T90RIA

Bulletin I27105 rev. B 02/02 T..RIA SERIES MEDIUM POWER PHASE CONTROL THYRISTORS Features Electrically isolated base plate Types up to 1200 V RRM 3500 V RMS i solating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved Power Modules 50 A 70 A 90 A Description These series of T-modules are inteded for general purpose applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. Major Ratings and Characteristics Parameters T50RIA IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz It 2 T70RIA T90RIA 70 70 110 1660 1740 13860 12650 138500 100 to 1200 -40 to 125 90 70 141 1780 1870 15900 14500 159100 Units A o 50 70 80 1310 1370 8550 7800 85500 C A A A A2s A2s A2√s V o @ 50Hz @ 60Hz I2√t VDRM/VRRM TJ C www.irf.com 1 T..RIA Series Bulletin I27105 rev. B 02/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive Code peak reverse voltage peak reverse voltage V V 10 20 T50RIA T70RIA T90RIA 40 60 80 100 120 100 200 400 600 800 1000 1200 150 300 500 700 900 1100 1300 100 IDRM/IRRM max. @ 25°C µA On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Maximum peak, one-cycle on-state, non-repetitive surge current T50RIA 50 70 80 1310 1370 1100 1150 T70RIA 70 70 110 1660 1740 1400 1460 13860 12650 9800 8950 138500 0.77 0.88 3.6 3.2 1.55 T90RIA 90 70 141 1780 1870 1500 1570 15900 14500 11250 10270 159100 0.78 0.88 2.9 2.6 1.55 Units Conditions A °C A A t = 10ms No voltage 180° conduction, half sine wave t = 8.3ms reapplied t = 10ms 100% VRRM Sine half wave, Initial TJ = TJ max. No voltage t = 8.3ms reapplied A2s t = 10ms I2t Maximum I2t for fusing 8550 7800 6050 5520 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied A2√s V t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max. (I > π x IT(AV)), @ TJ max. mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max. (I > π x IT(AV)), @ TJ max. V ITM = π x IT(AV), TJ = 25°C., tp = 400µs square Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2 Anode supply = 6V initial IT = 30A, TJ = 25°C Anode supply = 6V resistive load = 10Ω gate pulse: 10V, 100µs, TJ = 25°C I2√t Maximum I2√t for fusing voltage 85500 0.97 1.13 4.1 3.3 1.60 VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM IH IL Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current 200 400 mA mA Switching Parameter tgd trr tq Typical turn-on time Typical reverse recovery time Typical turn-off time T50RIA T70RIA 0.9 3.0 110 T90RIA Units Conditions µs µs µs TJ = 25oC Vd = 50% VDRM, ITM = 50 A Ig = 500mA, tr = 6µs TJ =125°C, ITM = 50A tp = 300µs di/dt =10A/µs TJ = TJ max., ITM = 50A, tp = 300µs, -di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM 2 www.irf.com T..RIA Series Bulletin I27105 rev. B 02/02 Blocking Parameter IRRM IDRM VINS dv/dt Maximum peak reverse and off-state leakage current RMS isolation voltage Critical rate of rise of off-state voltage 3500 500 V V/µs 50Hz, circuit to base, all terminals shorted, TJ = 25°C, t = 1s TJ = TJ max., linear to 80% rated VDRM (1) T50RIA T70RIA 15 T90RIA Units Conditions mA TJ = TJ = TJ max. (1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90 Triggering Parameter PGM IGM -VGT VGT Max. peak gate power T50RIA 10 2.5 2.5 10 4.0 2.5 1.5 250 100 50 0.2 5.0 T70RIA 12 3.0 3.0 10 4.0 2.5 1.5 270 120 60 0.2 6.0 200 180 160 150 T90RIA 12 3.0 3.0 10 4.0 2.5 1.5 270 120 60 0.2 6.0 Units Conditions W W A V V TJ = - 40°C TJ = 25°C TJ = TJ max. TJ = - 40°C mA V mA A/µs VD = 0.67 rated VDRM, ITM = 2 x rated di/dt Ig = 400mA for T50RIA and Ig = 500mA for T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs For repetitive value use 40% non-repetitive Per JEDEC std. RS397,5.2.2.6 TJ = 25°C TJ = TJ max. @ TJ = TJ max., rated VDRM applied Anode supply = 6V, resistive load; Ra = 1Ω Anode supply = 6V, resistive load; Ra = 1Ω tp ≤ 5ms, TJ = TJ max. f=50Hz, TJ = TJ max. tp ≤ 5ms, TJ = TJ max. PG(AV) Max. average gate power Max. peak gate current Max. peak negative gate voltage Max. required DC gate voltage to trigger IGT Max. required DC gate current to trigger VGD IGD di/dt Max. gate voltage that will not trigger Max. gate current that will not trigger Max. rate of rise of turned-on current Thermal and Mechanical Specifications Parameter TJ Tstg RthJC RthCS T wt Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque ± 10% Case style to heatsink terminals 1.3 ± 10% 3 ± 10% 54 D-56 g Nm M5 screw terminals See outline table T type M3.5 mounting screws (2) non lubricated threads 0.2 K/W Mounting surface smooth, flat and greased 0.65 0.50 0.38 K/W DC operation, per junction -40 to 150 °C T50RIA T70RIA -40 to 125 T90RIA Units Conditions °C Approximate weight (2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. www.irf.com 3 T..RIA Series Bulletin I27105 rev. B 02/02 ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices T50RIA T70RIA T90RIA Sinusoidal conduction @ TJ max. 180o 0.08 0.07 0.05 120o 0.10 0.08 0.06 90o 0.13 0.10 0.08 60o 0.19 0.14 0.12 30o 0.31 0.24 0.20 180o 0.06 0.05 0.04 Rectangular conduction @ TJ max. 120o 0.10 0.08 0.06 90o 0.14 0.11 0.09 60o 0.20 0.15 0.12 30o 0.32 0.24 0.20 Units K/W Ordering Information Table Device Code T 50 2 RIA 120 G Circuit configuration ** 1 3 4 1 2 3 4 - Module type Current rating Circuit configuration ** Voltage code : code x 10 = VRRM Outline Table + - All dimensions in millimeters (inches) 4 www.irf.com T..RIA Series Bulletin I27105 rev. B 02/02 Maximum Allowable Cas e T emperature ( C) Maximum Allowable Cas e T emperature ( C) 13 0 12 0 11 0 10 0 90 80 70 60 50 0 10 20 30 40 50 60 Average On-s tate Current (A) 30 60 90 1 20 1 80 Conduction Angle 130 120 110 100 90 80 70 60 50 0 10 T 50R IA.. S eries R thJC (DC) = 0.65 K /W T 50R IA.. S eries R thJC (DC) = 0.65 K /W Conduction P eriod 90 60 30 20 30 40 120 180 50 60 DC 70 80 Average On-s tate Current (A) Fig. 1 - Current Ratings Characteristics 80 0 .5 Fig. 2 - Current Ratings Characteristics Maximum Average On-s tate P ower L os s (W) 70 60 50 180 120 90 60 30 R MS L imit 0. R 0 .3 7 th S K/ W K /W K /W A =0 1 K/ W .1 K /W 1 .5 2K -D K /W /W a el t R 40 30 Conduction Angle 3K /W 20 10 0 0 10 20 30 40 50 0 T 50R IA.. S eries T J = 125 C 5 K /W 10 K /W 20 40 60 80 100 120 Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C) Fig. 3 - On-state Power Loss Characteristics 11 0 10 0 90 80 70 60 50 R MS L imit 40 30 20 10 0 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 Average On-s tate Current (A) Max imum Allowable Ambient T emperature ( C) Conduction P eriod Maximum Average On-s tate P ower L os s (W) DC 1 80 1 20 90 60 30 R 3K 0. /W A thS 0. 