JANTX2N6849

PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849  HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9130 -100V 0.30Ω ID -6.5A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.  TO-39 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -6.5 -4.1 -25 25 0.20 ±20 92 — — -5.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 04/20/01 IRFF9130 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min -100 — — — -2.0 2.5 — — — — 14.7 1.0 2.0 — — — — — Typ Max Units — -0.10 — — — — — — — — — — — — — — — 7.0 — — 0.30 0.345 -4.0 — -25 -250 -100 100 34.8 7.1 21 60 140 140 140 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -4.1A ➃ VGS =-10V, ID =-6.5A ➃ VDS = VGS, ID = -250µA VDS > -15V, IDS = -4.1A ➃ VDS= -80V, VGS=0V VDS = -80V VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-10V, ID = -6.5A VDS= -50V VDD = -50V, ID = -6.5A, VGS =-10V,RG =7.5Ω IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 800 350 125 — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -6.5 -25 -4.7 250 3.0 Test Conditions A V nS µC Tj = 25°C, IS =-6.5A, VGS = 0V ➃ Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 5.0 175 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFF9130 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs.Temperature www.irf.com 3 IRFF9130 13 a& 13 a& bb Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFF9130 V DS VGS RG RD D.U.T. + VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% 90% Fig 9. Maximum Drain Current Vs. CaseTemperature VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - V DD 5 IRFF9130 VDS L RG D .U .T IA S VD D A D R IV E R -20V VGS tp 0.0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF -10V QGS VG QGD VGS .3µF -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRFF9130 Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, Peak IL = -6.5A, VGS = -10V VDD≤ -100V, TJ ≤ 150°C Suggested RG = 7.5 Ω ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➂ ISD ≤ -6.5A, di/dt ≤ -140A/µs, Case Outline and Dimensions —TO-205AF LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01 www.irf.com 7