〈 SMALL-SIGNAL TRANSISTOR〉
2SA2027
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) DESCRIPTION
2SA2027 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for high voltage application. .
hFE rank 4.4±0.1 1.6±0.1 Lot No.
OUTLINE DRAWING
Unit: mm
φ1
FEATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.5V max
2.5±0.1
0.8MIN
1.5± 0.1 1.5± 0.1
Abbreviation
0.4± 0 0 7 . 0.5± 0 0 7 . 0 1 MAX . 0.4± 0 0 7 .
APPLICATION
For Hybrid IC, DC-DC converter
For kind
JEITA :SC-62 TERMINAL CONNECTER
MAXIMUM RATINGS (Ta=25℃)
Symbol VCBO VCEO VEBO IO Pc Tj Tstg Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings -300 -300 -7 -100 500 +150 -55∼+150 Unit V V V mA mW ℃ ℃
① :EMITTER ② :COLLECTOR ③ :BASE
ELECTRICAL CHARACTERISTICS(Ta=25℃ )
Parameter C to B break down voltage E to Bbreak down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR) EBO V(BR)CEO ICBO IEBO hFE VCE(sat) fT Cob Test conditions I C=-50μA ,I E=0 I E=-50μA ,I C=0 I C=-1mA ,R
BE=∞
Limits Min -300 -7 -300 50 Typ 40 3.0 Max -0.5 -0.5 305 -0.5 -
Unit V V V μA μA
V CB=--300V, I E=0mA V EB=-5V, I C=0mA V CE=-10V, I C=-10mA I C=-100mA ,IB=-10mA V CE=-6V, I E=10mA V =-6V, I =0,f=1MHz
V MHz pF
ISAHAYA ELECTRONICS CORPORATION
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6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003
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