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RT1N441C

RT1N441C

  • 厂商:

    ISAHAYA

  • 封装:

  • 描述:

    RT1N441C - Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type - Isahaya E...

  • 数据手册
  • 价格&库存
RT1N441C 数据手册
RT1N441X SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N441X is a one chip transistor with built-in bias resistor,PNP type is RT1P441X. RT1N441U 1.6 OUTLINE DRAWING RT1N441C 2.5 UNIT:mm FEATURE ・Built-in bias resistor (R1=47kΩ,R2=47kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0~0.1 R1 B (IN) R2 C (OUT) JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector JEITA:SC-59 JEDEC:Similar to TO-236 Terminal Connector ①:Base ②:Emitter ③:Collector E (GND) RT1N441M RT1N441T 2.1 0.425 0.2 0.8 0.2 1.25 0.425 3.0 RT1N441S 4.0 0.65 0.3 0~0.1 Equivalent circuit 0.95 0.5 0.25 ① ② ③ 0.4 2.0 1.3 14.0 1.0 ① ② ③ 1.0 0.1 0.45 0.4 0.65 1.2 0.8 1.27 1.27 0.9 0.15 0.4 2.5 ① ② ③ 0. 5 0.7 JEITA、JEDEC:ISAHAYA:T-USM Terminal Connector ①:Base ②:Emitter ③:Collector JEITA:SC-70 JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector 0~0.1 JEITA:- JEDEC:- Terminal Connector ①:Emitter ②:Collector ③:Base ISAHAYA ELECTRONICS CORPORATION 0.4 RT1N441X SERIES MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO VIN IC I CM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Input voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N441T RT1N441U 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type 125(※) +125 -55~+125 150 RATING RT1N441M RT1N441C 50 10 50 40 100 200 200 +150 -55~+150 RT1N441S UNIT V V V V mA mA mW ℃ ℃ 450 (※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL V(BR)CEO I CBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product Input on voltage -Collector current 10 DC forward current gain hFE Input on voltage VI(ON) VCE=0.2V 1000 VCE=5V TEST CONDITION I C=100μA,RBE=∞ VCB=50V,I E =0 VCE=5V,I C =5mA I C =10mA,I B =0.5mA VCE=0.2V,I C =5mA VCE=5V,I C =100μA MIN 50 50 LIMIT TYP MAX 0.1 UNIT V μA - V V V kΩ MHz 0.8 33 0.9 VCE=6V,I E =-10mA 0.1 2.2 1.1 47 1.0 200 0.3 5.0 61 1.1 DC forward current gain -Collector current 1 100 0.1 1 10 Collector current IC(mA) Collector current - Input off voltage IC (mA) 10 100 1 10 Collector current IC(mA) 100 1000 VCE=5V Collector current 100 10 0.0 0.4 0.8 1.2 1.6 2.0 Input of voltage VI(OFF)(V) ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. N otes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , s uch as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003
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