RT1P240S

Ｒ １ ４ Ｘ SERIES Ｔ P２ ０ 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P240X is a one chip transistor with built-in bias resistor,NPN type is RT1N240X. RT1P240U 1.6 OUTLINE DRAWING       UNIT：m      m RT1P240C 2.5 0.4 0.5 1.5 0.5 FEATURE ・ Built-in bias resistor (R1=22kΩ). 0.5 0.4 0.8 0.3 ① ② ③ 2.9 1.90 0.95 0.95 ① ② ③ 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0∼0.1 R1 B (IN) C (OUT) JEITA ：− JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1P240M 2.1 0.425 1.25 0.425    JEITA   ：SC-59 JEDEC ：Similar to TO-236 Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1P240S 4.0 E (GND) 2.0 1.3 0.65 0.65 0.3 3.0 0∼0.1 Equivalent circuit 0.5 ① ② ③ 14.0 1.0 1.0 0.1 0.45 1.27 1.27 0.9 0.15 0.4 2.5 ① ② ③ 0.7 JEITA ：SC-70 JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector 0∼0.1 JEITA ：− JEDEC ：− Terminal Connector ① ：Emitter ② ：Collector ③ ：Base ISAHAYA  ELECTRONICS  CORPORATION 0.4 Ｒ １ ４ Ｘ SERIES Ｔ P２ ０ MAXIMUM RATING (Ta=25℃) SYMBOL Ｖ ＢＯ Ｃ Ｖ ＢＯ Ｅ Ｖ ＥＯ Ｃ ＩＣ   ＩＣＭ   Ｐ Ｃ Ｔ ｊ Ｔｔ ｓｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1P240U RATING RT1P240M RT1P240C -50 -6 -50 -100 -200 200 +150 -55∼+150 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type RT1P240S UNIT V V V mA mA mW ℃ ℃ LIMIT TYP 150 +150 -55∼+150 450 ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ ＢＲ）ＣＥＯ （ ＩＣＢＯ   ｈＥ Ｆ Ｖ Ｅ ｓｔ Ｃ （ ａ） Ｒ １ ｆ Ｔ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product Input on voltage - collector voltage -10 1000 TEST CONDITION I C=-100μA，RBE=∞ VCB=-50V，I E =0 VCE=-5V，I C =-1mA I C =-10mA，I B =-0.5mA VCE=-6V，I E =10mA DC forward current gain-collector voltage MIN -50 100 15 MAX -0.1 -0.3 29 UNIT V μA − V kΩ MHz 22 150 VCE=-0.2V DC forward current gain  hFE Input on voltage  VI(ON) (V) VCE=-5V -1 100 -0.1 -0.1 -1 -10 -100 10 -0.1 -1 -10 -100 collector voltage  (mA) Ic collector voltage  Ic(mA) collector voltage-Input off voltage -1000 VCE=-5V collector voltage  (uA) Ic -100 -10 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 Input off voltage  VI(OFF) (V) ISAHAYA  ELECTRONICS  CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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