〈 SMALL-SIGNAL TRANSISTOR 〉
PRELIMINARY
Notics:This is not a final specification. Some parametric limits are subject to change. DESCRIPTION
2SA2068 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency application. Since it is a super-thin flat lead type package,a high-density mounting are possible. 0.4 Complementary with 2SA1235A. ① ② ③ 0.25 0.2 0.8 0.2
2SA2068
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING
Unit :mm
● Super-thin flat lead type package. t=0.45mm ● Excellent linearly of DC forward current gain. ● Low collector to emitter saturation voltage 0.45 VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify application.
MAXIMUM RATINGS(Ta=25℃ )
Symbol VCBO VCEO VEBO I
O
0.4
FEATURE
1.2 0.8
JEITA :
Ratings -50 -6 -50 -200 100 +125 -55∼+125 Unit V V V mA mW ℃ ℃
Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature
TERMINAL CONNECTER ① :BASE ② :EMITTER ③ :COLLECTOR
Pc Tj Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ )
Limits Min Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E saturation voltage Gain bandwidth product Collector output capacitance Noise figure V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob NF IC=-100μA, R V V V V
CB EB BE=∞
Typ ― ※ 200 4.0 -
Max ― -0.1 -0.1 800 - 0.3 20 V μA μA v MHz pF dB
-50 150 90 -
=-50V, I E=0mA
=-6V, I C=0mA =-6V, I C=-1mA =-6V, I C=-0.1mA =-6V, I E=10mA =-6V, I E=0mA,f=1MHz
CE CE
IC=-100mA, I B=-10mA V V V
CE
CB CE
=-6V, I E=0.3mA,f=100Hz,RG=10kΩ
※ It shows hFE classification in below table.
Item hFE Abbrivation E 150∼300 ME F 250∼500 MF G 400∼800 MG
ISAHAYA ELECTRONICS CORPORATION
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6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003
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