RT1P140S

ＲＴ１P１４０Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P140X is a one chip transistor with built-in bias resistor,NPN type is RT1N140X. RT1P140U 1.6 OUTLINE DRAWING RT1P140C 2.5 UNIT：mm FEATURE ・Built-in bias resistor (R1=10kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0～0.1 R1 B (IN) C (OUT) JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector E (GND) RT1P140M RT1P140S 4.0 0.425 3.0 2.1 1.25 0.425 RT1P140T 0～0.1 Equivalent circuit 0.95 0.5 0.2 0.8 0.2 0.65 0.3 0.4 1.0 1.0 2.0 1.3 0.65 1.2 0.8 0.1 0.45 ① ② ③ ① ② ③ 14.0 0.9 2.5 0.4 0.7 ① ② ③ JEITA：－ JEDEC：－ Terminal Connector ①：Emitter ②：Collector ③：Base JEITA：SC-70 JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 0～0.1 0.15 0.45 1.27 1.27 ISAHAYA ELECTRONICS CORPORATION 0.4 JEITA：-, JEDEC：－ ISAHAYA：－ Terminal Connector ①：Base ②：Emitter ③：Collector 0.25 0.4 ＲＴ１P１４０Ｘ SERIES MAXIMUM RATING (Ta=25℃) SYMBOL ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ Ｉ ＣＭ ＰＣ Ｔｊ Ｔｓｔｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type RATING RT1P140M RT1P140C RT1P140S -50 -6 -50 -100 -200 125（※）      150            200            450 +125 +150 -55～+125 -55～+150 RT1P140T RT1P140U （※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate. UNIT V V V mA mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） Ｒ１ ｆＴ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product TEST CONDITION I C=-100μA，RBE=∞ VCB=-50V，I E =0 VCE=-5V，I C =-1mA I C =-10mA，I B =-0.5mA VCE=-6V，I E MIN -50 100 7 LIMIT TYP MAX -0.1 -0.3 13 UNIT V μA － V kΩ MHz =10mA 10 150 TYPICAL CHARACTERISTICS Input on voltage - Collectorcurrent 1000 DC forward current gain - Collector current -10 VCE=-0.2V Input on voltage　VI(ON) (V) DC forward current gain　hFE VCE=-5V -1 100 -0.1 -0.1 -1 -10 Collector current　Ic (mA) -100 10 -0.1 -1 -10 Collector current　Ic(mA) -100 Collector voltage - Input off voltage -1000 VCE=-5V Collector current　Ic (uA) -100 -10 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Input off voltage　VI(OFF) (V) -1.6 -1.8 -2 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , s uch as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003