RDHA710SE10A2FK

PD-96983 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary Part Number RDHA710SE10A2FK RDHA710SE10A2FK Dual, 100V, 10A Breakdown Voltage 100V g Current 10A tr / tf Fast Logic Drive Voltage 3.3V 8-PIN SURFACE MOUNT Description The RDHA710SE10A2FK is a radiation hardened dual solid-state relay in a hermetic package. It is configured as a dual, single-pole-single-throw (SPST) normally open relay with common input supply. This device is characterized for 100 krad(Si) total ionizing dose and neutron fluence level of 1.8E12 n/cm2. The input and output MOSFETs utilize International Rectifier’s R5 technology. T h e RDHA710SE10A2FK is optically coupled and actuated by standard logic inputs. Features: n n n n n n n n Total Dose Capability to 100 krad(Si) Neutron Fluence Level of 1.8E12 n/cm2 Optically Coupled 1000VDC Input to Output Isolation Buffered Input Stage 3.3V Compatible Logic Level Input Controlled Switching Times Hermetically Sealed Package Absolute Maximum Ratings per Channel @ Tj=25°C (unless otherwise specified) Output Maximum Voltage Output Current fg g ià Parameter Symbol VS IO VIN IIN VDD IDD PDISS TJ TS TL Value 100 12 ±7.5 ±10 5.25 25 60 -55 to +125 -65 to +150 300 Units V A V mA V mA W °C Input Buffer Voltage - (pins 4 & 6) Input Buffer Current Input Supply Current ià Power Dissipation fg Input Supply Voltage (pin 5) e Operating Temperature Range Storage Temperature Range Lead Temperature For notes, please refer to page 3 www.irf.com 1 03/29/06 RDHA710SE10A2FK General Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified) Parameter Input Buffer Threshold Voltage Group A Test Conditions VDD = 5.0V, IO= 10A Symbol Min. Typ. Max. Units VIN(TH) II-O COSS RTHJC 3.0 ---6.0 --365 ---1.0 -1.7 -V µA pF °C/W MHrs ce Subgroups 1 VI-O = 1.0KVdc, dwell = 5.0s VIN = 0.1V, f = 1.0MHz, VS =25V TC = 25°C VIN = 3.3V, VDD = 5.0V Input-to-Output Leakage Current c Thermal Resistancec Output Capacitance MTBF (Per Channel) c,f MIL-HDBK-217F, SF@Tc= 25°C Pre-Irradiation Electrical Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified) Parameter Group A Subgroups Output On-Resistance Output Leakage Current Input Supply Current Input Buffer Current Turn-On Delay 1 2 1 2 1,2,3 1 2,3 1,2,3 1,2,3 1,2,3 1,2,3 VIN = 3.3V VDD = 5.0V, IO= 10A VIN = 0.1V, VS = 100V VIN = 0.1V, VS = 80V VDD = 5.0V, IO= 10A VIN = 3.3V VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms RDS(ON) IO IDD IIN ton toff tr tf Test Conditions Symbol Min. Typ. Max. Units -----------0.070 0.100 0.125 0.165 --18 --0.18 0.50 0.25 1.50 25 250 25 1.0 3.0 0.45 0.75 ms 0.40 1.80 Ω µA mA µA h h Turn-Off Delay Rise Time , Fall Time , dh dh For notes, please refer to page 3 2 www.irf.com RDHA710SE10A2FK Post Total Dose Irradiation ‡,ˆ,‰ Electrical Characteristics per Channel @ 25°C (Unless Otherwise Specified) Parameter Output On-Resistance Input Supply Current Output Leakage Current Input Buffer Current Turn-On Delay Group A Subgroups 1 1 1 1 1 1 1 1 Test Conditions VIN = 3.3V, VDD = 5.0V, IO= 10A VDD = 5.0V, IO= 10A VIN = 0.1V, VS = 100V VIN = 3.3V VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0Ω/100µF, PW = 50ms Symbol Min. Typ. Max. Units RDS(ON) IDD IO IIN ton toff tr tf --------- 0.070 0.100 18 --0.18 0.50 0.25 1.50 25 25 1.0 0.45 0.75 Ω mA µA h h Turn-Off Delay Rise Time Fall Time dh ms 0.40 1.80 dh Notes for Maximum Ratings and Electrical Characteristic Tables  ‚ ƒ m Specification is guaranteed by design Rise and fall times are controlled internally Inputs protected for VIN< 1.0V and VIN > 7.5V Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to insure that transient currents do not cause violation of SOA. If transient conditions are present, IR recommends a complete simulation to be performed by the end user to insure compliance with SOA requirements as specified in the IRHNJ57130 data sheet While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for product derating, as required for the application Reference Figures 3 & 4 for Switching Test Circuits and Wave Form Total Dose Irradiation with Input Bias. 10mA IDD applied and VDS = 0 during Irradiation Total Dose Irradiation with Output Bias. 80 Volts VDS applied and IDD = 0 during Irradiation International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program n o ‡ ˆ ‰ www.irf.com 3 RDHA710SE10A2FK 25 20 ID, Drain Current (A) 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig 1: Maximum Drain Current Vs Case Temperature per Channel Pin 1 - OUT 1+ Pin 4 - INPUT 1 O pto Isolation Pin 3 - GND Pin 5 - VDD Pin 6 - INPUT 2 O pto Isolation Pin 2 - OUT 1Pin 8 - OUT 2+ Pin 7 - OUT 2- Fig 2: Typical Application Radiation Performance International Rectifier Radiation Hardened Solid State Relays are tested to verify their hardness capability. The hardness assurance program at IR uses a Cobalt-60 (60Co) Source and heavy ion irradiation. Both preand post- irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparision. 4 www.irf.com RDHA710SE10A2FK uF 100 µF Fig 3: Switching Test Circuit (Only one channel shown) Fig 4: Switching Test Waveform www.irf.com 5 RDHA710SE10A2FK Case Outline and Dimensions — 8-Pin Surface Mount Package Pin Assignment Pin # 1 2 3 4 5 6 7 8 Pin Description OUT 1 + OUT 1 INPUT GND INPUT 1 VDD INPUT 2 OUT 2 OUT 2 + Notes 1. 2. 3. 4. Dimensioning and Tolerancing per ASME Y14.5SM-1994 Controlling Dimension: Inch Dimensions are shown in inches Tolerances are +/- 0.005 UOS Part Numbering Nomenclature Device Type RD = DC Solid State Relay RD H A 7 10 SE 10 A 2 F K Screening Level K = Class K per MIL-PRF-38534 Radiation Characterization H = RAD Hard Features F = 3.3 Volt Buffered Fast Generation A = Current Design Poles 2 = Double Pole Radiation Level 7 = 100K Rad (Si) Current 10 = 10A Throw Configuration A = Single Throw, Normally Open Package SE = 8-Pin Surface Mount Volts 10 = 100 Volts 6 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Data and specifications subject to change without notice. 03/2006 www.irf.com