RT1P440U

Ｒ １ ４ Ｘ SERIES Ｔ P４ ０ 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P440X is a one chip transistor with built-in bias resistor,NPN type is RT1N440X. RT1P440U 1.6 OUTLINE DRAWING       UNIT：m      m RT1P440C 2.5 0.4 0.5 1.5 0.5 FEATURE ・ Built-in bias resistor (R1=47kΩ). 0.5 0.4 0.8 0.3 ① ② ③ 2.9 1.90 0.95 0.95 ① ② ③ 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0∼0.1 R1 B (IN) C (OUT) JEITA ：− JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1P440M 2.1 0.425 1.25 0.425  JEITA ：SC-59 JEDEC ：Similar to TO-236 Terminal Connector ① ：Base ② ：Emitter ③ ：Collector RT1P440S 4.0 E (GND) 2.0 1.3 0.65 0.65 0.3 3.0 0∼0.1 Equivalent circuit 0.5 ① ② ③ 14.0 1.0 1.0 0.1 0.45 1.27 1.27 0.9 0.15 0.4 2.5 ① ② ③ 0.7 JEITA ：SC-70 JEDEC ：− Terminal Connector ① ：Base ② ：Emitter ③ ：Collector 0∼0.1 JEITA ：− JEDEC ：− Terminal Connector ① ：Emitter ② ：Collector ③ ：Base ISAHAYA  ELECTRONICS  CORPORATION 0.4 Ｒ １ ４ Ｘ SERIES Ｔ P４ ０ MAXIMUM RATING (Ta=25℃) SYMBOL Ｖ ＢＯ Ｃ Ｖ ＢＯ Ｅ Ｖ ＥＯ Ｃ ＩＣ   ＩＣＭ   Ｐ Ｃ Ｔ ｊ Ｔｔ ｓｇ PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1P440U RATING RT1P440M RT1P440C -50 -6 -50 -100 -200 200 +150 -55∼+150 〈 Transistor 〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type RT1P440S UNIT V V V mA mA mW ℃ ℃ LIMIT TYP 150 +150 -55∼+150 450 ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL Ｖ ＢＲ）ＣＥＯ （ ＩＣ Ｏ  Ｂ ｈＥ Ｆ Ｖ Ｅ ｓｔ Ｃ （ ａ） Ｒ １ ｆ Ｔ PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product Input on voltage-collector current -10 1000 TEST CONDITION I C=-100μA，RBE=∞ VCB=-50V，I E =0 VCE=-5V，I C =-1mA I C =-10mA，I B =-0.5mA VCE=-6V，I E =10mA MIN -50 100 33 MAX -0.1 -0.3 61 UNIT V μA − V kΩ MHz 47 150 DC forward current gain -collector current VCE=-0.2V DC forward current gain  hFE Input on voltage  VI(ON) (V) VCE=-5V -1 100 -0.1 -0.1 -1 -10 -100 10 -0.1 -1 -10 -100 collector current  (mA) Ic collector current  Ic(mA) collector current - Input off voltage -1000 VCE=-5V collector current  (uA) Ic -100 -10 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 Input off voltage  VI(OFF) (V) ISAHAYA  ELECTRONICS  CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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