RT3AMMM

PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION RT3AMMM is a composite transistor built with two 2SA1235A chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit：mm FEATURE Silicon pnp epitaxial type Each transistor elements are independent. Mini package for easy mounting 2.0 APPLICATION For low frequency amplify application 0.65 0.65 0～0.1 Tr1 Tr2 TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation（Total,Ta=25℃） Junction temperature Storage temperature RATING -60 -6 -50 -200 150 ＋125 -55～＋125 UNIT V V V mA mW ℃ ℃ 6 5 4 MARKING .AMM １ 2 3 ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)CEO ICBO IEBO hFE* hFE VCE(sat) fT Cob NF Parameter Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance Noise figure Test conditions IC=100μA,RBE=∞ VCB =-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1mA VCE=-6V,IC=-0.1mA IC=-100mA,IB=-10mA VCE=-6V,IE=10mA VCB=-6V,IE=0,f=1MHZ VCE=6V,IE=0.3mA,f=100HZ,RG=10kΩ item hFE Limits Min -50 150 90 Typ 200 4.0 E 150～300 Max -0.1 -0.1 500 -0.3 20 Unit V μA μA V MHZ pF dB * : It shows hFE classification in right table. F 250～500 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type COMMON EMITTER OUTPUT -50 0.18mA 0.16mA COLLECTOR CURRENT IC(mA) -40 -50 COMMON EMITTER TRANSFER Ta=25℃ 0.14mA 0.12mA COLLECTOR CURRENT IC(mA) -40 Ta=25℃ VCE=-6V -30 0.10mA 0.08mA -30 -20 0.06mA 0.04mA -20 -10 0.02mA IB=0 -10 -0 -0 -1 -2 -3 -4 -5 COLLECTOR EMITTER VOLTAGE VCE(V) -0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE TO EMITTER VOLTAGE VBE(V) DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 Ta=25℃ VCE=-6V 100(@IC=-1mA) 1000 250 Ta=25℃ VCE=-6V GAIN BAND WIDTH PRODUCT fT(MHz) 200 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE 150 100 100 10 50 1 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25℃ IE=0 f=1MHz 0 -1000 0.1 1 10 EMITTER CURRENT IE(mA) 100 10 1 0.1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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