27 January 2011
IRS2334SPbF/IRS2334MPbF
3 PHASE GATE DRIVER HVIC
Features
Floating channel designed for bootstrap operation Fully operational to 600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20 V Integrated dead time protection Shoot-through (cross-conduction) prevention logic Under-Voltage lockout for both channels Independent 3 half-bridge drivers 3.3 V input logic compatible Advanced input filter Matched propagation delay for both channels Lower di/dt gate driver for better noise immunity Outputs in phase with inputs RoHS compliant
Product Summary
Topology VOFFSET VOUT Io+ & I o- (typical) tON & tOFF (typical) 3 phase ≤ 600 V 10 V – 20 V 200 mA & 350 mA 530 ns
Package Options
Typical Applications
Motor Control Low Power Fans General Purpose Inverters Micro/Mini Inverter Drivers
20 leads wide body SOIC
28 leads MLPQ 5x5 (32 leads without 4)
Typical Connection Diagram
Up to 600V Vcc HIN1,2,3 LIN1,2,3 Vcc HIN1,2,3 LIN1,2,3 VB1,2,3 HO1,2,3 VS 1,2,3 TO LOAD LO1,2,3 COM
IRS2334
GND
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IRS2334SPbF/MPbF
Table of Contents
Description Simplified Block Diagram Typical Application Diagram Qualification Information Absolute Maximum Ratings Recommended Operating Conditions Static Electrical Characteristics Dynamic Electrical Characteristics Functional Block Diagram Input/Output Pin Equivalent Circuit Diagram Lead Definitions Lead Assignments Application Information and Additional Details Parameter Temperature Trends Package Details Tape and Reel Details Part Marking Information Ordering Information
Page
3 3 4 5 6 6 7 7 8 9 10 11 12 21 25 27 29 30
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IRS2334SPbF/MPbF
Description
The IRS2334 is a high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3 V. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration up to 600 V.
Simplified Block Diagram
HV floating well Schmitt trigger, minimum dead time and shoot-through protection HV Level Shifters
to high side power switches (x3)
Delay
to low side power switches (x3)
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IRS2334SPbF/MPbF
Typical Application Diagram
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IRS2334SPbF/MPbF
Qualification Information†
Industrial†† Qualification Level Comments: This IC has passed JEDEC industrial qualification. IR consumer qualification level is granted by extension of the higher Industrial level. MSL2 , 260C (per IPC/JEDEC J-STD-020) Human Body Model ESD Machine Model IC Latch-Up Test RoHS Compliant † †† Class 1C (per JEDEC standard JESD22-A114) Class B (per EIA/JEDEC standard EIA/JESD22-A115) Class I, Level A (per JESD78) Yes
Moisture Sensitivity Level
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information.
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IRS2334SPbF/MPbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM unless otherwise specified. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO1,2,3 VCC VLO1,2,3 VIN PWHIN dVS/dt PD RthJA TJ TS TL † Definition High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side and logic fixed supply voltage Low side output voltage Logic and analog input voltages High-side input pulse width Allowable offset supply voltage slew rate Package power dissipation @ TA ≤ 25°C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) 20 lead SOIC 28 lead MLPQ 20 lead SOIC 28 lead MLPQ Min. -0.3 † VB1,2,3 - 25 VS1,2,3 - 0.3 -0.3 -0.3 -0.3 500 — — — — — — -55 — Max. 625 VB1,2,3 + 0.3 VB1,2,3 + 0.3 † 25 VCC + 0.3 VCC + 0.3 — 50 1.14 3.363 65.8 22.3 150 150 300 Units
V
ns V/ns W °C/W °C
All supplies are fully tested at 25 V. An internal 25 V clamp exists for each supply.
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to COM unless otherwise specified. The VS1,2,3 offset ratings are tested with all supplies biased at 15 V. Symbol VB1,2,3 VS1,2,3 VS1,2,3(t) VHO1,2,3 VCC VLO1,2,3 VIN TA † †† Definition High side floating supply voltage † Static high side floating supply offset voltage Transient high side floating supply offset voltage†† High side floating output voltage Low side and logic fixed supply voltage Low side output voltage Logic input voltage Ambient temperature Min. VS1,2,3 +10 -8 -50 VS1,2,3 10 0 0 -40 Max. VS1,2,3 + 20 600 600 VB1,2,3 20 VCC VCC 125 Units
V
°C
Logic operation for VS of –8 V to 600 V. Logic state held for VS of –8 V to –VBS. Operational for transient negative VS of -50 V with a 50 ns pulse width. Guaranteed by design. Refer to the Application Information section of this datasheet for more details.
