RT1N151S

Ｒ １ １ １ SERIES ＴＮ５Ｘ 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N151X is a one chip transistor with built-in bias resistor,PNP type is RT1P151X. RT1N151U 1.6 OUTLINE DRAWING       UNIT：m      m RT1N151C 2.5 0.4 0.5 1.5 0.5 FEATURE ・ Built-in bias resistor (R1=100kΩ,R2=100kΩ). 0.5 0.4 0.8 0.3 ① ② ③ 2.9 1.90 0.95 0.95 ① ② ③ 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0∼0.1 R1 B (IN) R2 C (OUT) JEITA ：− JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1N151M 2.1 0.425 1.25 0.425          JEITA ：SC-59 JEDEC ：Similar to TO-236 Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1N151S 4.0 E (GND) 2.0 1.3 0.65 0.65 0.3 3.0 0∼0.1 Equivalent circuit 0.5 ① ② ③ 14.0 1.0 1.0 0.1 0.45 1.27 1.27 0.9 0.15 0.4 2.5 ① ② ③ 0.7 JEITA ：SC-70 JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector 0∼0.1 JEITA ：− JEDEC ：− Terminal Connector ① ：Emitter ② ：Collector ③ ：Base ISAHAYA  ELECTRONICS  CORPORATION 0.4 Ｒ １ １ １ SERIES ＴＮ５Ｘ MAXIMUM RATING (Ta=25℃) SYMBOL Ｖ ＢＯ Ｃ Ｖ ＢＯ Ｅ Ｖ ＥＯ Ｃ ＩＣ   ＩＣＭ   Ｐ Ｃ Ｔ ｊ Ｔｔ ｓｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N151U RATING RT1N151M RT1N151C 50 10 50 100 200 200 +150 -55∼+150 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type RT1N151S UNIT V V V mA mA mW ℃ ℃ LIMIT TYP 150 +150 -55∼+150 450 ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ ＢＲ）ＣＥＯ （ ＩＣＢＯ   ｈＥ Ｆ Ｖ Ｅ ｓｔ Ｃ （ ａ） Ｖ（ Ｎ ＩＯ ） Ｖ（ Ｆ ） ＩＯ Ｆ Ｒ １ Ｒ ／Ｒ１ ２ ｆ Ｔ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product TEST CONDITION I C=100μA，RBE=∞ VCB=50V，I E =0 VCE=5V，I C =5mA I C =5mA，I B =0.25mA VCE=0.2V，I C =5mA VCE=5V，I C =100μA MIN 50 82 0.1 2.4 1.1 100 1.0 200 0.3 8.8 MAX 0.1 UNIT V μA − V V V kΩ MHz 0.8 0.8 1.2 VCE=6V，I E =-10mA TYPICAL CHARACTERISTICS INPUT ON VOLTAGE VS.COLLECTOR CURRENT D C F O R W A R D C U R R E N T G A IN VS.COLLECTOR CURRENT 10 DC FORWARD CURRENT GAIN  Ｆ ｈＥ INPUT ON VOLTEGE  I(ON)（ ） Ｖ Ｖ 1000 VCE=0.2V VCE=5V 1 100 0.1 1 10 100 COLLECTOR CURRENT  Ｃ（ ） Ｉ ｍＡ COLLECTOR CURRENT VS.INPUT OFF VOLTAGE 10 1 10 100 COLLECTOR CURRENT Ｃ（ ） Ｉ ｍＡ 1000 COLLECTOR CURRENT  Ｃ μＡ Ｉ（ ） VCE=5V 100 10 0 0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE  ＩＯＦ ） Ｖ Ｖ（ Ｆ （ ） 2 ISAHAYA  ELECTRONICS  CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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