2SC5547

〈Transistor〉 For High Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5547 is SC-62(SOT-89) package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. OUTLINE DRAWING UNIT:mm 2SC5547 4.6 MAX 1.6 1.5 FEATURE ･High gain bandwidth product. fT=4.5GHz ･High gain,low noise ･Can operate at low voltage. ･SC-62(SOT-89)package easy mountaing E C 0.53 MAX B 0.4 0.48 MAX 1.5 3.0 Mark APPLICATION For TV tuners,high frequency amplifier. celluar phone system. TERMINAL CONNECTOR Ｅ: EMITTER Ｃ: COLLECTOR JEITA : SC-62 JEDEC : Ｂ: BASE MAXIMUM RATINGS (Ta=25℃) Symbol VCBO VEBO VCEO IC PC Tj Tstg Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Janction temperture Storage temperture Ratings 20 3 15 50 400 +150 -55∼+150 unit V V V mA mW ℃ ℃ Marking AD W Lot No. ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Limits Test conditions I CB=10μA, I E=0 I C=1mA, RBE=∞ VCB=15V, I E=0 VEB=3V, I C=0 VCE=5V, I C=20mA VCB=5V, I E=0, f=1MHz VCE=5V, I E=-20mA VCB=5V, I C=20mA, f=1.8GHz VCE=5V, I C=5mA, f=1.0GHz 3.5 30 90 1.0 4.5 9.0 1.5 min 20 15 0.5 10 200 1.5 typ max unit V V μA μA pF GHz dB dB V(BR)CBO C to B break down voltage V(BR)CEO C to E break down voltage I CBO I EBO hFE Cob fT |S21|2 NF Collector cut off curent Emitter cut off curent DC forward current gain Collector output capacitance Gain bandwidth product Insertion power gain Noise figure ISAHAYA  ELECTRONICS  CORPORATION 〈Transistor〉 For High Frequency Amplify Application Silicon NPN Epitaxial Type 2SC5547 直流電流増幅率−コレクタ電流特性 DC forward current gain VS. Collector current 1000 Ta=25℃ VCE=5V 10 コレクタ電流 IC(mA) エミッタ接地伝達特性 Common Emitter Transfer 100 Ta=25℃ VCE=5V 直流電流増幅率 hFE 100 1 0.1 10 0.01 1 0.1 1 10 100 0.001 0.5 0.6 0.7 0.8 0.9 1 Collector current コレクタ電流 IC(mA) Base to Emitter voltage ベース・エミッタ間電圧 VBE(V) 電力利得−コレクタ電流特性 Insertion power gain  VS. Collector current 20.00 Ta=25℃ VCE=5V f=0.5GHz Gain bandwidth product 利得帯域幅積−コレクタ電流特性 VS.Collector current 10.00 Ta=25℃ VCE=5V 利得帯域幅積 fT(GHz) 18.00 16.00 電力利得 ｜S21｜(dB) 14.00 12.00 10.00 8.00 6.00 4.00 2.00 1.00 f=1.0GHz 0.10 0.1 1.0 10.0 100.0 0.00 0.1 1.0 10.0 100.0 Collector current コレクタ電流 IC(mA) Collector output capacitance VS Collector output capacitance コレクタ出力容量− Collector output capacitance コレクタ・ベース間電圧特性 VS. Collector to Base voltage 10.0 Ta=25℃ IE=0mA f=1MHz Collector コレクタ電流 IC(mA) current 雑音指数−コレクタ電流特性 Noise Figure VS. Collector current 5.0 4.5 4.0 3.5 3.0 Ta=25℃ VCE=5V f=1.0GHz 1.0 2.5 2.0 1.5 1.0 0.5 0.1 0.1 1 10 100 0.0 1 10 100 Collector to Base voltage コレクタ・ベース間電圧 VCB (V) Collector コレクタ電流 I C(mA) current Collector current ISAHAYA  ELECTRONICS  CORPORATION 〈Transistor〉 For High Frequency Amplify Application Silicon NPN Epitaxial Type Ｓ parameter VCE=5V,IC=5mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 VCE=5V,IC=2mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.410 0.399 0.389 0.382 0.377 0.366 0.359 0.356 0.354 0.350 0.349 0.346 0.343 0.343 0.343 0.350 ANG -117.8 -128.3 -138.5 -147.4 -156.1 -163.9 -170.1 -176.7 176.6 169.9 163.5 156.4 149.7 143.8 137.2 132.4 S21 MAG 0.131 0.134 0.139 0.142 0.144 0.148 0.152 0.156 0.162 0.168 0.176 0.185 0.194 0.205 0.216 0.228 ANG 38.9 36.7 35.3 34.7 34.6 35.8 36.9 38.4 39.8 41.2 42.6 43.9 44.9 45.4 46.0 46.4 S12 MAG ANG 91.5 4.272 85.5 3.612 79.9 3.142 74.9 2.749 69.7 2.471 64.6 2.240 59.9 2.034 55.5 1.864 51.4 1.730 47.6 1.610 43.8 1.515 40.0 1.425 36.5 1.347 33.0 1.282 29.8 1.226 26.5 1.153 S22 MAG ANG 0.639 -50.9 0.599 -55.9 0.577 -60.0 0.559 -63.7 0.554 -67.2 0.547 -70.3 0.546 -73.2 0.551 -75.9 0.554 -78.2 0.561 -81.1 0.567 -83.6 0.573 -86.1 0.582 -88.2 0.589 -90.4 0.597 -92.7 0.609 -95.2 S11 MAG 0.334 0.321 0.312 0.305 0.301 0.293 0.285 0.281 0.277 0.273 0.271 0.270 0.268 0.268 0.269 0.270 ANG -143.8 -154.7 -164.0 -172.2 -179.5 173.3 166.3 160.5 154.1 147.5 141.7 135.7 129.5 123.1 118.1 112.8 S21 MAG 0.098 0.108 0.119 0.130 0.141 0.153 0.165 0.177 0.189 0.200 0.213 0.227 0.238 0.250 0.264 0.276 ANG 50.7 51.8 52.4 52.9 52.9 52.8 53.0 52.6 52.0 51.4 50.9 49.9 49.0 48.1 47.1 45.9 S12 MAG ANG 86.1 5.077 80.3 4.301 75.2 3.721 70.4 3.281 65.7 2.948 61.3 2.675 57.3 2.441 53.4 2.258 49.6 2.099 46.1 1.957 42.6 1.843 39.2 1.741 35.9 1.650 32.9 1.572 29.8 1.502 26.9 1.434 S22 MAG ANG 0.433 -56.6 0.409 -59.8 0.400 -62.7 0.397 -65.6 0.405 -68.4 0.409 -71.1 0.413 -73.7 0.424 -76.0 0.432 -78.5 0.443 -80.6 0.454 -83.2 0.462 -85.5 0.473 -87.3 0.484 -89.5 0.495 -91.8 0.507 -93.9 2SC5547 VCE=5V,IC=10mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.300 0.292 0.285 0.280 0.277 0.272 0.266 0.263 0.259 0.256 0.254 0.253 0.252 0.251 0.251 0.253 ANG -164.4 -174.1 177.1 170.4 163.6 156.7 150.8 145.5 139.6 133.4 128.1 122.1 116.8 111.4 105.7 100.7 S21 MAG ANG 62.0 0.089 62.3 0.104 61.7 0.118 61.5 0.132 60.5 0.147 59.6 0.161 58.6 0.176 57.6 0.190 56.0 0.203 54.8 0.216 53.6 0.231 52.1 0.244 50.5 0.258 48.9 0.270 47.4 0.283 46.1 0.295 S12 MAG ANG 81.9 5.555 76.8 4.675 72.0 4.056 67.6 3.574 63.4 3.208 59.4 2.902 55.7 2.657 52.2 2.454 48.6 2.281 45.3 2.129 42.0 2.006 38.7 1.898 35.6 1.792 32.7 1.706 29.8 1.631 27.0 1.561 S22 MAG ANG 0.326 -55.8 0.318 -58.3 0.324 -61.3 0.327 -64.4 0.337 -67.3 0.346 -70.1 0.355 -72.7 0.367 -75.2 0.377 -77.7 0.390 -79.8 0.404 -82.5 0.416 -84.9 0.423 -86.7 0.439 -88.6 0.450 -90.7 0.465 -93.3 ISAHAYA  ELECTRONICS  CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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