RHLG77110

PD-97178 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω ID 1.8A 1.8A 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL TECHNOLOGY ™ MO-036AB International Rectifier’s R7TM L ogic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 1.8 1.1 7.2 1.4 0.01 ±10 97 1.8 0.14 11 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns oC 300 (0.063in/1.6mm from case for 10s) 1.3 (Typical) g www.irf.com 1 03/20/08 IRHLG77110, 2N7612M1 Pre-Irradiation Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — 1.0 — 3.0 — — — — — — — — — — — — Typ Max Units — 0.11 — — -4.4 — — — — — — — — — — — — 10 — — 0.22 2.0 — — 1.0 10 100 -100 15 2.5 6.0 15 20 65 25 — V V/°C Ω V mV/°C S µA nA nC Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 1.1A VDS = VGS, ID = 250µA VDS = 10V, IDS = 1.1A à VDS= 80V ,VGS= 0V VDS = 80V, VGS = 0V, TJ =125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 1.8A VDS = 50V VDD = 50V, ID = 1.8A, VGS = 4.5V, RG = 7.5Ω à IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance ns nH Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad C iss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance — — — — 653 119 2.7 16 — — — — pF Ω VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics (Per Die) Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 1.8 7.2 1.2 100 223 Test Conditions A V ns nC Tj = 25°C, IS = 1.8A, VGS = 0V à Tj = 25°C, IF = 1.8A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 90 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLG77110, 2N7612M1 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die) Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source „ On-State Resistance (TO-39) Static Drain-to-Source On-state „ Resistance (MO-036AB) Diode Forward Voltage „ Up to 300K Rads (Si)1 Min 100 1.0 — — — — — — Max Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10V VDS= 80V, VGS=0V VGS = 4.5V, ID = 1.1A VGS = 4.5V, ID = 1.1A VGS = 0V, ID = 1.8A — 2.0 100 -100 10 0.25 0.22 1.2 1. Part numbers IRHLG77110, IRHLG73110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) Ion LET (MeV/(mg/cm2)) Br I Au 37 60 84 Energy (MeV) 305 370 390 Range (µm) 39 34 30 0V 100 100 100 -1V 100 100 100 -2V 100 100 100 -4V 100 100 100 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= -5V 100 100 100 -6V 100 100 - -7V 100 - -8V 100 - 120 100 80 60 40 20 0 0 -1 -2 -3 -4 VGS -5 -6 -7 -8 Br I Au Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com VDS 3 IRHLG77110, 2N7612M1 Pre-Irradiation 10 VGS TOP 10V 5.0V 4.5V 3.0V 2.75V 2.5V 2.25V BOTTOM 2.0V 10 VGS 10V 5.0V 4.5V 3.0V 2.75V 2.5V 2.25V BOTTOM 2.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 2.0V 1 1 2.0V 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 T J = 150°C ID, Drain-to-Source Current (A) 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 1.8A 2.0 T J = 25°C 1 1.5 1.0 0.5 0.1 2 2.2 2.4 VDS = 50V 15 60µs PULSE WIDTH 2.6 2.8 3 VGS = 4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLG77110, 2N7612M1 ID = 1.8A 0.4 RDS(on), Drain-to -Source On Resistance ( Ω) RDS(on), Drain-to -Source On Resistance (Ω) 0.5 0.4 0.35 T J = 150°C 0.3 0.25 0.2 0.15 Vgs = 4.5V 0.1 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 ID, Drain Current (A) T J = 25°C 0.3 T J = 150°C 0.2 T J = 25°C 0.1 0 1 2 3 4 5 6 7 8 9 10 11 VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 130 2.5 VGS(th) Gate threshold Voltage (V) ID = 1.0mA 2.0 120 1.5 1.0 110 0.5 ID = 50µA ID = 250µA ID = 1.0mA ID = 150mA 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5 IRHLG77110, 2N7612M1 Pre-Irradiation 1600 1400 1200 C oss = C ds + C gd VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd 12 ID = 1.8A 10 8 6 4 2 0 VDS = 80V VDS = 50V VDS = 20V C, Capacitance (pF) 1000 800 600 400 200 0 1 10 100 Ciss Coss Crss FOR TEST CIRCUIT SEE FIGURE 17 0 4 8 12 16 20 24 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 10 2 ISD, Reverse Drain Current (A) 1 T J = 150°C ID, Drain Current (A) 1.4 1.6 1.5 1 0.1 T J = 25°C 0.5 VGS = 0V 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Typical Source-to-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature 6 www.irf.com Pre-Irradiation IRHLG77110, 2N7612M1 100 EAS , Single Pulse Avalanche Energy (mJ) 240 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 200 TOP BOTTOM ID 0.8A 1.1A 1.8A 160 120 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 1ms 80 10ms 40 0.1 0 100 1000 25 50 75 100 125 150 VDS , Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response ( Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 1 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 7 IRHLG77110, 2N7612M1 Pre-Irradiation V(BR)DSS 15V tp VDS L DRIVER RG VGS 20V . D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. Fig 16a. Unclamped Inductive Test Circuit 4.5V QG 12V 50KΩ .2µF .3µF QGS VG QGD VGS 3mA D.U.T. + V - DS Charge Fig 17a. Basic Gate Charge Waveform VDS V GS RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % IG ID Current Sampling Resistors Fig 17b. Gate Charge Test Circuit VDS 90% RD D.U.T. VDD + - 10% VGS td(on) tr t d(off) tf Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 www.irf.com Pre-Irradiation IRHLG77110, 2N7612M1 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 6.6mH Peak IL = 1.8A, VGS = 10V  ISD ≤ 1.8A, di/dt ≤ 497A/µs, VDD ≤ 100V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — MO-036AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2008 www.irf.com 9