RT1N141T

ＲＴ１Ｎ１４１Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N141X is a one chip transistor with built-in bias resistor,PNP type is RT1P141X. RT1N141U 1.6 OUTLINE DRAWING RT1N141C 2.5 UNIT：mm FEATURE ・Built-in bias resistor (R1=10kΩ,R2=10kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0～0.1 R1 B (IN) R2 C (OUT) JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector E (GND) RT1N141M RT1N141S 2.1 4.0 0.425 1.25 0.425 RT1N141T 0～0.1 Equivalent circuit 0.95 0.5 0.2 0.8 0.2 3.0 0.65 0.3 ① ② ③ 0.4 ① ② ③ 1.0 2.0 1.3 0.65 1.2 0.8 0.1 0.45 14.0 1.0 0.9 0.4 0.7 ① ② ③ 0～0.1 2.5 0.15 0.45 1.27 1.27 0.4 JEITA：－ JEDEC： Terminal Connector ①：Emitter ②：Collector ③：Base JEITA：SC-70 JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector ISAHAYA ELECTRONICS CORPORATION 0.25 0.4 ＲＴ１Ｎ１４１Ｘ SERIES MAXIMUM RATING (Ta=25℃) SYMBOL ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ Ｉ ＣＭ ＰＣ Ｔｊ Ｔｓｔｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N141T RT1N141U RATING RT1N141M 50 10 50 100 200 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type RT1N141C RT1N141S UNIT V V V mA mA 125（※） +125 -55～+125 150 200 +150 -55～+150 450 mW ℃ ℃ （※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） ＶＩ（ＯＮ） ＶＩ（ＯＦＦ） Ｒ１ Ｒ２／Ｒ１ ｆＴ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product TEST CONDITION I C=100μA，RBE=∞ VCB=50V，I E =0 VCE=5V，I C =10mA I C =10mA，I B =0.5mA VCE=0.2V，I C =5mA VCE=5V，I C =100μA MIN 50 50 0.1 1.5 1.1 10 1.0 200 0.3 3.0 13 1.1 LIMIT TYP MAX 0.1 UNIT V μA － V V V kΩ MHz 0.8 7.0 0.9 VCE=6V，I E =-10mA TYPICAL CHARACTERISTICS Input On Voltage - Collector Current 10 Input On Voltage　ＶＩ（ＯＮ） VCE=0.2V DC Forward Current Gain - Collector Current 1000 DC Forward Current Gain　ｈＦＥ VCE=5V 1 100 0.1 1 10 Collector Current　ＩＣ（ｍＡ） Collector Current - Input Off Voltage 1000 VCE=5V 100 10 1 10 Collector Current　ＩＣ（ｍＡ） 100 Collector Current ＩＣ　（ｍＡ） 100 10 0.0 0.4 0.8 1.2 1.6 2.0 Input Off Voltage　ＶＩ（ＯＦＦ）（Ｖ） ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , s uch as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003