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2SC5996B

2SC5996B

  • 厂商:

    ISAHAYA

  • 封装:

  • 描述:

    2SC5996B - SMALL-SIGNAL TRANSISTOR - Isahaya Electronics Corporation

  • 数据手册
  • 价格&库存
2SC5996B 数据手册
〈 SMALL-SIGNAL TRANSISTOR〉 2SC5996B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION ISAHAYA 2SC5996B is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application 2.1 0.425 0.425 U nit : mm ① FEATURE ・ High Emitter to Base voltage ・ High Reverse hFE ・ Low ON RESISTANCE. R ON = 0.75Ω ・ Small packege for mounting VEBO=40V ② ③ APPLICATION For muting, switching application JEITA SC-70 MAXIMUM RATINGS (Ta=25℃) Symbol V CBO V CEO V EBO I C TERMINAL  CONNECTOR       BASE     ①:       EMITTER     ②:       COLLECTOR     ③: Ratings 40 9 40 200 150 +125 -55 ∼ +125 Unit V V V mA mW ℃ ℃ MARKING Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temprature 0W PC Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol I I CBO EBO Parameter C ollector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain bandwidth product Collector output capacitance Test conditions Min Limits Typ Max Unit 0.1 0.1 μA μA mV MHz pF V CB=40V, I E =0mA V EB=40V, IC =0mA V CE =2V, I C =4mA h FE V CE(sat) fT C ob 7 00 25 150 3 .0 2 200 I C =30mA, I B=3mA V CE =6V, I C =4mA V CB=10V, I E =0mA, f=1MHz 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5996B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE COMMON EMITTER OUTPUT COMMON EMITTER TRANSFER 80 70 COLLECTOR CURRENT IC(mA) 50 60μA 60 50μA 50 40μA 40 30μA 30 20 10 0 0 1 2 3 4 5 6 7 8 9 20μA IB=10μA COLLECTOR CURRENT IC(mA) 40 Ta=25℃ VCE=2V 30 20 10 0 0 0.2 0.4 0.6 0.8 1 COLLECTOR TO EMITTER VOLTAGE VCE(V) BASE TO EMITTER VOLTAGE VBE(V) DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT 10000 DC REVERSE CURRENT GAIN hFER DC FORWARD CURRENT GAIN hFE Ta=25℃ VCE=2V 1000 10000 DC REVERSE CURRENT GAIN VS.COLLECTOR CURRENT Ta=25℃ VEC=2V 1000 100 100 10 0.1 1 COLLECTOR CURRENT 10 IC(mA) 100 10 0.1 1 EMITTER CURRENT 10 IE(mA) 100 COLLECTOR TO EMITTER SATURATION VOLTAGE VS, COLLECTOR CURRENT 1000 C TO E SATURATION VOLTAGE VCE(sat)(mV) Ta=25℃ IC/IB=10 ON RESISTANCE Ron(Ω) 100 10 ON RESISTANCE VS.BASE CURRENT Ta=25℃ 10 1 1 0.1 0.1 1 10 100 IC(mA) 1000 0.1 0.1 1 10 100 COLLECTOR CURRENT BASE CURRENT IB(mA) 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5996B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 1000 Ta=25℃ COLLECTOR OUTPUT CAPACITANCE COLLECTOR OUTPUT CAPACITANCE VS.COLLECTOR TO BASE VOLTAGE 100 VCE=6V GAIN BAND WIDTH PRODUCT fT(MHz) Ta=25℃ IE=0 f=1MHz Cob(pF) 100 10 10 -0.1 -1 -10 -100 1 0.1 1 10 100 EMITTER CURRENT IE(mA) COLLECTOR TO BASE VOLTAGE VCB(V) Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. N otes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , s uch as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003
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