RT1A3906-T122

〈SMALL-SIGNAL TRANSISTOR〉 RT1A3906-T122 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) DESCRIPTION RT1A3906 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. 0.5 OUTLINEDRAWING unit：ｍｍ 2.5 1.5 0.5 FEATURE 2.9 1.90 ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting ● Small collector to emitter saturation voltage. VCE(sat)=-0.4Vmax（@IC=-50mA、IB=-5mA） 0.95 1 0.95 2 3 APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. Terminal connection ①：Base ②：Emitter ③：Collector 0.8 0 ∼0.1 JEITA：SC-59 JEDEC ： TO-236resemble MAXIMUM RATINGS（Ta=25℃） Symbol VCBO VCEO VEBO I C Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings -60 -40 -6 200 150 ＋150 -55∼＋150 Unit V V V mA mW ℃ ℃ Marking Figure ２ Ｗ Pc Tj Tstg Abbreviation for Kind hFE Item ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX ｈFE V CE (sat) V BE (sat) ｆT Cob C C E to to to E B B Parameter break break break cut down down down off cut off voltage voltage voltage Test conditions Ic=-1mA,RBE=∞ Ic=-10μA,IE=0 IE =-10μA,IC=0 VCE=-30V,VEB=-3V VCE=-30V,VEB=-3V VCE=-1V,IC=-10mA Ic=-50mA,I B=-5mA Ic=-50mA,I B=-5mA VCE=-20V, I C=-10mA ,f=100MHz VCB=-5V,IE=0,f=1MHz Limits Min -40 -60 -6 -50 -50 100 − − 250 − 300 -400 -950 − 5.0 Min Min 0.16 1.1 0.4 Unit V V V nA nA Base current current gain Collector DC C B to to forward E E current Saturation Saturation Voltage Voltage product mV mV MHz pF Gain bandwidth output Collector capacitance ISAHAYA ELECTRONICS CORPORATION R T1A3906-T122 COMMON EMITTER OUTPUT -70 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) -60 -50 -40 -30 -20 -10 IB=-50μA 0 -0 -0 0 -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE(V) -10 -0 0 -0.0 0 -200μA Ta=25℃ -250μA -50 COMMON EMITTER TRANSFER Ta=25℃ VCE=-1V -40 -30 -150μA -100μA -20 -10 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) -1.0 DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT 1000 DC FORWARD CURRENT GAIN hFE C TO E SATURATION VOLTAGE VCE(sat)(mV) Ta=25℃ VCE=-1V COLLECTOR EMITTER SATURATION VOLTAGE VS.COLLECTOR CURRENT -1000 Ta=25℃ IC/IB=10 100 -100 10 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) -100 -10 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) -100 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT GAIN BAND WIDTH PRODUCT fT(MHz) COLLECTOR OUTPUT CAPACITANCE Cob(pF) COLLECTOR OUTPUT CAPACITANCE VS.COLLECTOR TO BASE VOLTAGE 10 1000 Ta=25℃ VCE=-20V Ta=25℃ IE=0 f=1MHz 100 10 1 10 EMITTER CURRENT IE(mA) 100 1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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