2SA2167

2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION 2SA2167 is a silicon PNP epitaxial type transistor. It is designed with high voltage, high Collector current, high Collector dissipation. OUTLINE DRAWING 4.6MAX 1.6 1.5 Unit：mm ●High voltage VCEO=-60V ●High Collector current IC=-2A ●Low Collector to Emitter saturation voltage VCE（sat）＝0.5VMax （@IC=-1A/IB=-50mA） ●High Collector dissipation PC=500mW 0.8MIN FEATURE E C B 1.5 3.0 0.53 MAX 0.48MAX 0.4 4.2MAX 2.5 MARKING マーキング APPLICATION Audiovisual apparatus, VTR, Relay drive MAXIMUM RATINGS（Ta=25℃） Symbol VCBO VEBO VCEO IC ICM PC Tj Tstg Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Junction temperature Storage temperature Ratings -60 -6 -60 -2 -3 500 150 -55∼150 Unit V V V A A mW ℃ ℃ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR JEITA：SC-62 JEDEC：SOT-89 MARKING TYPE NAME AL D Lot No. hFE ITEM ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol V（BR）CBO V（BR）EBO V（BR）CEO ICBO IEBO hFE VCE（sat） fT Cob Parameter Collector to Base brake down voltage Emitter to Base brake down voltage Collector to Emitter brake down voltage Collector cut off current Emitter cut off current DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance Test condition IC=-10uA、IE=0mA IE=-10uA、IC=0mA IC=-2mA、RBE=∞ VCB=-50V、IE=0mA VEB=-4V、IC=0mA VCE=-4V、IC=-100mA IC=-1A、IB=-50mA VCE=-2V、IE=10mA VCB=10V、IE=0mA、f=1MHz C 55∼110 Min -60 -6 -60 Limits Typ Max Unit V V V μA μA − V MHz pF 55 -0.2 65 23 D 90∼180 -0.2 -0.2 300 -0.5 MARKING hFE E 150∼300 ISAHAYA ELECTRONICS CORPORATION 2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)[mV] Ta=25℃ VCE=-6V COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT -1000 Ta=25℃ IC/IB=20/1 DC FORWARD CURRENT GAIN hFE 100 -100 10 -10 1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] -10000 -1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] -10000 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 1000 Ta=25℃ VCE=-2V COLLECTOR OUTPUT CAPATITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob[pF] Ta=25℃ IE=0A f=1MHz GAIN BAND WIDTH PRODUCT fT[MHz] 100 10 10 1 1 10 EMITTER CURRENT IE[mA] 100 1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB[V] -100 COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 700 600 COLLECTOR DISSIPATION Pc[mW] 500 400 300 200 100 0 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta[℃] 150 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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