2SC5626

　 〈Transistor〉 For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type) 2SC5626 DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial ty pe transistor. It is designed f or high f requency amplif y application. OUTLINE DRAWING 2.1 0.425 1.25 0.425 Unit:mm FEATURE ・Super mini package f or easy mounting ・High gain band width product 2.0 1.30 0.65 0.65 1 0.3 2 3 A PPLICATION Small ty pe machine high f requency amplif y application 0.9 0.7 0～0.1 TERMINAL CONNECTOR 1 : BASE 2 : EMITTER 3 : COLLECTOR JEITA : SC-70 JEDEC : 0.15 MAXIMUM RATINGS (Ta=25℃) SY MBOL VCBO VEBO VCEO I C PARAMETER Collector to Base v oltage Emitter to Base v oltage Collector to Emitter voltage RATINGS 30 4 20 50 150 +150 -55to+150 UNIT V V V mA mW ℃ ℃ MARKING Collector current Collector dissipation(Ta=25℃) S TYPE NAME W PC Tj Tstg Junction temperature Storage temprature ELECTRICAL CHARACTERISTICS (Ta=25℃) SY MBOL PARAMETER TEST CONDITIONS I C=50μ A, I E =0mA I C=100μ A, R BE =∞ I C=50μ A, I C=0mA VCB =20V, I E =0 VEB =3V, I C=0 VCE =10V, I C=5mA I C=10mA, I B =1mA VCE =5V, I E =-10mA VCB =6V, I E =0, f =1MHz 600 50 148 0.1 1100 1.2 1.5 0.3 V MHz pF LIMITS MIN 30 20 4 0.5 0.5 TY P MAX UNIT V V V μA μA V(BR)CBO C to B break down v oltage V(BR)CEO C to E break down v oltage V(BR)EBO E to B break down v oltage I CBO I E BO Collector cut cf f current Emitter cut of f current DC f orward current gain C to E Saturation v oltage Gain band width product Collector output capacitance hFE VCE(sat) fT C ob ISAHAYA ELECTRONICS　CORPORATION 　　 　 〈Transistor〉 For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super　Mini type) C o m m oエミッタ接地伝達特性 t p u t n emitter ou 20 2SC5626 Common emitter transfer 180μ A 18 160μ A 140μ A 120μ A 100μ A 80μ A 60μ A Ta=25℃ エミッタ接地出力特性 100 V CE=6V Ta=25℃ 16 14 10 12 10 8 1 6 4 2 40μ A 20μ A 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ベース・エミッタ間電圧　V base to collector voltage VBE (V) BE(V) 0 0 2 4 6 8 10 12 14 16 IB=0μ A 18 20 コレクタ・エミッタ間 電 圧 VCE(V collector to emitter voltage ) V CE(V) DC forward current gain 直流電流増幅率－コレクタ電流特性 t VS. collector curren 10000 Ta=25℃ VCE=10V 1000 1 10 collector to emitter voltage コレクタ・エミッタ飽和電圧 V S . c o l－コレクタ電流特性r r e n t lector cu Ta=25℃ IC/IB=10/1 100 0.1 10 1 0.1 110 100 1000 0.01 0.11 10 100 collector current コレクタ電流 I IC (mA) C(mA) collector コレクタ電流 I IC(mA) current C (mA) collector output/input capacitance V S . C o l入出力容量－ベース電圧特性 t a g e lector to Base Vol 100.0 Gain band width product 利得帯域幅積－エミッタ電流特性 VS. Emitter current 10000 V CE=5V Ta=25℃ f=1MHz IE=0A IC=0A Ta=25℃ 10.0 1000 Cob 100 1.0 Cib 10 0.1 1 10100 0.1 0.11.010.0 100.0 コレクタ・ベース電圧　V collector to base voltage VC BCB(V) (V) エミッタ・ベース電圧　V emitter to base voltage VE BEB(V) (V) emitter エミッタ電流 IE (mA) current I E (mA) ISAHAYA ELECTRONICS　CORPORATION 　 〈Transistor〉 For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super　Mini type) 2SC5626 C o l l e c t o コレクタ・ベース時定数t i m e c o n s t a n t r to base －エミッタ電流特性 VS. Emitter current 100 VCB=5V f=31.8MHz Ta=25℃ 10 1 0.1 1.0 (mA) emitter エミッタ電流　I IEE(mA) current 10.0 ISAHAYA ELECTRONICS　CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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