RT1C3904-T12

PRELIMINARY Notice:this is not a final specification. Some parametric limits are subject to change. RT1C3904-T12 Transistor For General purpose Application Silicon NPN Epitaxial Type RT1C3904 is a one chip transistor. OUTLINE DRAWING UNIT:mm FEATURE ・Mini package for easy mounting. 0.5 2.5 1.5 0.5 APPLICATION General purpose transistor 1 2 3 MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL VCEO Collector to Emitter voltage VCBO VEBO IC Collector to Base voltage Emitter to Base voltage Collector current RATINGS 40 60 6.0 200 UNIT V V V mA Terminal Connector 1 2 3 : Base : Emitter : Collector EIAJ : SC-59 JEDEC : TO-236 resemblance THERMAL CHARACTERISTICS SYMBOL PD RθJA  PD RθJA  Tj Tstg Characteristics Total Device Dissipation Glass-Epoxi Board(1) Ta=25℃ Derate Adove 25℃ RATINGS 225 1.8 556 300 2.4 417 +150 -55 to +150 UNIT mW mW/℃ ℃/mW mW mW/℃ ℃/mW ℃ ℃ Equivalent Circuit  COLLECTOR BASE Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate(2)Ta=25℃ Derate Adove 25℃ Thermal Resistance Junction to Ambient Junction temperature Storage temperature  EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) LIMITS SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO I BL I CEX PARAMETER C to E break down voltage(3) C to B break down voltage E to B break down voltage Base cut off current Collector cut off current TESTCONDITIONS I C=1.0mA, I B=0 I C=10μA, I E=0 I C=10μA, I C=0 VCE=30V, V EB=3.0V VCE=30V, V EB=3.0V MIN 40 60 6 50 50 TYP MAX UNIT V V V nA nA 1.Glass-Epoxi=1.0×0.75×3.2in 2.Alumina=0.4×0.3×3.2 in 3.Pulse test ISAHAYA  ELECTRONICS  CORPORATION RT1C3904-T12 Transistor For General purpose Application Silicon NPN Epitaxial Type LIMITS SYMBOL hFE PARAMETER DC current gain TESTCONDITIONS I C=0.1mA, VCE=1.0V I C=1.0mA, VCE=1.0V I C=10mA, VCE=1.0V I C=50mA, VCE=1.0V I C=100mA, VCE=1.0V I C=10mA, IB=1.0mA I C=50mA, IB=5.0mA I C=10mA, IB=1.0mA I C=50mA, IB=5.0mA MIN 40 70 100 60 30 − − 0.65 − 300 − TYP MAX − − 300 − − 0.2 0.3 0.85 0.95 − 4.0 UNIT V CE(sat) V BE(sat) fT Cobo Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Output Capacitance Current Gain Bandwidth product  I C=10mA, VCE=20V,f=100MHz VCB=5V, IE=0,fT=1.0MHz V V V V MHz pF ISAHAYA  ELECTRONICS  CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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