SI4410DY

PD - 91853C Si4410DY HEXFET® Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive S S S G 1 8 7 A A D D D D 2 VDSS = 30V RDS(on) = 0.0135Ω 3 6 4 5 Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C dv/dt EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Peak Diode Recovery dv/dt … Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. 30 ±10 ±8.0 ±50 2.5 1.6 0.02 5.0 400 ± 20 -55 to + 150 Units V A W W/°C V/ns mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 50 Units °C/W www.irf.com 1 11/22/99 Si4410DY Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.029 ––– V/°C Reference to 25°C, ID = 1mA 0.010 0.0135 VGS = 10V, ID = 10A ‚ Ω 0.015 0.020 VGS = 4.5V, ID = 5.0A ‚ ––– ––– V VDS = VGS, ID = 250µA 35 ––– S VDS = 15V, ID = 10A ––– 1.0 VDS = 30V, VGS = 0V µA ––– 25 VDS = 30V, VGS = 0V, TJ = 55°C ––– -100 VGS = -20V nA ––– 100 VGS = 20V 30 45 ID = 10A 5.4 ––– nC VDS = 15V 6.5 ––– VGS = 10V, See Fig. 10 ‚ 11 ––– VDD = 25V 7.7 ––– ID = 1.0A ns 38 ––– RG = 6.0Ω 44 ––– RD = 25Ω, ‚ 1585 ––– VGS = 0V 739 ––– pF VDS = 15V 106 ––– ƒ = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Parameter Continuous Source Current (Diode Conduction)ƒ Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– 0.7 50 2.3 A 50 1.1 80 V ns Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.3A, VGS = 0V ‚ TJ = 25°C, IF = 2.3A D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ Starting TJ = 25°C, L = 8.0mH TJ ≤ 150°C RG = 25Ω, IAS = 10A. (See Figure 15) ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. ƒ When mounted on FR4 Board, t ≤10 sec … ISD ≤2.3A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, 2 www.irf.com Si4410DY 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 4.5V 10 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 10 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = -5 5 ° C TJ = 2 5 ° C TJ = 1 5 0 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) 10A ID = 11A I D , D rain-to -S o u rce C urre n t (A ) 1.5 100 1.0 0.5 10 4 8 V DS = 25V 2 0 µ s P U L S E W ID TH 12 16 A 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 V G S , G a te-to-Sou rce Volta g e (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 Si4410DY 2400 2000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 10A VDS = 24V VDS = 15V 16 C, Capacitance (pF) 1600 Ciss 12 1200 Coss 800 8 400 4 Crss 0 1 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10 TJ = 150 ° C TJ = 25 ° C 1 I D , Drain Current (A) 100 10us 10 100us 1ms 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 1.0 1 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com Si4410DY 10.0 100 8.0 80 I D , Drain Current (A) P ower ( W ) 6.0 60 4.0 40 2.0 20 0.0 25 50 75 100 125 150 0 0.01 A 0.1 1 10 100 TC , Case Temperature ( ° C) T im e (sec ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Power Vs. Time 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 Si4410DY R D S (on ) , Drain-to-S ource On Resistance (Ω) R D S(on ) , D rain-to-S ource O n Resistance (Ω) 0.20 0.03 0.16 0.02 0.12 I D = 1 0A 0.01 0.08 V G S = 1 0V V G S = 4 .5V 0.04 0.00 0 10 20 30 40 50 A 0.00 3 4 5 6 7 8 9 10 A I D , D rain C urren t (A ) V G S , G ate-to- Sou rc e V olta g e ( V ) Fig 12. Typical On-Resistance Vs. Drain Current Fig 13. Typical On-Resistance Vs. Gate Voltage 3.0 1000 EAS , Single Pulse Avalanche Energy (mJ) TOP 800 V G S (th) , V arian ce ( V ) BOTTOM ID 4.5A 8.0A 10A 2.5 600 I D = 2 50µA 2.0 400 200 1.5 -60 -40 -20 0 20 40 60 80 100 120 A 140 160 0 25 50 75 100 125 150 T J , Jun ction T em peratu re ( °C ) Starting TJ , Junction Temperature ( ° C) Fig 14. Typical Threshold Voltage Vs.Temperature Fig 15. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com Si4410DY SO-8 Package Outline D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45° e1 A e e1 H K L θ .050 BASIC .025 BASIC .2284 .011 0.16 0° .2440 .019 .050 8° 0.72 (.028 ) 8X 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0° 6.20 0.48 1.27 8° θ 0.10 (.004) L 8X 6 C 8X -CB 8X 0.25 (.010) NOTES: A1 M CASBS RECOMMENDED FOOTPRINT 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X SO-8 Part Marking Information www.irf.com 7 Si4410DY SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99 8 www.irf.com