection on all pins 8-lead SOIC or PDIP package Internal deadtime Product Summary VOFFSET Duty cycle Driver source/sink current Vclamp Deadtime 600 V Max 50% 180 mA/260 mA typ. 15.4 V typ. 1.1 µs typ. (IRS2153D) 0.6 µs typ. (IRS21531D) Description The IRS2153(1)D is based on the popular IR2153 selfoscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers. Package PDIP8 IRS2153(1)DPbF SO8 IRS2153(1)DSPbF Typical Connection Diagram + AC Rectified Line RVCC VCC 1 8 VB CBOOT MHS IRS2153(1)D RT 2 7 HO RT CT CVCC CT COM 3 6 VS L RL 4 5 LO MLS - AC Rectified Line 1 IRS2153(1)D Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO VLO IRT VRT VCT ICC IOMAX dVS/dt PD PD RthJA RthJA TJ TS TL Parameter Definition High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side output voltage RT pin current RT pin voltage CT pin voltage Supply current (Note 1) Maximum allowable current at LO and HO due to external power transistor Miller effect. Allowable offset voltage slew rate Maximum power dissipation @ TA ≤ +25 ºC, 8-Pin DIP Maximum power dissipation @ TA ≤ +25 ºC, 8-Pin SOIC Thermal resistance, junction to ambient, 8-Pin DIP Thermal resistance, junction to ambient, 8-Pin SOIC Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) Min. -0.3 VB - 25 VS – 0.3 -0.3 -5 -0.3 -0.3 ---500 -50 ---------55 -55 --- Max. 625 VB + 0.3 VB + 0.3 VCC + 0.3 5 VCC + 0.3 VCC + 0.3 20 500 50 1.0 0.625 85 128 150 150 300 Units V mA V mA V/ns W ºC/W ºC Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.4 V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section. 2 IRS2153(1)D Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Symbol VBS VS VCC ICC TJ Parameter Definition High side floating supply voltage Steady state side floating supply offset voltage Supply voltage Supply current Junction temperature Min. VCC - 0.7 -3.0 (Note 2) VCCUV+ +0.1 V (Note 3) -40 Max. VCLAMP 600 VCC CLAMP 5 125 Units V mA ºC Note 2: It is recommended to avoid output switching conditions where the negative-going spikes at the VS node would decrease VS below ground by more than -5 V. Note 3: Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6 V zener diode clamping the voltage at this pin. Recommended Component Values Symbol RT CT Parameter Component Timing resistor value CT pin capacitor value Min. 1 330 Max. ----- Units kΩ pF VBIAS (VCC, VBS) = 14 V, VS=0 V and TA = 25 °C, CLO = CHO = 1 nF. Frequency vs. RT 1,000,000 CT Values 100,000 Frequency (Hz) 10,000 1,000 100 10 1,000 330pf 470pF 1nF 2.2nF 4.7nF 10nF 10,000 100,000 1,000,000 RT (Ohm) For further information, see Fig. 12. 3 IRS2153(1)D Electrical Characteristics VBIAS (VCC, VBS) = 14 V, CT = 1 nF, VS=0 V and TA = 25 °C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to COM and are applicable to the respective output leads: HO or LO. CLO = CHO = 1 nF. Symbol VCCUV+ VCCUVVCCUVHYS IQCCUV IQCC ICC VCC CLAMP IQBS VBSUV+ VBSUVILK Definition Rising VCC undervoltage lockout threshold Falling VCC undervoltage lockout threshold VCC undervoltage lockout hysteresis Micropower startup VCC supply current Quiescent VCC supply current VCC supply current VCC zener clamp voltage Quiescent VBS supply current VBS supply undervoltage positive going threshold VBS supply undervoltage negative going threshold Offset supply leakage current Min 10.0 8.0 1.6 ------14.4 --8.0 7.0 --18.4 88 ----0.20 ----2.2 ------------- Typ 11.0 9.0 2.0 130 800 1.8 15.4 60 9.0 8.0 --19.0 93 50 0.02 Max 12.0 10.0 2.4 170 1000 --16.8 80 9.5 Units Test Conditions Low Voltage Supply Characteristics V VCC ≤ VCCUVRT = 36.9 kΩ ICC = 5 mA µA mA V µA Floating Supply Characteristics V 9.0 50 19.6 100 --1.0 0.6 ----2.4 50 300 50 300 100 50 300 mV IRT = -100 µA IRT = -1 mA IRT = 100 µA IRT = 1 mA VCC ≤ VCCUVIRT = -100 µA, VCT = 0 V µA VB = VS = 600 V RT = 36.5 kΩ RT = 7.15 kΩ fo < 100 kHz VCC = 7 V Oscillator I/O Characteristics fOSC d ICT ICTUV VCT+ VCTVCTSD VRT+ VRTVRTUV Oscillator frequency RT pin duty cycle CT pin current UV-mode CT pin pulldown current Upper CT ramp voltage threshold Lower CT ramp voltage threshold CT voltage shutdown threshold High-level RT output voltage, VCC - VRT Low-level RT output voltage UV-mode RT output voltage kHz % µA mA V 0.30 9.32 4.66 2.3 10 100 10 100 0 10 100 VRTSD SD-mode RT output voltage, VCC - VRT --- IRT = -1 mA, VCT = 0 V 4 IRS2153(1)D Electrical Characteristics VBIAS (VCC, VBS) = 14 V, CT = 1 nF, VS=0 V and TA = 25 °C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to COM and are applicable to the respective output leads: HO or LO. CLO = CHO = 1 nF. Symbol VOH VOL VOL_UV tr tf tsd td td IO+ IO- Definition High-level output voltage Low-level output voltage UV-mode output voltage Output rise time Output fall time Shutdown propagation delay Output deadtime (HO or LO) (IRS2153D) Output deadtime (HO or LO) (IRS21531D) Output source current Output sink current Min ------------0.65 0.35 ----- Typ VCC COM COM 120 50 350 1.1 0.6 180 260 Max ------220 80 --1.75 0.85 ----- Units Test Conditions Gate Driver Output Characteristics IO = 0 A V IO = 0 A, VCC ≤ VCCUVns µs µs mA Bootstrap FET Characteristics VB_ON IB_CAP IB_10V VB when the bootstrap FET is on VB source current when FET is on VB source current when FET is on --40 10 13.7 55 12 ------V mA CBS=0.1 uF VB=10 V 5 IRS2153(1)D Lead Definitions VCC 1 8 VB IRS2153(1)D RT 2 7 HO CT 3 6 VS COM 4 5 LO Symbol VCC RT CT COM LO VS HO VB Oscillator timing resistor input Oscillator timing capacitor input IC power and signal ground Low-side gate driver output High voltage floating supply return High-side gate driver output High side gate driver floating supply Lead Description L ogic and internal gate drive supply voltage 6 IRS2153(1)D Functional Block Diagram RT 2 R + R R + R/2 SQ R1 R2 S Q Q DEAD TIME DEAD TIME PULSE HV LEVEL SHIFT 8 VB Q PULSE FILTER R S 6 BOOTSTRAP DRIVE 7 HO VS GEN 15.4V 1 VCC CT 3 R/2 + - DELAY 5 LO 4 COM M1 UV DETECT 7 IRS2153(1)D Timing Diagram Operating Mode VCCUV+ VCC Fault Mode: CT