RT1N241S

Ｒ １ ２ １ SERIES ＴＮ４Ｘ 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N241X is a one chip transistor with built-in bias resistor,PNP type is RT1P241X. RT1N241U 1.6 OUTLINE DRAWING       UNIT：m      m RT1N241C 2.5 0.4 0.5 1.5 0.5 FEATURE ・ Built-in bias resistor (R1=22kΩ,R2=22kΩ). 0.5 0.4 0.8 0.3 ① ② ③ 2.9 1.90 0.95 0.95 ① ② ③ 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0∼0.1 R1 B (IN) R2 C (OUT) JEITA ：− JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1N241M 2.1 0.425 1.25 0.425       JEITA ：SC-59 JEDEC ：Similar to TO-236 Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1N241S 4.0 E (GND) 2.0 1.3 0.65 0.65 0.3 3.0 0∼0.1 Equivalent circuit 0.5 ① ② ③ 14.0 1.0 1.0 0.1 0.45 1.27 1.27 0.9 0.15 0.4 2.5 ① ② ③ 0.7 JEITA ：SC-70 JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector 0∼0.1 JEITA ：− JEDEC ：− Terminal Connector ① ：Emitter ② ：Collector ③ ：Base ISAHAYA  ELECTRONICS  CORPORATION 0.4 Ｒ １ ２ １ SERIES ＴＮ４Ｘ MAXIMUM RATING (Ta=25℃) SYMBOL Ｖ ＢＯ Ｃ Ｖ ＢＯ Ｅ Ｖ ＥＯ Ｃ ＩＣ   ＩＣＭ   Ｐ Ｃ Ｔ ｊ Ｔｔ ｓｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N241U RATING RT1N241M RT1N241C 50 10 50 100 200 200 +150 -55∼+150 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type RT1N241S UNIT V V V mA mA mW ℃ ℃ LIMIT TYP 150 +150 -55∼+150 450 ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ ＢＲ）ＣＥＯ （ ＩＣＢＯ   ｈＥ Ｆ Ｖ Ｅ ｓｔ Ｃ （ ａ） Ｖ（ Ｎ ＩＯ ） Ｖ（ Ｆ ） ＩＯ Ｆ Ｒ １ Ｒ ／Ｒ１ ２ ｆ Ｔ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product TEST CONDITION I C=100μA，RBE=∞ VCB=50V，I E =0 VCE=5V，I C =5mA I C =10mA，I B =0.5mA VCE=0.2V，I C =5mA VCE=5V，I C =100μA MIN 50 50 0.1 1.8 1.1 22 1.0 200 0.3 3.0 28 1.1 MAX 0.1 UNIT V μA − V V V kΩ MHz 0.8 16 0.9 VCE=6V，I E =-10mA Input on voltage-collector current Input on voltage ＶＩ（ＯＮ）（Ｖ） 10 DC forward gain current-collector current RT1N241 現行RT1N241 DC forward gain current ｈＦＥ 1000 1 RT1N241 現行RT1N241 0.1 1 10 colector curent Ｃ ｍＡ Ｉ（ ） collector current - Input on voltage 100 100 10 1 10 collector current Ｃ ｍＡ Ｉ（ ） 100 collector current ＩＣ （ｍＡ） 1000 RT1N241 現行RT1N241 100 10 0.0 0.4 0.8 1.2 1.6 Input off voltage  Ｉ Ｆ （ ） Ｖ（ ＯＦ ） Ｖ 2.0 ISAHAYA  ELECTRONICS  CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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