RDHA701FP10A8CK

PD-95878C Radiation Hardended, Octal, Buffered and Non-Buffered, Solid State Relays Product Summary Part Number RDHA701FP10A8CK RDHA701FP10A8QK RDHA701FP10A8CK RDHA701FP10A8QK Octal, 100V, 1.5A tr / tf Fast Voltage 100V 100V Current 1.5A 1.5A Buffer None 5.0V Controlled 64-PIN FLAT PACK Description The RDHA701FP10A8CK, RDHA701FP10A8QK are a family of radiation hardened, octal, single-pole, normally open, buffered and non-buffered solid state relays. These devices are actuated by an input voltage or current, depending on model, and have been characterized for 100 krad(Si) total dose. These parts are useful for applications requiring a compact, hermetic device. Features: n Total Dose Capability to 100krad(Si) n Optically Coupled n Buffered Input Stage (RDHA701FP10A8QK) n Input Current Actuated (RDHA701FP10A8CK) n 1000VDC Input to Output Isolation n Hermetically Sealed Package Absolute Maximum Ratings per Channel @ Tj=25°C (unless otherwise specified) Output Maximum Voltage Output Current fg g Parameter Symbol VS IO VIN IIN VDD IDD IDD pk PDISS TJ TS TL Value 100 1.5 ±10 ±10 10 30 100 5.5 -55 to +125 -65 to +150 300 Units V A V mA V mA W °C Input Buffer Voltage - RDHA701FP10A8QK Input Buffer Current - RDHA701FP10A8QK Input Supply Voltage (Optocoupler) - RDHA701FP10A8QK i Input Supply Current - RDHA701FP10A8CK / RDHA701FP10A8QK Peak Input Supply Current (t ≤1.0ms) - RDHA701FP10A8CK Power Dissipation Operating Temperature Range Storage Temperature Range Lead Temperature For notes, please refer to page 4 www.irf.com 1 03/29/06 RDHA701FP10A8CK, RDHA701FP10A8QK RDHA701FP10A8CK General Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified) Parameter Input Supply Current Input Voltage Drop Input-to-Output Leakage Current Output Capacitance Group A Subgroups Test Conditions IO = 1.0A Symbol Min. Typ. Max. Units IDD VL II-O COSS RTHJC -1.2 1.4 1.0 ---48 10 ----145 --25 1.6 2.2 1.4 1.0 -18 -µA pF °C/W MHrs V mA c 1 2 3 1 VI-O = 1.0KVdc, dwell = 5.0s VIN = 0.8V, f = 1.0MHz, VS = 25V TC = 25°C IDD = 10mA IIN = 10mA c Thermal Resistancec MTBF (Per Channel) c MIL-HDBK-217F, SF@Tc= 25°C RDHA701FP10A8QK General Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified) Parameter Input Buffer Threshold Voltage , Input Supply Current Group A Test Conditions Symbol Min. Typ. Max. Units VIN(TH) 4.5 -----24.6 -10 --145 ---15 25 1.0 -18 -V mA µA pF °C/W MHrs c ce Subgroups VDD = 5.0V, IO = 1.0A VDD = 10V, IO = 1.0A 1 i cf IDD II-O COSS RTHJC Input-to-Output Leakage Current VI-O = 1.0KVdc, dwell = 5.0s VIN = 0.8V, f = 1.0MHz, VS = 25V TC = 25°C VIN = 5.0V, VDD = 5.0V , MIL-HDBK-217F, SF@Tc= 25°C c Thermal Resistancec Output Capacitance MTBF (Per Channel) For notes, please refer to page 5 2 www.irf.com RDHA701FP10A8CK, RDHA701FP10A8QK Pre-Irradiation RDHA701FP10A8CK Electrical Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified) Parameter Group A Subgroups Output On-Resistance Output Leakage Current Turn-On Delay Turn-Off Delay Rise Time , Fall Time , 1 2 1 2 1,2,3 1,2,3 1,2,3 1,2,3 IDD = 10mA, IO = 1.0A V IN = 0.8V, VS = 100V V IN = 0.8V, VS = 80V IDD = 10mA, VS = 28V, D = 2.0% RC = 41Ω/100µ F, PW = 50ms V S = 28V, D = 2.0% RC = 41Ω/100µ F, PW = 50ms IDD = 10mA, VS = 28V, D = 2.0% RC = 41Ω/100µ F, PW = 50ms V S = 28V, D = 2.0% RC = 41Ω/100µ F, PW = 50ms RDS(ON) IO ton toff tr tf --------0.24 0.45 --0.6 3.5 0.5 7.2 0.35 0.75 10 25 2.5 7.0 ms 2.0 9.5 Ω µA