2SC5807_07

〈Transistor〉 2SC5807 For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5807 is a silicon NPN epitaxial Transistor. It designed with high collector current and high collector dissipation. OUTLINE DRAWING 4.6 MAX 1.6 Unit：ｍｍ 1.5 FEATURE ●High collector current IC=5A ●Small collector to Emitter saturation voltage ●High collector dissipation PC=500mW 0.8 MIN VCE(sat)=0.25V TYP. (@IC=4A,IB=100mA) E C 0.53 MAX B 4 .2 MAX 2.5 0.4 0.48 MAX APPLICATION For storobe ,DC/DC convertor,power amplify apprication 1.5 3.0 MARKING TERMINAL CONNECTER Ｅ: EMITTER Ｃ: COLLECTOR Ｂ: BASE EIAJ : SC-62 JEDEC : Note) The dimension without tolerance represent central value. MARKING TYPE NAME ＡＫ Ｑ LOT No. ｈＦＥ ITEM MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VEBO VCEO I I C CM PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collecter current *1 Collector dissipation (Total、Ta=25℃) Collector dissipation (Total、Ta=25℃) *2 Junction temperature Storage temperature RATINGS 50 6 15 5 10 0.5 2 ＋150 -55∼＋150 UNIT V V V A PC Tj Tstg W ℃ ℃ *1 Single Pulse Pw=10msec *2 Pakkage mounted on 35mm×50mm×0.8mm ceramic board. ISAHAYA ELECTRONICS CORPORATION 〈Transistor〉 2SC5807 For strobe,DC/DC convertor Application Silicon NPN Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO ｈＦＥ VCE(sat) fT Cob PARAMETER C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product Collector output capacitance TESTCONDITIONS I C=50μA，I E=0mA I E=50μA，I C=0mA I C=1mA，RBE=∞ VCB=40V，I E =0mA VEB=5V，I C=0mA VCE=2V，IC=0.5A IC=4A，I B=100mA VCE=6V，IE=-50mA VCB=20V，IE=0mA，f=1MHz Marking ｈＦＥ Ｑ 120 to 270 120 0.25 150 30 Ｒ 180 to 390 LIMITS MIN 50 6 15 0.5 0.5 390 1.0 TYP MAX UNIT V V V μA μA V MHz pF * Measured using pulse current. * It shows ｈＦＥ classification in right table. TYPICAL CHARACTERISTICS COMMON EMITTER TRANSFER 10 VCE=2V COMMON EMITTER OUTPUT 5 20mA Ta=25℃ 15mA 25mA 10mA COLLECTER CURRENT ＩＣ（Ａ） 1 Ta=100℃ COLLECTER CURRENT ＩＣ（Ａ） 4 3 30mA 0.1 25℃ -25℃ 2 35mA 5mA 0.01 1 40∼50mA Pc=2W IB=0mA 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 BASE TO EMITTER VOLTAGE ＶＢＥ（Ｖ） 1.6 0 0 0.4 0.8 1.2 1.6 COLLECTER TO EMITTER VOLTAGE ＶＣＥ（Ｖ） 2 DC FORWARD CURRENT GAIN VS. COLLECTER CURRENT(Ⅰ) 10,000 DC FORWARD CURRENT GAIN ｈＦＥ 10,000 DC FORWARD CURRENT GAIN VS. COLLECTER CURRENT(Ⅱ) Ta=25℃ VCE=1V 1,000 VCE=5V DC FORWARD CURRENT GAIN ｈＦＥ 1,000 Ta=100℃ 2V 100 1V 25℃ 100 -25℃ 10 0.001 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） 10 10 0.001 0.01 0.1 1 COLLECTER CURRENT Ｉ Ｃ（Ａ） 10 ISAHAYA ELECTRONICS CORPORATION 〈Transistor〉 2SC5807 For strobe,DC/DC convertor Application Silicon NPN Epitaxial Type DC FORWARD CURRENT GAIN VS. COLLECTER CURRENT(Ⅲ) 10,000 VCE=2V COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅰ) 1 Ta=25℃ DC FORWARD CURRENT GAIN ｈＦＥ COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） 1,000 Ta=100℃ 0.1 IC/IB=50 40 25℃ 100 -25℃ 0.01 30 10 10 0.001 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） 10 0.001 0.001 0.01 0.1 1 COLLECTER CURRENT Ｉ Ｃ（Ａ） 10 COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅱ) COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅲ) 1 IC/IB=10 1 IC/IB=30 COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） 0.1 COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） 0.1 Ta=100℃ 0.01 Ta=100℃ 0.01 25℃ -25℃ 25℃ -25℃ 0.001 0.001 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） 10 0.001 0.001 0.01 0.1 1 COLLECTER CURRENT Ｉ Ｃ（Ａ） 10 COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅳ) COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅴ) 1 IC/IB=40 1 IC/IB=50 COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） 0.1 Ta=100℃ COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） 0.1 Ta=100℃ 0.01 25℃ -25℃ 0.01 25℃ -25℃ 0.001 0.001 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） 10 0.001 0.001 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） 10 ISAHAYA ELECTRONICS CORPORATION 〈Transistor〉 2SC5807 For strobe,DC/DC convertor Application Silicon NPN Epitaxial Type AREA OF SAFETY OPERATION 100 Ta=25℃ Single Pulse Mounted on recommended mount pad Pw=1msec Pw=10msec Pw=100mse COLLECTER CURRENT ＩＣ（Ａ） ICMAX(pulse) 10 ICMAX(pulse) 1 Pw=1sec 0.1 DC 0.01 0.1 1 10 100 COLLECTER TO EMITTER VOLTAGE ＶＣＥ（Ｖ） 1000 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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