RT1P431S

Ｒ １ ４ １ SERIES ＴＰ３Ｘ Semiconductor 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P431X is a one chip transistor with built-in bias resistor,NPN type is RT1N431X. RT1P431U 1.6 OUTLINE DRAWING       UNIT：m      m RT1P431C 2.5 0.4 0.5 1.5 0.5 FEATURE ・ Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). 0.5 0.4 0.8 0.3 ① ② ③ 2.9 1.90 0.95 0.95 ① ② ③ 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0∼0.1 R1 B (IN) R2 C (OUT) EIAJ ：− JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1P431M 2.1 0.425 1.25 0.425 EIAJ ：SC-59 JEDEC ：Similar to TO-236 Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1P431S 4.0 E (GND) 2.0 1.3 0.65 0.65 0.3 3.0 0∼0.1 Equivalent circuit 0.5 ① ② ③ 14.0 1.0 1.0 0.1 0.45 1.27 1.27 0.9 0.15 0.4 2.5 ① ② ③ 0.7 EIAJ ：SC-70 JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector 0∼0.1 EIAJ ：− JEDEC ：− Terminal Connector ① ：Emitter ② ：Collector ③ ：Base ISAHAYA  ELECTRONICS  CORPORATION 0.4 Ｒ １ ４ １ SERIES ＴＰ３Ｘ MAXIMUM RATING (Ta=25℃) SYMBOL Ｖ ＢＯ Ｃ Ｖ ＢＯ Ｅ Ｖ ＥＯ Ｃ ＩＣ   ＩＣＭ   Ｐ Ｃ Ｔ ｊ Ｔｔ ｓｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1P431U RATING RT1P431M RT1P431C -50 -10 -50 -100 -200 200 +150 -55∼+150 MITSUBISHI Semiconductor 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type RT1P431S UNIT V V V mA mA mW ℃ ℃ LIMIT TYP 150 +150 -55∼+150 450 ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ ＢＲ）ＣＥＯ （ ＩＣＢＯ   ｈＥ Ｆ Ｖ Ｅ ｓｔ Ｃ （ ａ） Ｖ（ Ｎ ＩＯ ） Ｖ（ Ｆ ） ＩＯ Ｆ Ｒ １ Ｒ ／Ｒ１ ２ ｆ Ｔ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product TEST CONDITION I C=-100μA，RBE=∞ VCB=-50V，I E =0 VCE=-5V，I C =-10mA I C =-10mA，I B =-0.5mA VCE=-0.2V，I C =-5mA VCE=-5V，I C =-100μA MIN -50 20 -0.1 -1.4 -1.1 4.7 1.0 150 -0.3 -2.3 6.1 1.2 MAX -0.1 UNIT V μA − V V V kΩ MHz -0.8 3.3 0.8 VCE=-6V，I E =10mA TYPICAL CHARACTERISTICS INPUT ON VOLTAGE VS.COLLECTOR CURRENT D C F O R W A R D C U R R E N T G A IN VS.COLLECTOR CURRENT -10 DC FORWARD CURRENT GAIN  Ｆ ｈＥ INPUT ON VOLTEGE  I(ON)（ ） Ｖ Ｖ 1000 VCE=-0.2V VCE=-5V -1 100 -0.1 -1 -10 -100 COLLECTOR CURRENT  Ｃ（ ） Ｉ ｍＡ COLLECTOR CURRENT VS.INPUT OFF VOLTAGE 10 -1 -10 -100 COLLECTOR CURRENT Ｃ（ ） Ｉ ｍＡ -1000 COLLECTOR CURRENT  Ｃ μＡ Ｉ（ ） VCE=-5V -100 -10 0 -0.4 -0.8 -1.2 -1.6 -2 INPUT OFF VOLTAGE  ＩＯＦ ） Ｖ Ｖ（ Ｆ （ ） ISAHAYA  ELECTRONICS  CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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