2SC5621

〈SMALL-SIGNAL TRANSISTOR〉 2 SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. OUTLINE DRAWING 1.6 0.8 Unit :mm 0.4 0.4 FEATURE ・High gain bandwidth product. fT=4.5GHz ・High gain,low noise. ・Can operate at low voltage. ・Su per mini package for easy m ountin g. 1 3 2 APPLICATION For TV tuners,high frequency amplifier,celluar phone system. TERMINAL CONNECTOR : BASE : EMITTER EIJA: : COLLECTOR 1 2 3 MAXIMUM RATINGS (Ta=25℃) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction tem perature Storage tem prature Ratin gs 20 12 3 50 100 +125 -55~+125 Unit V V V mA mW ℃ ℃ M ARKING G TYPE NAME W hFE ITEM ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol I I CBO E BO Parameter Collector cut off current Emitter cut off current DC forward current gain Gain bandwidth product 2 Test conditions Min Limits Typ Max Unit 1.0 1.0 μA μA VCB =10V, I E =0mA VEB =1V, I C=0mA VCE =5V, I C=20mA VCE =5V, I E =20mA VCB =5V, I E =0mA, f =1MHz VCE =5V, I C=20mA, f =1GHz VCE =5V, I C=5mA, f =1GHz 7.5 50 4.5 1.0 9.0 1.5 hFE fT C ob S21 NF 250 GHz pF dB dB Collector output capacitance Insertion power gain Noise figure 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 直流電流増幅率−コレク DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT Ta=25℃ VCE=5V 10 100 1 エミッタ接地伝達 COMMON EMITTER TRANSFER 100 Ta=25℃ VCE=5 1000 0.1 10 0.01 1 0.1 1 10 IC(mA) 100 COLLECTOR CURRENT コレクタ電流 IC 0.001 0.5 0.6 0.7 0.8 0.9 1 BASE TO EMITTER VOLTAGE V VBE(V) ベース・エミッタ間電圧  利得帯域幅積−コレク 10.00 Ta=25℃ VCE=5 GAIN BANDWIDTH PRODUCT VS. COLLECTOR CURRENT 電力利得−コレクタ P OWER GAIN VS. COLLECTOR CURRENT 20.00 18.00 16.00 14.00 12.00 f=0.5GH Ta=25 VCE=5 1.00 10.00 8.00 6.00 4.00 2.00 f=1.0GH 0.10 0.1 1.010.0 100.0 IC(mA) COLLECTOR CURRENT コレクタ電流 IC 0.00 0.11.010.0 100.0 COLLECTOR CURRENT CIC(mA) コレクタ電流 I コレクタ出力容量− COLLECTOR OUTPUT CAPACITANCE コレクタ・ベース間電圧特性 VS. COLLECTOR TO BASE VOLTAGE 10.0 Ta=25℃ IE =0mA f=1MHz 雑音指数−コレクタ電流特性 NOISE FIGURE VS. COLLECTOR CURRENT 5.0 4.5 4.0 3.5 3.0 Ta=25℃ V CE =5V f=1.0GHz 1.0 2.5 2.0 1.5 1.0 0.5 0.1 0.1 1 10 100 (V) コレクタ・ベース間電圧 V COLLECTOR TO BASE VOLTAGE CB VCB(V ) 0.0 1 10 コレクタ電流 I COLLECTOR CURRENT C (mA) IC(mA) 100 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE S P ARAMETER VCE=5V,IC=10mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 V CE=5V,IC=8mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.310 0.305 0.303 0.294 0.294 0.290 0.291 0.290 0.291 0.286 0.284 0.289 0.289 0.292 0.292 0.292 ANG -148.5 -159.2 -167.6 -175.0 178.8 172.6 167.4 162.3 157.4 153.5 149.1 145.3 141.3 137.4 133.9 130.5 MAG 0.089 0.101 0.114 0.127 0.140 0.154 0.166 0.181 0.194 0.206 0.219 0.233 0.247 0.258 0.271 0.284 S21 ANG 60.1 61.7 63.2 62.7 63.0 62.8 61.9 62.0 60.6 59.9 59.7 58.6 57.8 56.8 55.6 54.6 S12 MAG ANG 87.8 5.733 82.8 4.852 78.2 4.205 74.0 3.701 70.2 3.338 66.4 3.028 63.0 2.773 59.6 2.572 56.3 2.392 53.5 2.232 50.6 2.097 47.7 1.989 44.8 1.883 42.2 1.797 39.5 1.719 37.0 1.642 S22 MAG 0.337 0.331 0.312 0.310 0.308 0.310 0.311 0.318 0.318 0.317 0.322 0.323 0.332 0.335 0.338 0.342 ANG -44.9 -46.8 -46.4 -47.2 -49.6 -51.5 -53.0 -55.4 -57.7 -60.7 -62.2 -64.1 -66.3 -68.4 -70.4 -72.7 S11 MAG 0.297 0.292 0.294 0.287 0.285 0.284 0.285 0.283 0.287 0.282 0.278 0.285 0.286 0.286 0.288 0.287 ANG -155.6 -165.3 -172.9 179.5 174.2 168.6 163.2 158.8 154.2 150.7 146.5 142.4 138.8 135.1 131.4 128.8 MAG 0.085 0.100 0.114 0.128 0.143 0.155 0.169 0.182 