JANTX2N7236U

PD - 91553F POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number IRFN9140 RDS(on) 0.20Ω ID -18A IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY ® HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. SMD-1 Features: n n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Surface Mount Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page -18 -11 -72 125 1.0 ±20 500 -18 12.5 -5.0 -55 to 150 300 (for 5 S) 2.6(typical) Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 09/22/03 IRFN9140 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -100 — — — -2.0 6.2 — — — — — — — — — — — — Typ Max Units — -0.087 — — — — — — — — — — — — — — — 4.0 — — 0.20 0.22 -4.0 — -25 -250 -100 100 60 13 35.2 35 85 85 65 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -11A➃ VGS = -10V, ID = -18A ➃ VDS = VGS, ID = -250µA VDS > -15V, IDS = -11A➃ VDS= -80V, VGS= 0V VDS = -80V VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -10V, ID= -18A VDS = -50V VDD = -50V, ID = -18A RG = 9.1Ω, VGS = -10V IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1400 600 200 — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -18 -72 -5.0 280 3.6 Test Conditions A V nS µc Tj = 25°C, IS = -18A, VGS = 0V ➃ Tj = 25°C, IF = -18A, di/dt ≤-100A/µs VDD ≤ -30V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction to Case Junction to PC Board Min Typ Max — — — 4.0 1.0 — Units °C/W Test Conditions Soldered to a copper-clad PC board Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRFN9140 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFN9140 13a & b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFN9140 V DS VGS RG RD D.U.T. + VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - V DD 5 IRFN9140 VDS L RG D .U .T IA S tp 0 .0 1 Ω VD D A D R IV E R VGS -2 0 V 15V Fig 12a. Unclamped Inductive Test Circuit IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V ( BR ) DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -10V 12V .2µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + QGS QGD D.U.T. - -10V .3µF VDS IRFN9140 Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD =-25V, starting TJ = 25°C, L = 3.1mH Peak IL = -18A, VGS = -10V ➂ ISD ≤ -18A, di/dt ≤ −100A/ µs, VDD≤ -100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS 1- DRAIN 2- GATE 3- SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/03 www.irf.com 7