RT3J55M

RT3J55M Composite Transistor For high speed switching Silicon P-channel MOSFET DESCRIPTION RT3J55M is a composite transistor built with two INJ0011AX chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit：mm FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=-1.0～-2.0V ・Low on Resistance. RDS(on)=7.0Ω(TYP)＠ID=-100mA, VGS=-4.0V RDS(on)=4.8Ω(TYP)＠ID=-100mA, VGS=-10V ・High speed switching. ・Small package for easy mounting. 0.65 2.0 0.65 High speed switching , Analog switching ⑥ Tr.1 ⑤ 0～0.1 APPLICATION ④ Tr.2 TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 JEITA：SC-88 ① ② ③ MAXIMUM RATING (Ta=25℃) SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING －50 UNIT V V mA mW ℃ ℃ MARKING ⑥⑤④ Drain-source voltage Gate-source voltage Drain current Total power dissipation（Ta=25℃） Channel temperature Range of Storage temperature ±20 -100 150 ＋150 -55～＋150 .Ｊ ５５ Ｙ９７ C９９ ①②③ ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 RT3J55M Composite Transistor For high speed switching Silicon P-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time I D=-100μA, V V V V GS =0V -50 GS 145 7.0 4.8 25 6.0 35 90 ±10 -1.0 -2.0 - V μA μA V mS Ω pF pF ns GS=±20V, VDS=0V DS =-50V ,VGS=0V DS= V I D=-250μA, V DS -1.0 - | Yfs | RDS(on) Ciss Coss tON tOFF =-10V, I D=-100mA GS I D=-100mA, V I D=-100mA, V V V V DS =-4.0V GS=-10V =-10V, V GS =0V,f=1MHz DD=-5V , I D=-10mA GS=0～-5V Switching time test condition test circuit 0 IN OUT 0V RL -5V 10μs VDD=-5V D.U.≦1% Common source Ta=25℃ 50Ω VDD input waveform -5V VDS(ON） 10% 90% output waveform VDD ton 90% 10% tr toff tf ISAHAYA ELECTRONICS CORPORATION TYPICAL CHARACTERISTICS Ta=25℃ -100 -3.0V -2.9V ID -VDS -1 -2.7V Ta=25℃ -2.8V -1.7V IID -VDS(Low voltage region) -1.65V -80 Drain Current ID (mA) -2.6V -2.5V -0.8 Drain current ID (mA) -1.6V -60 -2.4V -2.3V VGS=-2.2V -2.1V -0.6 -40 -0.4 -1.55V -20 -2.0V -1.9V -1.7V -0.2 VGS=-1.5V -1.45V -0 -0 -5 Drain-Source voltage VDS (V) -0 -10 -0 -0.1 -0.2 -0.3 -0.4 Drain-Source voltage VDS (V) -1.4V -0.5 IDR -VDS -100 Drain Reverse current IDR (mA) Ta=25℃ VGS=0V Drain current ID (mA) -1000 Ta=25℃ VDS=-10V -100 ID -VGS -10 -10 -1 0 0.5 1 1.5 2 Drain-Source voltage VDS (V) -1 -0 -1 -2 -3 -4 -5 Gate-Source voltage VGS (V) |Yfs| - ID 1000 Drain-Source on-state resistance RDS(on) (Ω) Ta=25℃ VDS=-10V Forward transfer admittance |Yfs| (mS) 10 Ta=25℃ 8 6 4 2 0 1 -1 -10 -100 Drain current　ID (mA) -1000 -0 -50 RDS(ON) - ID VGS=-4V 100 -10V 10 -100 Drain current　ID (mA) -150 -200 t - ID 10000 Ta=25℃ toff C - VDS 100 Switching time t (ns) 1000 Ciss Capacitance C (pF) tf 10 Coss 100 ton 10 tr 1 Ta=25℃ VGS=0V 1 -0.1 -1 -10 -100 0.1 -0.1 -1 -10 Drain-Source voltage VDS (V) -100 Drain current ID (mA) ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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