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UFB120FA20

UFB120FA20

  • 厂商:

    IRF

  • 封装:

  • 描述:

    UFB120FA20 - Insulated Ultrafast Rectifier Module - International Rectifier

  • 数据手册
  • 价格&库存
UFB120FA20 数据手册
Bulletin PD-20487 12/01 UFB120FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package (VISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Optimized for Power Conversion: Welding and Industrial SMPS Applications Industry Standard Outline Plug-in Compatible with other SOT-227 Packages Easy to Assemble Direct Mounting to Heatsink trr = 28ns IF(AV) = 120A @ TC = 90°C VR = 200V Description The UFB120FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/ RFI. Absolute Maximum Ratings Parameters VR IF IFSM PD V ISOL TJ, TSTG Cathode-to-Anode Voltage Continuous Forward Current, TC = 90°C Single Pulse Forward Current, TC = 25°C Max. Power Dissipation, TC = 90°C Operating Junction and Storage Temperatures Per Diode Per Diode Per Module Max 200 60 850 110 2500 - 55 to 150 Units V A W V °C RMS Isolation Voltage, Any Terminal to Case, t = 1 min Case Styles UFB120FA20 1 4 SOT-227 www.irf.com 2 3 1 UFB120FA20 Bulletin PD-20487 12/01 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) per diode Parameters VBR VFM Cathode Anode Breakdown Voltage Forward Voltage Min Typ Max Units Test Conditions 200 V V V µA mA pF IR = 100µA IF = 60A IF = 60A, TJ = 150°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 200V 0.96 1.13 0.79 0.90 105 100 1.0 - IRM Reverse Leakage Current - CT Junction Capacitance - Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode Parameters trr Reverse Recovery Time Min Typ Max Units Test Conditions 32 64 4.0 8.2 64 263 28 nC A ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 50A VR = 100V diF /dt = 200A/µs IRRM Peak Recovery Current - Qrr Reverse Recovery Charge - Thermal - Mechanical Characteristics Parameters RthJC RthCS Wt T Junction to Case Single Diode Conducting Both Diodes Conducting Case to Heat Sink, Flat, Greased Surface Weight Mounting Torque Min - Typ 0.8 0.4 0.05 30 1.3 Max 1.1 0.55 - Units K/W g (N*m) 2 www.irf.com UFB120FA20 Bulletin PD-20487 12/01 1000 100 Tj = 150˚C Reverse Current - I R (µA) 10 1 0.1 0.01 0.001 0 125˚C 25˚C Instantaneous Forward Current - I F (A) 100 Reverse Voltage - VR (V) 50 100 150 200 Tj = 150˚C Tj = 125˚C Tj = 25˚C Junction Capacitance - C T (pF) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 1000 Tj = 25˚C 10 1 0.2 100 0.6 1 1.4 1.8 1 10 100 1000 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (per diode) 10 (°C/W) Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage thJC Thermal Impedance Z 1 Single Pulse (Thermal Impedance) PDM t1 0.1 Notes: 1. Duty factor D = t1/ t2 t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 4 - Max. Thermal Impedance Z thJC (per diode) www.irf.com 3 UFB120FA20 Bulletin PD-20487 12/01 150 Allowable Case Temperature (°C) Average Power Loss ( Watts ) 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 Average Forward Current - I F(AV) ( A) Fig. 6 - Forward Power Loss (per diode) 140 130 120 110 100 Square wave (D = 0.50) 80% Rated Vr applied RMS Limit DC D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 90 see note (3) 80 0 10 20 30 40 50 60 70 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (per diode) 80 70 60 50 40 30 20 10 0 100 Qrr ( nC ) trr ( ns ) 800 If = 50A Vrr = 200V 700 Tj = 125˚C If = 50A Vrr = 200V 600 500 Tj = 125˚C Tj = 25˚C 400 300 200 100 0 100 Tj = 25˚C diF /dt (A/µs ) 1000 diF /dt (A/µs ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com UFB120FA20 Bulletin PD-20487 12/01 3 IF t rr ta tb 4 VR = 200V 0 2 Q rr I RRM 0.01 Ω L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 1 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 di f /dt 4. Qrr - Area under curve defined by t rr and IRRM Q rr = t rr x I 2 RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions SOT-227 Package Details LEAD ASSIGNMENTS FRED Notes: 1. Dimensioning & tolerancing per ANSI Y14.5M-1982. 2. Controlling dimension: millimeter. 3. Dimensions are shown in millimeters (inches). www.irf.com 5 UFB120FA20 Bulletin PD-20487 12/01 SOT-227 Package Details Tube QUANTITIES PER TUBE IS 10 M4 SCREW AND WASHER INCLUDED Ordering Information Table Device Code UF 1 B 2 120 3 F 4 A 5 20 6 1 2 3 4 5 6 - ULTRAFAST RECTIFIER Ultrafast Pt diffused Current Rating Circuit Configuration Package Indicator Voltage Rating (120 = 120A) (2 separate Diodes, parallel pin-out) (SOT-227 Standard Isolated Base) (20 = 200V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/01 6 www.irf.com
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