0.197 0.211 0.222 0.236 0.249 0.263 0.274 0.288 S21 ANG 63.2 63.9 65.1 65.1 64.7 64.5 63.7 63.2 61.9 61.4 60.8 59.2 57.9 56.8 55.8 55.0 S12 MAG ANG 86.2 5.895 81.4 4.977 77.1 4.308 73.0 3.791 69.3 3.413 65.6 3.098 62.5 2.833 59.2 2.631 55.9 2.440 53.2 2.282 50.2 2.142 47.4 2.030 44.7 1.923 42.0 1.832 39.5 1.751 37.0 1.677 S22 MAG 0.310 0.308 0.292 0.291 0.290 0.294 0.294 0.302 0.303 0.306 0.307 0.310 0.321 0.322 0.325 0.330 ANG -43.6 -45.0 -45.0 -45.7 -48.2 -50.4 -51.9 -54.4 -56.7 -58.9 -61.3 -63.3 -65.5 -67.8 -69.8 -72.4 VCE=5V,IC=6mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.343 0.328 0.323 0.311 0.309 0.303 0.302 0.303 0.302 0.297 0.294 0.299 0.300 0.301 0.302 0.299 ANG -139.3 -150.5 -159.4 -167.9 -174.4 178.8 172.7 167.4 162.1 158.1 153.7 148.7 144.7 140.6 136.8 133.3 MAG 0.091 0.104 0.115 0.127 0.139 0.153 0.163 0.176 0.190 0.201 0.214 0.225 0.238 0.250 0.263 0.276 S21 ANG 56.5 57.6 58.7 59.0 59.9 59.7 59.8 59.1 59.1 59.1 58.3 57.5 56.5 56.0 55.1 54.3 S12 MAG 5.461 4.641 4.036 3.565 3.218 2.919 2.675 2.486 2.306 2.162 2.029 1.924 1.824 1.739 1.666 1.592 ANG 90.3 84.9 79.9 75.4 71.2 67.3 63.8 60.3 56.8 54.0 50.8 47.8 44.9 42.2 39.5 36.9 S22 MAG 0.382 0.369 0.347 0.340 0.335 0.336 0.335 0.342 0.341 0.341 0.345 0.344 0.353 0.356 0.360 0.363 ANG -46.1 -47.9 -47.8 -48.4 -50.5 -52.7 -54.0 -56.5 -58.3 -60.2 -62.9 -65.1 -66.9 -68.9 -70.8 -73.1 〈SMALL-SIGNAL TRANSISTOR〉 2 SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE S PARAMETER V CE=5V,IC=4mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 V CE=5V,IC=2mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.506 0.480 0.453 0.434 0.421 0.408 0.398 0.391 0.388 0.381 0.377 0.379 0.380 0.377 0.380 0.379 ANG -106.9 -118.6 -130.6 -139.7 -148.4 -156.6 -164.1 -171.0 -177.9 176.7 171.4 165.0 160.0 154.6 149.2 145.1 S21 MAG 0.120 0.128 0.133 0.139 0.144 0.149 0.154 0.161 0.168 0.174 0.183 0.191 0.202 0.212 0.223 0.233 ANG 44.1 42.3 42.1 42.3 42.3 43.7 44.6 46.5 47.2 48.6 50.1 50.7 51.9 52.6 52.9 53.5 S12 MAG 4.062 3.503 3.115 2.767 2.519 2.316 2.129 1.992 1.857 1.744 1.643 1.562 1.481 1.416 1.357 1.294 ANG 100.4 94.0 87.7 82.0 76.7 71.9 67.4 63.1 58.9 55.4 51.8 48.3 44.9 41.9 39.0 36.0 S22 MAG ANG 0.593 -42.3 0.005 -46.3 0.004 -47.5 0.003 -49.2 0.003 -51.6 0.002 -54.1 0.002 -55.8 0.001 -58.2 0.001 -60.2 0.001 -62.4 0.001 -64.5 0.000 -66.6 0.000 -68.7 0.000 -70.5 0.000 -72.5 0.000 -75.0 S11 MAG 0.399 0.375 0.364 0.348 0.341 0.332 0.329 0.327 0.325 0.321 0.318 0.320 0.322 0.324 0.324 0.323 ANG -126.4 -137.6 -148.1 -156.9 -164.5 -171.8 -178.6 175.5 169.3 165.0 159.9 154.5 150.2 145.7 141.4 137.7 S21 MAG 0.099 0.110 0.118 0.127 0.137 0.149 0.159 0.170 0.180 0.193 0.203 0.215 0.226 0.238 0.250 0.262 ANG 51.8 50.9 52.4 53.4 53.7 55.0 55.1 55.8 55.1 56.1 55.7 55.7 55.4 54.9 54.8 54.0 S12 MAG ANG 4.984 94.1 4.260 88.1 3.729 82.7 3.306 77.7 2.994 73.0 2.723 68.9 2.502 65.0 2.326 61.3 2.162 57.5 2.027 54.5 1.905 51.2 1.807 48.1 1.715 45.0 1.635 42.1 1.564 39.4 1.498 36.7 S22 MAG ANG 0.455 -45.8 0.439 -48.2 0.408 -48.4 0.397 -49.7 0.387 -52.0 0.387 -54.0 0.383 -55.2 0.387 -57.3 0.383 -59.7 0.382 -61.8 0.385 -63.7 0.385 -65.4 0.393 -67.6 0.395 -69.5 0.397 -71.7 0.401 -73.9 http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN   Keep safety in your circuit designs !   ・ Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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