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IRS2334SPbF/MPbF
Static Electrical Characteristics
(VCC-COM) = (VB1,2,3-VS1,2,3) = 15 V and TA = 25 oC unless otherwise specified. The VIN and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and VS1,2,3 and are applicable to the output leads LO1,2,3 and HO1,2,3 respectively. The VCCUV and VBSUV parameters are referenced to COM and VS respectively. Symbol VIH VIL VIN,TH+ VIN,THVOH VOL VCCUV+ VBSUV+ VCCUVVBSUVVCCUVH VBSUVH ILK IQBS IQCC IIN+ IINIo+ IoDefinition Logic “1” input voltage Logic “0” input voltage Input positive going threshold Input negative going threshold High level output voltage Low level output voltage VCC and VBS supply under-voltage positive going threshold VCC and VBS supply under-voltage negative going threshold VCC and VBS supply under-voltage hysteresis Offset supply leakage current Quiescent VBS supply current Quiescent VCC supply current Logic “1” input bias current Logic “0” input bias current Output high short circuit pulsed current Output low short circuit pulsed current Min. 2.5 — — — — — 10.4 10.2 0.1 — — — — — 120 250 Typ. — — 1.9 1 0.9 0.4 11.1 10.9 0.2 1 40 300 150 200 350 Max. — 0.8 — — 1.4 0.6 11.6 11.4 — 50 120 700 250 1 — — µA µA µA mA VB =VS = 600 V VIN = 0 V VIN = 5 V VIN = 0 V VO = 0 V or 15 V PW ≤ 10 µs Units Test Conditions
V
IO = 20 mA
Dynamic Electrical Characteristics
Symbol ton toff tr tf tFILIN DT MDT MT PM † Definition
VCC = VB1,2,3 = 15 V, VS1,2,3 = COM, TA = 25 oC and CL = 1000 pF unless otherwise specified. Min. 400 400 — — 200 190 — — — Typ. 530 530 125 50 350 290 — — — Max. 750 750 190 75 510 420 60 50 75 Units Test Conditions
Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time Input filter time Dead time Dead time matching ton, toff propagation delay matching time † PW pulse width distortion
VIN = 0V and 5V ns VIN = 0V & 5V External dead time 0s PW input =10µs
PM is defined as PWIN - PWOUT.
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IRS2334SPbF/MPbF
Functional Block Diagram
VB1
HIN1
Input Noise Filter Input Noise Filter Input Noise Filter Input Noise Filter Input Noise Filter Input Noise Filter
SD
LIN1
Deadtime & Shoot-Through Prevention
HV Level Shifter
SET
Latch UV Detect Driver
HO1 VS1
RESET
HIN2
SD
LIN2
Deadtime & Shoot-Through Prevention
HV Level Shifter
SET
VB2
Latch UV Detect Driver
HO2 VS2
RESET
HIN3
SD
LIN3
Deadtime & Shoot-Through Prevention
HV Level Shifter
SET
VB3
Latch UV Detect Driver
HO3 VS3 VCC
RESET
UV Detect Delay Driver
LO1
Delay
Driver
LO2
Delay
Driver
LO3 COM
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IRS2334SPbF/MPbF
Input/Output Pin Equivalent Circuit Diagrams
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IRS2334SPbF/MPbF
Lead Definitions
Symbol VCC VB1 VB2 VB3 VS1 VS2 VS3 HIN1 HIN2 HIN3 LIN1 LIN2 LIN3 HO1 HO2 HO3 LO1 LO2 LO3 COM Description Low side and logic power supply High side floating power supply (phase 1) High side floating power supply (phase 2) High side floating power supply (phase 3) High side floating supply return (phase 1) High side floating supply return (phase 2) High side floating supply return (phase 3) Logic input for high side gate driver output HO1, input is in-phase with output Logic input for high side gate driver output HO2, input is in-phase with output Logic input for high side gate driver output HO3, input is in-phase with output Logic input for low side gate driver output LO1, input is in-phase with output Logic input for low side gate driver output LO2, input is in-phase with output Logic input for low side gate driver output LO3, input is in-phase with output High side gate driver output (phase 1) High side gate driver output (phase 2) High side gate driver output (phase 3) Low side gate driver output (phase 1) Low side gate driver output (phase 2) Low side gate driver output (phase 3) Low side supply return
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IRS2334SPbF/MPbF
Lead Assignments
20 leads wide body SOIC
32 leads MLPQ 5x5 without 4 leads
HO2 HO3 26 HS3 25 24 23 22 21 20 HIN1 HIN2 HIN3 6 7 8 10 11 12 13 14 15 16 9 19 18 17 VCC LO1 LO2 LO3 VB2 VS2 VB3 27
32
VS1 HO1 VB1
1 2 3
30
31
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COM
LIN1
LIN2
LIN3
IRS2334SPbF/MPbF
Application Information and Additional Details
IGBT/MOSFET Gate Drive Switching and Timing Relationships Deadtime Matched Propagation Delays Input Logic Compatibility Shoot-Through Protection Under-Voltage Lockout Protection Truth Table: Under-Voltage lockout Advanced Input Filter Short-Pulse and Noise Rejection Tolerant to Negative VS Transients PCB Layout Tips Additional Documentation
IGBT/MOSFET Gate Drive The IRS2334 HVIC is designed to drive high side and low side MOSFET or IGBT power devices. Figures 1 and 2 show the definition of some of the relevant parameters associated with the gate driver output functionality. The output current that drives the gate of the external power switches is defined as IO. The output voltage that drives the gate of the external power switches is defined as VHO for the high side and VLO for the low side; this parameter is sometimes generically called VOUT and in this case the high side and low side output voltages are not differentiated.
