SI3443DV

PD- 93795B Si3443DV HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D 1 6 A D VDSS = -20V D 2 5 D G 3 4 S RDS(on) = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -4.4 -3.5 -20 2.0 1.3 0.016 31 ± 12 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 62.5 Units °C/W www.irf.com 1 01/13/03 Si3443DV Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 ––– ––– ––– ––– -0.60 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = -250µA -0.005 ––– V/°C Reference to 25°C, ID = -1mA 0.034 0.065 VGS = -4.5V, I D = -4.4A ‚ 0.053 0.090 Ω VGS = -2.7V, I D = -3.7A ‚ 0.060 0.100 VGS = -2.5V, I D = -3.5A ‚ ––– -1.2 V VDS = VGS, ID = -250µA 12 ––– S VDS = -10V, ID = -4.4 A ––– -1.0 VDS = -20V, VGS = 0V µA ––– -5.0 VDS = -20V, VGS = 0V, TJ = 70°C ––– -100 VGS = -12V nA ––– 100 VGS = 12V 11 15 ID = -4.4A 2.2 ––– nC VDS = -10V 2.9 ––– VGS = -4.5V ‚ 12 50 VDD = -10V, VGS = -4.5V ‚ 33 60 ID = -1.0A ns 70 100 RG = 6.0 Ω 72 100 RD = 10 Ω, ‚ 1079 ––– VGS = 0V 220 ––– pF VDS = -10V 152 ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 51 30 -2.0 A -20 -1.2 77 44 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.7A, VGS = 0V TJ = 25°C, I F = -1.7A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t ≤ 5sec. „ Starting TJ = 25°C, L = 6.8mH RG = 25Ω, IAS = -3.0A. ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com Si3443DV 100 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 10 1 1 -1.50V -1.50V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 ° C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -5.6A -I D , Drain-to-Source Current (A) 1.5 TJ = 150 ° C 1.0 1 0.5 0.1 1.5 V DS = -15V 20µs PULSE WIDTH 2.0 2.5 3.0 3.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 Si3443DV 1600 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = -4.5A 12 C, Capacitance (pF) 1200 Ciss VDS = -10V 9 800 6 400 Coss Crss 0 1 10 100 3 0 0 4 8 12 16 20 24 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -ID , Drain Current (A) I 100 10us 10 100us 1ms 1 10ms TJ = 150 ° C TJ = 25 ° C 1 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 0.1 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com Si3443DV 5.0 EAS , Single Pulse Avalanche Energy (mJ) 80 4.0 ID -1.3A -2.4A BOTTOM -3.0A TOP -ID , Drain Current (A) 60 3.0 40 2.0 20 1.0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC , Case Temperature ( °C) Starting TJ , Junction Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 PDM 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 Package Outline TSOP-6 Si3443DV Part Marking Information TSOP-6 @Y6HQG@)ÃUCDTÃDTÃ6IÃTD"##"9W Q6SUÃIVH7@S UPQ X6A@SÃGPU IVH7@SÃ8P9@ 7PUUPH Q6SUÃIVH7@SÃ8P9@ÃS@A@S@I8@) "6Ã2ÃTD"##"9W "7Ã2ÃDSA$' "8Ã2ÃDSA$'$ "9Ã2ÃDSA$'$ "@Ã2ÃDSA$'$! "DÃ2ÃDSA$'$ "EÃ2ÃDSA$'% 96U@Ã8P9@Ã@Y6HQG@T) `XXÃ2Ã(%"Ã2Ã%8 `XXÃ2Ã(%"!Ã2ÃAA 96U@ 8P9@ I‚‡r†)ÃUuv†Ãƒh…‡Ã€h…xvtÃvs‚…€h‡v‚Ãh ƒƒyvr†Ã‡‚Ãqr‰vpr†Ãƒ…‚qˆprqÃirs‚…rÃ!!%! XXÃ2à !%ÃDAÃQS@8@9@9Ã7`ÃG6TUÃ9DBDUÃPAÃ86G@I96SÃ`@6S XPSF `@6S ` X@@F X !  6 !! ! ! 7 !" " " 8 !# # # 9 !$ $ ((% % ((& & ((' ' ((( ( !# Y !  !$ ` !% a XXÃ2Ã!&$!ÃDAÃQS@8@9@9Ã7`Ã6ÃG@UU@S XPSF `@6S ` X@@F X ! 6 !& 6 !! 7 !' 7 !" 8 !( 8 !# 9 " 9 !$ @ ((% A ((& B ((' C ((( E ! F $ Y $ ` I‚‡r†)ÃUuv†Ãƒh…‡Ã€h…xvtÃvs‚…€h‡v‚Ãhƒƒyvr†Ã‡‚Ãqr‰vpr†Ãƒ…‚qˆprqÃhs‡r…Ã!!%! XÃ2à !%ÃDAÃQS@8@9@9Ã7`ÃG6TUÃ9DBDUÃPAÃ86G@I96SÃ`@6S `@6S ! !! !" !# !$ ((% ((& ((' ((( ! ` ! " # $ % & ' (  XPSF X@@F  ! " # X 6 7 8 9 `Ã2Ã`@6S XÃ2ÃX@@F Q6SUÃIVH7@S UPQ GPU 8P9@ !# !$ !% Y ` a Q6SUÃIVH7@SÃ8P9@ÃS@A@S@I8@) 6Ã2ÃTD"##"9W 7Ã2ÃDSA$' 8Ã2ÃDSA$'$ 9Ã2ÃDSA$'$ @Ã2ÃDSA$'$! DÃ2ÃDSA$'$ EÃ2ÃDSA$'% FÃ2ÃDSA$'  GÃ2ÃDSA$'# HÃ2ÃDSA$'" IÃ2ÃDSA$'! XÃ2Ã!&$!ÃDAÃQS@8@9@9Ã7`Ã6ÃG@UU@S `@6S ! !! !" !# !$ ((% ((& ((' ((( ! ` 6 7 8 9 @ A B C E F XPSF X@@F !& !' !( " X 6 7 8 9 $ $ Y ` 6 www.irf.com Si3443DV Tape & Reel Information TSOP-6 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/03 www.irf.com 7