RT1N430S

ＲＴ１Ｎ４３０Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N430X is a one chip transistor with built-in bias resistor, PNP type is RT1P430X. 0.4 OUTLINE RT1N430U 1.6 0.8 0.4 DRAWING RT1N430C 2.5 1.5 0.5 UNIT：mm 0.5 0.95 0.5 0.95 ・Built-in bias resistor (R1=4.7kΩ) 1.6 1.0 2.9 1.90 ① ② ③ 0.3 FEATURE ① ② ③ APPLICATION 1.1 0.5 Equivalent circuit C (OUT) R1 B (IN) JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 0～0.1 JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector E (GND) RT1N430M RT1N430S 4.0 0.425 2.1 1.25 0.425 RT1N430T 0.2 0.8 0.2 0～0.1 Inverted circuit, switching circuit, interface circuit, driver circuit. 0.7 0.55 0.15 0.8 0.16 0.4 0.65 1.0 2.0 1.3 0.4 0.1 0.45 1.2 0.8 ① ② ③ 0.3 ① ② ③ 14.0 0.65 1.0 1.27 1.27 0.9 0.4 0.7 0.15 ① ② ③ JEITA：－ JEDEC：－ Terminal Connector ①：Emitter ②：Collector ③：Base JEITA：SC-70 JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 0～0.1 2.5 0.45 JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector ISAHAYA ELECTRONICS CORPORATION 0.25 3.0 0.4 ＲＴ１Ｎ４３０Ｘ SERIES MAXIMUM RATING (Ta=25℃) SYMBOL ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ Ｉ ＣＭ ＰＣ Ｔｊ Ｔｓｔｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N430T RT1N430U 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type 125 （※ ） +125 -55～+125 150 RATING RT1N430M RT1N430C 50 6 50 100 200 200 +150 -55～+150 RT1N430S UNIT 450 V V V mA mA mW ℃ ℃ （※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） Ｒ１ ｆＴ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product TEST CONDITION I C=100μA，RBE=∞ VCB=50V，I E =0 VCE=5V，I C =1mA I C =10mA，I B =0.5mA VCE=6V，I E MIN 50 100 3.3 LIMIT TYP MAX 0.1 UNIT V μA － V kΩ MHz =-10mA 0.1 4.7 200 0.3 6.1 TYPICAL CHARACTERISTICS Input on voltage - Collector current 10 DC forward gain current - Collector current 1000 VCE=0.2V Input on voltage　　VI(ON) (V) DC forward gain current　hFE VCE=5V 1 100 0.1 0.1 1 10 Collector current Ic (mA) 100 10 0.1 1 10 Collector current 　Ic(mA) 100 Collector current -Input off voltage 1000 VCE=5V Collector current 　Ic (uA) 100 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Input off voltage　VI(OFF) (V) 1.6 1.8 2 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , s uch as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003