RT1N14BX

ＲＴ１Ｎ１４ＢＸ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N14BX is a one chip transistor with built-in bias resistor,PNP type is RT1P14BX. RT1N14BU 1.6 OUTLINE DRAWING RT1N14BC 2.5 UNIT：mm FEATURE ・Built-in bias resistor (R2=10kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0～0.1 C (OUT) B (IN) JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector RT1N14BM 2.1 0.425 1.25 0.425 JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector RT1N14BS 4.0 R2 E (GND) 0.65 0.3 3.0 0～0.1 Equivalent circuit 0.95 0.5 ① ② ③ 2.0 1.3 14.0 1.0 1.0 0.1 0.45 0.65 1.27 1.27 0.9 0.15 0.4 2.5 ① ② ③ 0.7 JEITA：SC-70 JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 0～0.1 JEITA：－ JEDEC：－ Terminal Connector ①：Emitter ②：Collector ③：Base ISAHAYA ELECTRONICS CORPORATION 0.4 ＲＴ１Ｎ１４ＢＸ SERIES MAXIMUM RATING (Ta=25℃) SYMBOL ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ Ｉ ＣＭ ＰＣ Ｔｊ Ｔｓｔｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N14BU 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type 150 +150 -55～+150 RATING UNIT RT1N14BM RT1N14BC RT1N14BS 50 V 6 V 50 V 100 mA 200 mA  200      450      mW +150 ℃ -55～+150 ℃ LIMIT TYP ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） Ｒ2 ｆＴ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Emitter-base resistance Gain band width product TEST CONDITION I C=100μA，RBE=∞ VCB=50V，I E =0 VCE=5V，I C =5mA I C =10mA，I B =0.5mA VCE=6V，I E MIN 50 30 7 MAX 0.1 0.3 13 UNIT V μA － V kΩ MHz =-10mA 10 200 TYPICAL CHARACTERISTICS DC forward current gain-Collector current 1000 VCE=5V Collector current-Input off voltage 1000 VCE=5V DC forward current gain hFE 100 Collector current IC[uA] 1 10 Collector current IC[mA] 100 100 10 10 0 0.5 1 Input off voltage VI(OFF)[V] 1.5 2 Input on voltage-Collector current 10 VCE=200mV Input on voltage VI(ON)[V] 1 0.1 0.1 1 10 100 Collector current IC[mA] ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , s uch as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003