RT1N230T

ＲＴ１Ｎ２３０Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N230X is a one chip transistor with built-in bias resistor, PNP type is RT1P230X. 0.4 OUTLINE RT1N230U 1.6 0.8 0.4 DRAWING RT1N230C 2.5 1.5 0.5 UNIT：mm 0.5 0.95 0.5 0.95 ・Built-in bias resistor (R1=2.2kΩ) 1.6 1.0 2.9 1.90 ① ② ③ 0.3 FEATURE ① ② ③ APPLICATION 1.1 0.5 Equivalent circuit C (OUT) R1 B (IN) JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 0～0.1 JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector E (GND) RT1N230M RT1N230S 4.0 0.425 2.1 1.25 0.425 RT1N230T 0.2 0.8 0.2 0～0.1 Inverted circuit, switching circuit, interface circuit, driver circuit. 0.7 0.55 0.15 0.8 0.16 0.4 0.65 1.0 2.0 1.3 0.4 0.1 0.45 1.2 0.8 ① ② ③ 0.3 ① ② ③ 14.0 0.65 1.0 1.27 1.27 0.9 0.4 0.7 0.15 ① ② ③ JEITA：－ JEDEC：－ Terminal Connector ①：Emitter ②：Collector ③：Base JEITA：SC-70 JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 0～0.1 2.5 0.45 JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector ISAHAYA ELECTRONICS CORPORATION 0.25 3.0 0.4 ＲＴ１Ｎ２３０Ｘ SERIES MAXIMUM RATING (Ta=25℃) SYMBOL ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ Ｉ ＣＭ ＰＣ Ｔｊ Ｔｓｔｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N230T RT1N230U RATING RT1N230M 50 6 50 100 200 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type RT1N230C RT1N230S UNIT 125 （※ ） +125 -55～+125 150 200 +150 -55～+150 450 V V V mA mA mW ℃ ℃ （※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） Ｒ１ ｆＴ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product TEST CONDITION I C=100μA，RBE=∞ VCB=50V，I E =0 VCE=5V，I C =1mA I C =10mA，I B =0.5mA VCE=6V，I E MIN 50 100 1.5 LIMIT TYP MAX 0.1 0.3 2.8 UNIT V μA － V kΩ MHz =-10mA 2.2 200 TYPICAL CHARACTERISTICS I NP UT O N VO LTAGE VS .CO LLECTO R CUR R ENT 10 INPUT ON VOLTEGE　ＶI(ON)（Ｖ） DC FORWARD CURRENT GAIN　ｈ ＦＥ DC FO RWAR D CURRENT GAI N V S .CO LL ECTO R CURRENT 1000 VCE=5V VCE=0.2V 1 100 0.1 0.1 1 10 COLLECTOR CURRENT　Ｉ Ｃ（ｍＡ） C O L LECTO R CUR R ENT VS .I NP UT O FF VO LTA GE 1000 VCE=5V COLLECTOR CURRENT　Ｉ Ｃ（μＡ） 10 100 0.1 1 10 COLLECTOR CURRENT　ＩＣ（ｍＡ） 100 100 10 0 0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE　ＶＩ（ＯＦＦ） （Ｖ） 2 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , s uch as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003