VB (or VCC)
VB (or VCC)
IO+
H (or LO) + H (or LO)
VH (or VL )
(or VS ) (or VS )
IO -
Figure 1: HVIC sourcing current
Figure 2: HVIC sinking current
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IRS2334SPbF/MPbF
Switching and Timing Relationships The relationship between the input and output signals of the IRS2334 HVIC is shown in Figure 3. The definitions of some of the relevant parameters associated with the gate driver input to output transmission are given.
LIN or HIN
50% PWIN
50%
t ON
tR 90% 10%
PWOUT
tOFF 90%
tF
LO or HO
10%
Figure 3: Switching time waveforms During interval A of Figure 4 the HVIC receives the command to turn on both the high and low side switches at the same time; correspondingly, the shoot-through protection prevents the high and low side signals HO and LO turn on by keeping them low.
Figure 4: Input/output timing diagram
Deadtime The IRS2334 HVIC provides an integrated deadtime protection circuitry. The deadtime interval for this HVIC is fixed; while other ICs within IR’s HVIC portfolio feature programmable deadtime for greater design flexibility. The deadtime feature inserts a time interval in which both the gate driver outputs LO and HO are held off; to ensure that the power switch being turned off has fully turned off before the second power switch is turned on. This minimum deadtime is automatically inserted whenever the external deadtime commanded by the host microcontroller is shorter than DT, while external deadtimes larger than DT are not modified by the gate driver. Figure 7 illustrates the deadtime interval definition and the relationship between the output gate signals.
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IRS2334SPbF/MPbF
The deadtime interval introduced is matched with respect to the commutation from HIN turning off to LIN turning on, and viceversa. Figure 5 defines the two deadtime parameters DT1 and DT2. The deadtime matching parameter MDT is defined as the maximum difference between DT1 and DT2.
LIN
HIN
50% LO HO 50% DT1
50% DT2 50%
Figure 5: Deadtime definition
Matched Propagation Delays The IRS2334 HVIC is designed for propagation delay matching. With this feature, the input to output propagation delays tON, tOFF are the same for the low side and the high side channels; the maximum difference being specified by the delay matching parameter MT as defined in Figure 6.
Figure 6: Delay Matching Waveform Definition
Input Logic Compatibility The IRS2334 HVIC is designed with inputs compatible with standard CMOS and TTL outputs with 3.3 V and 5 V logic level signals. Figure 7 shows how an input signal is logically interpreted.
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IRS2334SPbF/MPbF
Figure 7: HIN & LIN input thresholds
Shoot-Through Protection The IRS2334 is equipped with a shoot-through protection circuitry which prevents cross-conduction of the power switches. Table 1 shows the input to output relationship in the form of a truth table. Note that the HVIC has noninverting inputs (the output is in-phase with the respective input). HIN 0 0 1 1 LIN 0 1 0 1 HO 0 0 1 0 LO 0 1 0 0
Table 1: Input/output truth table
Under-Voltage Lockout Protection The IRS2334 HVIC provides under-voltage lockout protection on both the VCC low side and logic fixed power supply and the VBS high side floating power supply. Figure 8 illustrates this concept by considering the VCC (or VBS) plotted over time: as the waveform crosses the UVLO threshold, the under-voltage protection is entered or exited. Upon power up, should the VCC voltage fail to reach the VCCUV+ threshold, the gate driver outputs LO and HO will remain disabled. Additionally, if the VCC voltage decreases below the VCCUV- threshold during normal operation, the under-voltage lockout circuitry will shutdown the gate driver outputs LO and HO. Upon power up, should the VBS voltage fail to reach the VBSUV threshold, the gate driver output HO will remain disabled. Additionally, if the VBS voltage decreases below the VBSUV threshold during normal operation, the undervoltage lockout circuitry will shutdown the high side gate driver output HO. The UVLO protection ensures that the HVIC drives external power devices only with a gate supply voltage sufficient to fully enhance them. Without this protection, the gates of the external power switches could be driven
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IRS2334SPbF/MPbF
with a low voltage, which would result in power switches conducting current while with a high channel impedance, which would produce very high conduction losses possibly leading to power device failure.
VCC (or B ) V CCU + (or BSU + )
VCCU (or BSU - )
Time UVLO Protection (Gate Driver Outputs Disabled ) Norma Operation Norma Operation
Figure 8: UVLO protection
Truth Table: Under-Voltage lockout Table 2 provides the truth table for the IRS2334 HVIC. The 1st line shows that for VCC below the UVLO threshold both the gate driver outputs LO and HO are disabled. After VCC returns above VCCUV, the gate driver outputs return functional. The 2nd line shows that for VBS below the UVLO threshold, the gate driver output HO is disabled. After VBS returns above VBSUV, HO remains low until a new rising transition of HIN is received. The last line shows the normal operation of the HVIC.
VCC UVLO VCC UVLO VBS Normal operation