Test Conditions Symbol Min. Typ. Max. Units h h dh dh Pre-Irradiation RDHA701FP10A8QK Electrical Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified) Parameter Group A Subgroups Output On-Resistance Output Leakage Current Input Buffer Current Turn-On Delay 1 2 1 2 1 2,3 1,2,3 1,2,3 1,2,3 1,2,3 IDD = 10mA, IO= 1.0A VIN = 0.8V, VS = 100V VIN = 0.8V, VS = 80V VIN = 5.0V IDD = 10mA, VS = 28V, D = 2.0% RC = 41Ω/100µF, PW = 50ms VS = 28V, D = 2.0% RC = 41Ω/100µF, PW = 50ms IDD = 10mA, V+ = 28V, D = 2.0% RC = 41Ω/100µF, PW = 50ms VS = 28V, D = 2.0% RC = 41Ω/100µF, PW = 50ms RDS(ON) IO IIN ton toff tr tf ----------0.24 0.45 ----4.5 35 1.1 11 0.35 0.75 10 25 1.0 3.0 15 60 ms 3.0 15 Ω µA µA Test Conditions Symbol Min. Typ. Max. Units h h Turn-Off Delay Rise Time , Fall Time , dh dh For notes, please refer to page 5 www.irf.com 3 RDHA701FP10A8CK, RDHA701FP10A8QK Post Total Dose Irradiation ˆ,‰,Š RDHA701FP10A8CK Electrical Characteristics per Channel @ 25°C (Unless Otherwise Specified) Parameter Output On-Resistance Output Leakage Current Turn-On Delay Group A Subgroups 1 1 1 1 1 1 Test Conditions IDD = 10mA, IO= 1.0A VIN = 0.8V, VS = 100V IDD = 10mA, VS = 28V, D = 2.0% RC = 41Ω /100µF, PW = 50ms VS = 28V, D = 2.0% RC = 41Ω /100µF, PW = 50ms IDD = 10mA, VS = 28V, D = 2.0% RC = 41Ω /100µF, PW = 50ms VS = 28V, D = 2.0% RC = 41Ω /100µF, PW = 50ms Symbol Min. Typ. Max. Units RDS(ON) IO ton toff tr tf ------0.24 -0.6 3.5 0.5 7.2 0.35 10 2.5 7.0 ms 2.0 9.5 Ω µA h h Turn-Off Delay Rise Time , Fall Time , dh dh Post Total Dose Irradiation ˆ,‰,Š RDHA701FP10A8QK Electrical Characteristics per Channel @ 25°C (Unless Otherwise Specified) Parameter Output On-Resistance Output Leakage Current Input Buffer Current Turn-On Delay Group A Subgroups 1 1 1 1 1 1 1 Test Conditions IDD = 10mA, IO= 1.0A VIN = 0.8V, VS = 100V VIN = 5.0V IDD = 10mA, VS = 28V, D = 2.0% RC = 41Ω /100µF, PW = 50ms VS = 28V, D = 2.0% RC = 41Ω /100µF, PW = 50ms IDD = 10mA, VS = 28V, D = 2.0% RC = 41Ω /100µF, PW = 50ms VS = 28V, D = 2.0% RC = 41Ω /100µF, PW = 50ms Symbol Min. Typ. Max. Units RDS(ON) IO IIN ton toff tr tf -------0.24 --4.5 35 1.1 11 0.35 10 1.0 15 60 ms 3.0 15 Ω µA h h Turn-Off Delay Rise Time , Fall Time , dh dh For notes, please refer to page 5 4 www.irf.com RDHA701FP10A8CK, RDHA701FP10A8QK Notes for Maximum Ratings, General and Electrical Characteristic Tables  ‚ ƒ m Specification is guaranteed by design Rise and fall times are controlled internally Inputs protected for VIN< 1.0V and VIN > 7.5V Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to insure that transient currents do not cause a violation of SOA. If transient conditions are present, IR recommends a complete simulation to be performed by the end user to ensure compliance with SOA requirements as specified in the IRHQ57110 data sheet While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for product derating, as applicable for the application Reference Figures 2, 3 & 4 for Switching Test Circuits and Wave Form Input Supply voltage for RDHA701FP10A8QK shall not exceed 5.25V@Tc ≥ 70°C Total Dose Irradiation with Input Bias. 10mA IDD applied and VDS = 0 during Irradiation Total Dose Irradiation with Output Bias. 80 Volts VDS applied and IDD = 0 during Irradiation International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program n o ‡ ˆ ‰ Š 1.60 1.40 1.20 ID, Drain Current (A) 1.00 0.80 0.60 0.40 0.20 0.00 25 50 75 100 