5 =0 0 .7 K/ W K/ W K .1 /W -D 1K 1.5 a el t /W R K /W 2K /W 3 K /W T 5 0R IA.. S eries T J = 125 C 5 K /W Fig. 4 - On-state Power Loss Characteristics www.irf.com 5 T..RIA Series Bulletin I27105 rev. B 02/02 1200 P eak Half S ine Wave On-s tate Current (A) 1100 1000 900 800 700 600 500 1 10 100 Number Of E qual Amplitude H alf Cycle Current P uls es (N) P eak Half S ine Wave On-s tate Current (A) At Any R ated L oad Condition And W ith R ated V R R M Applied F ollowing S urge. Initial T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s 1300 1200 1100 1000 900 800 700 600 Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T J = 125 C No Voltage R eapplied R ated V R R M eapplied R T 50R I A.. S eries T 50R IA.. S eries 500 0.01 0.1 P uls e T rain Duration (s ) 1 Fig. 5 - Maximum Non-Repetitive Surge Current 1000 Ins tantaneous On-s tate Current (A) Fig. 6 - Maximum Non-Repetitive Surge Current 100 T J = 25 C 10 T J = 125 C T 50R IA.. S eries 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Ins tantaneous On-s tate Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics 100 Ins tantaneous Gate Voltage (V) R ectangular gate puls e a) R ecommended load line for r ated di/dt : 20V, 30ohms ; tr=0.5 s , tp>=6 s b) R ecommended load line for < =30% rated di/dt : 20V, 65ohms 10 tr=1 s , tp>=6 s (b) T j=-40 C T j=25 C (1) P GM = 10W, tp = 5 ms (2) P GM = 20W, tp = 2 ms (3) P GM = 50W, tp = 1 ms (4) P GM = 100W, tp = 500 s (a) T j=125 C 1 (1) (2) (3) (4) VGD IGD 0.1 0.00 1 0.0 1 0.1 T 50 R IA.. S eries 1 F requency L imited by P G(AV) 10 100 1000 Ins tantaneous Gate Current (A) Fig. 9 - Gate Characteristics 6 www.irf.com T..RIA Series Bulletin I27105 rev. B 02/02 Maximum Allowable Cas e T emperature ( C) Maximum Allowable Cas e T emperature ( C) 130 120 110 100 90 80 70 60 50 0 10 20 30 40 50 60 70 80 Average On-s tate Current (A) 30 60 90 120 180 Conduction Angle T 70R IA.. S eries R thJC (DC) = 0.50 K /W 130 120 110 100 T 70R IA.. S eries R thJC (DC) = 0.50 K /W Conduction P eriod 90 80 70 60 50 0 20 40 60 80 100 120 Average On-s tate Current (A) 60 30 90 120 180 DC Fig. 12 - Current Ratings Characteristics 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 0 70 20 40 3K Conduction Angle Fig. 13 - Current Ratings Characteristics Maximum Average On-s tate P ower L os s (W) 180 120 90 60 30 R MS L imit 0. 3K /W K/ W 0. 5 R th S 0 .7 A =0 K/ W K .1 1K /W /W -D el ta 1 .5 2K K /W /W R /W 5 K /W T 70R IA.. S eries T J = 125 C 7 K /W 60 80 100 12 0 Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C) Fig. 18 - On-state Power Loss Characteristics 140 120 100 80 R MS L imit 60 40 20 0 0 20 40 60 80 100 0 120 20 40 60 80 100 120 Average On-s tate Current (A) Max imum Allowable Ambient T emperature ( C) Conduction P eriod Maximum Average On-s tate P ower L os s (W) DC 180 120 90 60 30 R 0. thS 3 A 0 .5 K/ W = 0. 1 W K/ 0 .7 1K K/ W -D ta el K/ W /W R 1 .5 2K K /W /W T 70R IA.. S eries T J = 125 C 3 K /W 5 K /W Fig. 15 - On-state Power Loss Characteristics www.irf.com 7 T..RIA Series Bulletin I27105 rev. B 02/02 1500 P eak H alf S ine Wave On-s tate Current (A) 1400 1300 1200 1100 1000 900 800 700 1 10 100 Number Of E qual Amplitude H alf Cycle Current P uls es (N) P eak H alf S ine Wave On-s tate Current (A) At Any R ated L oad Condition And W ith R ated VR R M Applied F ollowing S urge. Initial T J = 125 C @ 6 0 H z 0.0083 s @ 5 0 H z 0.0100 s 170 0 160 0 150 0 140 0 130 0 120 0 110 0 100 0 900 800 700 Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T J = 125 C No Voltage R eapplied R ated V R R MR eapplied T 70R IA.. S eries T 70R IA.. S eries 600 0.01 0.1 P uls e T rain Duration (s ) 1 Fig. 16 - Maximum Non-Repetitive Surge Current 1000 Ins tantaneous