RT1P150X

ＲＴ１P１５０Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P150X is a one chip transistor with built-in bias resistor,NPN type is RT1N150X. RT1P150U 1.6 OUTLINE DRAWING RT1P150C 2.5 UNIT：mm FEATURE ・Built-in bias resistor (R1=100kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0～0.1 R1 B (IN) C (OUT) JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector RT1P150M 2.1 0.425 1.25 0.425 JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector RT1P150S 4.0 E (GND) 0.65 0.3 3.0 0～0.1 Equivalent circuit 0.95 0.5 ① ② ③ 2.0 1.3 14.0 1.0 1.0 0.1 0.45 0.65 1.27 1.27 0.9 0.15 0.4 2.5 ① ② ③ 0.7 JEITA：SC-70 JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 0～0.1 JEITA：－ JEDEC：－ Terminal Connector ①：Emitter ②：Collector ③：Base ISAHAYA ELECTRONICS CORPORATION 0.4 ＲＴ１P１５０Ｘ SERIES MAXIMUM RATING (Ta=25℃) SYMBOL ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ Ｉ ＣＭ ＰＣ Ｔｊ Ｔｓｔｇ 〈Transistor〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type RATING UNIT RT1P150M RT1P150C RT1P150S Collector to Base voltage -50 V Emitter to Base voltage -6 V Collector to Emitter voltage -50 V Collector current -100 mA Peak Collector current -200 mA Collector dissipation(Ta=25℃)      150            200            450     mW Junction temperature +150 +150 ℃ Storage temperature -55～+150 -55～+150 ℃ PARAMETER RT1P150U LIMIT TYP ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） Ｒ１ ｆＴ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product TEST CONDITION I C=-100μA，RBE=∞ VCB=-50V，I E =0 VCE=-5V，I C =-1mA I C =-1mA，I B =-0.1mA VCE=-6V，I E MIN -50 100 MAX -0.1 -0.3 UNIT V μA － V kΩ MHz =10mA 100 150 DC forward current gain-Collector current 1000 VCE=-5V Collector current-Input off voltage -1000 VCE=-5V DC forward current gain hFE Collector current IC[uA] 100 -100 10 -1 -10 Collector current IC[mA] -100 -10 -0 -0.5 -1 -1.5 -2 Input off voltage VI(OFF)[V] Input on voltage-Collector current -10 VCE=-200mV Input on voltage VI(ON)[V] -1 -0.1 -0.1 -1 -10 -100 Collector current IC[mA] ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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