ISA1235AC1MF

〈SMALL-SIGNAL TRANSISTOR〉 ISA1235AC1 ISA1602AM1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION ISA1235AC1 ISA1602AM1 is super mini package resin sealed silicon PNP epitaxial type transistor. These are designed for low frequency voltage amplify application . ISA1235AC1 2.5 1.5 OUTLINE DRAWING ISA1602AM1 2.1 0.425 1.2 0.425 0.4 2.0 1.3 0.65 0.65 UNIT：mm 0.5 0.5 2.9 1.9 0.95 0.95 FEATURE ・Excellent linearity of DC forward current gain. ・Small collector to emitter saturation voltage VCE(sat)=-0.3Vmax ① ② ③ ① ② ③ 0.16 APPLICATION For small type machine low frequency voltage amplify application. 0.8 0～0.1 JEITA：SC-59 JEDEC：TO-236 resemblance TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR 0.7 0～0.1 JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR MAXIMUM RATINGS（Ta=25℃） Symbol ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ ＰＣ Ｔｊ Ｔｓｔｇ Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings ISA1235AC1 ISA1602AM1 -60 -6 -50 -200 200 +150 -55～+150 UNIT V V V mA mW ℃ ℃ MARKING . MF hFE ITEM ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ Ｉ EＢＯ ｈＦＥ* ｈＦＥ ＶＣＥ（ｓａｔ） ｆＴ Cob NF Parameter Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain bandwidth product Collector output capacitance Noise Figure Test conditions I C=-100μA，RBE=∞ VCB=-60V，I E =0 VEB=-6V，I C =0 VCE=-6V，I C =-1mA VCE=-6V，I C =-0.1mA I C =-100mA，I B =-10mA VCE=-6V，I E =10mA VCB=-6V，I E =0,f=1MHz VCE=-6V，I E =0.3mA， f=100Hz，RG=10kΩ Min -50 Limits Ave Max -0.1 -0.1 500 -0.3 200 4.0 20 E 150～300 UNIT V μA μA － － V MHz pF dB F 250～500 150 90 *：It shows hFE classification in below table. ｈFE ISAHAYA ELECTRONICS CORPORATION 0.15 1.1 0.9 0.3 〈SMALL-SIGNAL TRANSISTOR〉 ISA1235AC1 ISA1602AM1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS COMMON EMITTER OUTPUT 50 IB=0.20mA COMMON EMITTER TRANSFER -50 IB=0.18mA IB=0.16mA IB=0.14mA IB=0.12mA IB=0.10mA VCE=-6V 40 COLLECTOR CURRENT IC(mA) -40 COLLECTOR CURRENT IC[mA] 5 30 IB=0.08mA IB=0.06mA -30 20 IB=0.04mA 10 -20 IB=0.02mA -10 IB=0 0 0 1 2 3 4 COLLECTOR・EMITTER VOLTAGE VCE(V) -0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE TO EMITTER VOLTAGE VBE[V] DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 1000 DC FORWARD CURRENT GAIN hFE GAIN BAND WIDTH PRODUCT fT[MHz] 400 VCE=-6V 100(@IC--1mA) VCE=-6V 300 100 200 100 10 -0.1 0 -1 -10 -100 -1000 0.1 1 10 100 COLLECTOR CURRENT IC[mA] EMITTER CURRENT IE[mA] COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob[pF] 250 COLLECTOR DISSIPATION Pc[mW] 200 10 150 100 1 50 0 -0.1 0 -1 -10 -100 0 50 100 150 COLLECTOR TO BASE VOLTAGE VCB[V] AMBIENT TEMPERATURE Ta[℃] ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISA1235AC1 ISA1602AM1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. N otes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2007