RT3CLLM

PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type DESCRIPTION RT3CLLM is a compound transistor built with two 2SC3052 chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit：mm FEATURE Silicon npn epitaxial type Each transistor elements are independent. Mini package for easy mounting 2.0 APPLICATION For low frequency amplify application 0.65 0.65 0～0.1 Tr1 Tr2 TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC PC（Total） Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation（Ta=25℃） Junction temperature Storage temperature RATING 50 6 50 200 150 ＋125 -55～＋125 UNIT V V V mA mW ℃ ℃ 6 5 4 MARKING .C L L １ 2 3 ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)CEO ICBO IEBO hFE* hFE VCE(sat) fT Cob NF Parameter Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance Noise figure Test conditions IC=100μA,RBE=∞ VCB =50V,IE=0 VEB=6V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=0.1mA IC=100mA,IB=10mA VCE=6V,IE=-10mA VCB=6V,IE=0,f=1MHZ VCE=6V,IE=-0.1mA,f=1kHZ,RG=2kΩ Item hFE E 150～300 Limits Min 50 150 90 Typ 200 2.5 Max 0.1 0.1 800 0.3 15 Unit V μA μA V MHZ pF dB * : It shows hFE classification in right table. F 250～500 G 400～800 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type TYPICAL CHARACTERISTICS COMMON EMITTER OUTPUT 50 0.16mA 50 0.14mA 0.12mA 0.10mA 30 0.08mA 0.06mA 0.04mA 10 0.02mA IB=0 0 0 1 2 3 4 5 COLLECTOR EMITTER VOLTAGE VCE(V) Ta=25℃ COLLECTOR CURRENT IC(mA) 40 Ta=25℃ VCE=6V COMMON EMITTER TRANSFER COLLECTOR CURRENT IC(mA) 40 30 20 20 10 0 0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) 1 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE GAIN BAND WIDTH PRODUCT fT(MHz) 250 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25℃ VCE=6V 200 Ta=25℃ VCE=6V 100(@IC=1mA) 1000 150 100 100 10 50 1 0.1 1 10 100 1000 COLLECTOR CURRENT IC(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25℃ IE=0 f=1MHz 10 0 -0.1 -1 -10 EMITTER CURRENT IE(mA) -100 1 0.1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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