On-s tate Current (A) Fig. 17 - Maximum Non-Repetitive Surge Current 100 T J = 25 C 10 T J = 125 C T 70R IA.. S eries 1 0 0.5 1 1.5 2 2.5 3 3.5 4 Ins tantaneous On-s tate Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics 100 Ins tantaneous Gate Voltage (V) R ectangular gate puls e a) R ecommended load line for r ated di/dt : 20V, 20ohms ; tr=0.5 s , tp>=6 s b) R ecommended load line for < =30 % rated di/dt : 15V, 40ohms 10 tr=1 s , tp>=6 s (b) T j=-40 C T j=2 5 C (1) P GM = 12W, tp = 5ms (2) P GM = 30W, tp = 2ms (3) P GM = 60W, tp = 1ms (4) P GM = 200W, tp = 300 s (a) T j=125 C 1 (1) (2) (3) (4) VGD 0.1 0.0 01 IGD 0.01 T 70R IA.., T 90R IA.. S eries F requency L imited by P G(AV) 0.1 1 10 100 1000 Ins tantaneous Gate Current (A) Fig. 19 - Gate Characteristics 8 www.irf.com T..RIA Series Bulletin I27105 rev. B 02/02 Maximum Allowable Cas e T emperature ( C) T 90R IA.. S eries R thJC (DC) = 0.38 K /W Maximum Allowable Cas e T emperature ( C) 13 0 12 0 11 0 10 0 90 80 70 60 50 0 20 130 120 110 100 90 80 70 60 30 50 0 20 T 90R IA.. S eries R thJC (DC) = 0.38 K /W Conduction Angle Conduction P eriod 30 60 90 90 60 120 180 60 80 DC 1 20 1 80 1 00 40 60 80 40 100 120 140 160 Average On-s tate Current (A) Average On-s tate Current (A) Fig. 23 - Current Ratings Characteristics Maximum Average On-s tate P ower L os s (W) 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 0 90 20 40 Conduction Angle Fig. 24 - Current Ratings Characteristics 180 120 90 60 30 R MS L imit S R th 0. 3 0. 5K /W K/ W A = /W 1K 0. 0 .7 -D K /W ta el 1K /W R 1 .5 K /W 2 K /W 3 K /W T 90R IA S eries T J = 12 5 C 60 80 100 120 Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C) Fig. 29 - On-state Power Loss Characteristics Maximum Average On-s tate P ower L os s (W) 180 160 140 120 100 80 R MS L imit 60 40 20 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C) T 90R IA.. S eries T J = 125 C Conduction Period DC 1 80 1 20 90 60 30 R th S A = 0. 0. 0. 5 1 3K W K/ /W -D ta el 0. 7 K /W R K /W 1K /W 1 .5 K /W 2 K/ W Fig. 29 - On-state Power Loss Characteristics www.irf.com 9 T..RIA Series Bulletin I27105 rev. B 02/02 1600 P eak Half S ine Wave On-s tate Current (A) 1500 1400 1300 1200 1100 1000 900 800 700 1 10 100 Number Of E qual Amplitude H alf Cycle Current P uls es (N) P eak Half S ine Wave On-s tate Current (A) At Any R ated L oad Condition And With R ated V R R M Applied F ollowing S urge. Initial T J = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800 Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T J = 125 C No Voltage R eapplied R ated VR R M R eapplied T 90R IA.. S eries T 90R IA.. S eries 700 0.01 0.1 P uls e T rain Duration (s ) 1 Fig. 27 - Maximum Non-Repetitive Surge Current 1000 Ins tantaneous On-s tate Current (A) Fig. 28 - Maximum Non-Repetitive Surge Current 100 T J = 25 C 10 T J = 125 C T 90R IA.. S eries 1 0 0.5 1 1.5 2 2.5 3 3.5 Ins tantaneous On-s tate Voltage (V) Fig. 21 - On-state Voltage Drop Characteristics 1 S teady S tate Value R thJC = 0.65 K /W R thJC = 0.50 K /W R thJC = 0.38 K /W (DC Operation) 0.1 T 5 0R IA.. S eries T 70R IA.. S eries T 90R IA.. S eries T rans ient T hermal Impedance Z thJC (K /W ) 0.01 0.0 01 0.01 0.1 1 10 10 0 S quare Wave P uls e Duration (s ) Fig. 34 - Thermal Impedance Z thJC Characteristics 10 www.irf.com T..RIA Series Bulletin I27105 rev. B 02/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02 www.irf.com 11