125 150 TC, Case Temperature (°C) Fig 1: Maximum Drain Current Vs Case Temperature www.irf.com 5 RDHA701FP10A8CK, RDHA701FP10A8QK Schematic Notes 1. Buffered Input stages on RDHA701FP10A8QK only 2. Input Current Actuation (*) on RDHA701FP10A8CK only 6 www.irf.com RDHA701FP10A8CK, RDHA701FP10A8QK 100 µF uF Fig 2: Switching Test Circuit for RDHA701FP10A8CK only 100 µFuF Fig 3: Switching Test Circuit for RDHA701FP10A8QK only www.irf.com 7 RDHA701FP10A8CK, RDHA701FP10A8QK Fig 4: Switching Test Waveform Radiation Performance International Rectifier Radiation Hardened SSRs are tested to verify their hardness capability. The hardness assurance program at IR uses a Cobalt-60 (60Co) source and heavy ion irradiation. Both pre- and postirradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparison. 8 www.irf.com RDHA701FP10A8CK, RDHA701FP10A8QK Pin Designation - RDHA701FP10A8CK Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Designation Current IN 1 N/C N/C Current OUT 1 Current IN 2 N/C N/C Current OUT 2 Current IN 3 N/C N/C Current OUT 3 Current IN 4 N/C N/C Current OUT 4 Pin No. 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Designation Current IN 5 N/C N/C Current OUT 5 Current IN 6 N/C N/C Current OUT 6 Current IN 7 N/C N/C Current OUT 7 Current IN 8 N/C Case ground Current OUT 8 Pin No. 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Designation Drain 8 Drain 8 Source 8 Source 8 Drain 7 Drain 7 Source 7 Source 7 Drain 6 Drain 6 Source 6 Source 6 Drain 5 Drain 5 Source 5 Source 5 Pin No. Designation 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 Drain 4 Drain 4 Source 4 Source 4 Drain 3 Drain 3 Source 3 Source 3 Drain 2 Drain 2 Source 2 Source 2 Drain 1 Drain 1 Source 1 Source 1 c Pin Designation - RDHA701FP10A8QK Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Designation +5V 1 IN 1 N/C 5V RTN 1 +5V 2 IN 2 N/C 5V RTN 2 + 5V 3 IN 3 N/C 5V RTN 3 + 5V 4 IN 4 N/C 5V RTN 4 Pin No. 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Designation + 5V 5 IN 5 N/C 5V RTN 5 + 5V 6 IN 6 N/C 5V RTN 6 + 5V 7 IN 7 N/C 5V RTN 7 + 5V 8 IN 8 Case ground 5V RTN 8 Pin No. 33 34 35 36 37 38 39 40 41 42 43 44 45 Designation Drain 8 Drain 8 Source 8 Source 8 Drain 7 Drain 7 Source 7 Source 7 Drain 6 Drain 6 Source 6 Source 6 Drain 5 Drain 5 Source 5 Source 5 Pin No. Designation 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 Drain 4 Drain 4 Source 4 Source 4 Drain 3 Drain 3 Source 3 Source 3 Drain 2 Drain 2 Source 2 Source 2 Drain 1 Drain 1 Source 1 Source 1 c cÃCase ground is for EMI shielding purposes only. It does not have to be connected for proper relay operation www.irf.com 46 47 48 9 RDHA701FP10A8CK, RDHA701FP10A8QK Case Outline and Dimensions — 64-Pin Flat Pak Package Notes 1. 2. 3. 4. Dimensioning and Tolerancing per ASME Y14.5SM-1994 Controlling Dimension: Inch Dimensions are shown in inches Tolerances are +/- 0.005 UOS Part Numbering Nomenclature RD H A 7 01 FP Device Type RD = DC Solid State Relay 10 A 8 C/Q K Screening Level K = Class K per MIL-PRF-38534 Radiation Characterization H = RAD Hard Features C = Non Buffered Compromise Q = 5.0 Volt Buffered Controlled Generation A = Current Design Radiation Level 7 = 100K Rad (Si) Poles 8 = 8 Poles Current 01 = 1.0A Throw Configuration A = Single Throw, Normally Open Package FP = 64-Pin Flat Pack Volts 10 = 100 Volts 10 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2006 www.irf.com