2SA1993

< SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A 2.1 0.425 1.25 0.425 0.5 Unit：ｍｍ 2SA1235A 2.5 1.5 0.5 ・Excellent linearity of DC forward gain ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max 0.65 0.95 APPLICATION For Hybrid IC,small type machine low frequency voltageAmplify application 2.0 1.3 0.3 ① ② ③ ① ② ③ 2.9 1.90 0.65 0.9 1.1 0.95 0.15 0.7 0.8 JEITA：SC-70 JEDEC：－ TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR 0～0.1 JEITA：SC-59 JEDEC：TO-236 類似 TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR 2SA1993 4.0 3.0 0～0.1 14.0 1.0 1.0 0.1 0.45 1.27 1.27 0.4 2.5 ① ② ③ JEITA：－ JEDEC：－ TERMINAL CONNECTER ①：EMITTER ②：COLLECTOR ③：BASE ISAHAYA ELECTRONICS CORPORATION 0.16 0.4 < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) MAXIMUM RATINGS（Ｔａ＝２５℃） Symbol ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ ＰＣ Ｔｊ Ｔｓｔｇ Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings 2SA1235A -60 -6 -50 200 200 200 +150 -55～+150 450 2SA1602A -60 2SA1993 -50 Unit V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS（Ta=25℃） Parame ter Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ Ｉ EＢＯ Symbol C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance C to E break down voltage 2SA1993 Test conditions I C=-100μA，RBE=∞ 2SA1235A,2SA1602A Min -50 E E Limits Typ Max -0.1 -0.1 -0.1 500 Unit V μA μA － － － V MHz pF dB VCB=-50V，I VCB=-60V，I =0 =0 150 ｈＦＥ* ｈＦＥ ＶＣＥ（ｓａｔ） ｆＴ Cob NF VEB=-6V，I VCE=-6V，I 2SA1993 C =0 C =-1mA VCE=-6V，I C 2SA1235A,2SA1602A =-0.1mA 50 90 -0.3 200 4.0 20 Noise figure E F I C =-100mA，I B =-10mA VCE=-6V，I E =10mA VCB=-6V，I E =0,f=1MHz VCE=-6V，I E =0.3mA,f=100Hz,RG=10ｋΩ *： It shows hFE classification in below table. ｈFE 2SA1235A 2SA1602A 2SA1993 150～300 250～500 ISAHAYA ELECTRONICS CORPORATION < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) 2SA1235A、2SA1602 COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 250 500 2SA1993 COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE COLLECTOR DISSIPATION Pc (mW) 200 COLLECTOR DISSIPATION Pc (mW) 0 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) 125 150 400 150 300 100 200 50 100 0 0 0 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) 125 150 ISAHAYA ELECTRONICS CORPORATION < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) COMMON EMITTER OUTPUT -50 0.18mA 0.16mA COLLECTOR CURRENT IC(mA) -40 -50 COMMON EMITTER TRANSFER Ta=25℃ 0.14mA 0.12mA COLLECTOR CURRENT IC(mA) -40 Ta=25℃ VCE=-6V -30 0.10mA 0.08mA -30 -20 0.06mA 0.04mA -20 -10 0.02mA IB=0 -10 -0 -0 -1 -2 -3 -4 -5 COLLECTOR EMITTER VOLTAGE VCE(V) -0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE TO EMITTER VOLTAGE VBE(V) DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 Ta=25℃ VCE=-6V 100(@IC=-1mA) 1000 250 Ta=25℃ VCE=-6V GAIN BAND WIDTH PRODUCT fT(MHz) 200 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE 150 100 100 10 50 1 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25℃ IE=0 f=1MHz 0 -1000 0.1 1 10 EMITTER CURRENT IE(mA) 100 10 1 0.1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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